MAGNONE, PAOLO
 Distribuzione geografica
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Continente #
NA - Nord America 6.198
EU - Europa 632
AS - Asia 297
AF - Africa 2
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 7.131
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Nazione #
US - Stati Uniti d'America 6.196
IT - Italia 362
CN - Cina 155
VN - Vietnam 137
FI - Finlandia 97
GB - Regno Unito 63
SE - Svezia 48
DE - Germania 30
IE - Irlanda 7
UA - Ucraina 7
NL - Olanda 4
FR - Francia 3
GR - Grecia 3
IN - India 3
BE - Belgio 2
CA - Canada 2
DZ - Algeria 2
JP - Giappone 2
AT - Austria 1
CZ - Repubblica Ceca 1
EE - Estonia 1
EU - Europa 1
LT - Lituania 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PL - Polonia 1
Totale 7.131
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Città #
Fairfield 1.404
Woodbridge 745
Houston 614
Cambridge 541
Ashburn 522
Seattle 472
Wilmington 407
Ann Arbor 352
Chandler 228
Padova 198
Dong Ket 136
San Diego 112
Medford 103
Princeton 103
Roxbury 77
Des Moines 75
Helsinki 46
Beijing 41
Boardman 36
Nanjing 34
Marostica 15
Cervia 14
Shenyang 14
London 13
Bologna 11
Lappeenranta 11
Napoli 11
Hebei 10
Tianjin 10
Kilburn 8
Nanchang 8
Bollate 7
Cadelbosco 7
Dublin 7
Indiana 7
New York 7
Brendola 6
Guangzhou 6
Kharkiv 6
Loano 6
Ningbo 6
Norwalk 6
Savignano Sul Rubicone 6
Jiaxing 5
Jinan 5
Zhengzhou 5
Bielefeld 4
Borås 4
Este 4
Gradara 4
Rockville 4
Belluno 3
Chicago 3
Milan 3
Phoenix 3
Prescot 3
Rende 3
Tappahannock 3
Albuquerque 2
Chiswick 2
Dongguan 2
Hounslow 2
Loubens-lauragais 2
Monza 2
Ogden 2
Pignone 2
Tokyo 2
Toronto 2
Wandsworth 2
Yellow Springs 2
Acton 1
Ahmedabad 1
Alfeld 1
Amsterdam 1
Antwerp 1
Atlanta 1
Auckland 1
Bangalore 1
Bengaluru 1
Brescia 1
Changsha 1
Falkenstein 1
Frankfurt am Main 1
Gdansk 1
Gunzenhausen 1
Haikou 1
Hanoi 1
Hefei 1
Kirkland 1
Las Vegas 1
Leawood 1
Los Angeles 1
Martellago 1
New Bedfont 1
Orange 1
Prague 1
Redmond 1
Rovigo 1
San Francisco 1
San Jose 1
Totale 6.558
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Nome #
Experimental technique for the performance evaluation and optimization of 1/f noise spectrum investigation in electron devices 190
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 183
Power-Based Droop Control in DC Microgrids Enabling Seamless Disconnection From Upstream Grids 164
Suppression of Second-Order Harmonic Current for Droop-Controlled Distributed Energy Resource Converters in DC Microgrids 164
Triple-Phase Shift Modulation for Dual Active Bridge based on Simplified Switching Loss Model 123
Plug and Play DC-DC Converters for Smart DC Nanogrids with Advanced Control Ancillary Services 113
Three-Phase Modular Multilevel Converter (MMC) for Low-voltage Applications: Improved Modulation Technique Toward Less Capacitance Requirement 108
Low frequency noise and gate bias instability in normally off AlGaN/GaN HEMTs 104
Analysis of an On-Line Stability Monitoring Approach for DC Microgrid Power Converters 99
Performance analysis of rear point contact solar cells by three-dimensional numerical simulation 95
Effect of Shunt Resistance on the Performance of mc-Silicon Solar Cells: A Combined Electro-Optical and Thermal Investigation 94
Understanding negative bias temperature stress in p-channel trench-gate power MOSFETs by low-frequency noise measurement 93
A Distributed Electrical Model for Interdigitated back Contact Silicon Solar Cells 92
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 91
Local Shunting in Multicrystalline Silicon Solar Cells: Distributed Electrical Simulations and Experiments 90
A Methodology to Account for the Finger Non-Uniformity in Photovoltaic Solar Cell 89
Impedance synthesis by inverter control for active loads in anti-islanding testbenches 88
Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices 85
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks 84
Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs 84
A Comparative Study of MWT Architectures by Means of Numerical Simulations 83
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations 82
Full Model and Characterization of Noise in Operational Amplifier 82
Numerical simulation and modeling of thermal transient in silicon power devices 81
High-mobility 0.85nm-EOT Si0.45Ge0.55-pFETs: Delivering high performance at scaled VDD 81
A methodology to account for the finger interruptions in solar cell performance 80
Simulation Study of Multi-wire front Contact Grids for Silicon Solar Cells 79
Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise 79
Understanding the basic advantages of bulk FinFETs for sub- and near-threshold logic circuits from device measurements 78
Performance of current mirror with high-k gate dielectrics 78
Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs 78
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT 77
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $Δ VTH and Underlying Degradation Mechanisms 77
FinFET Mismatch in Subthreshold Region: Theory and Experiments 77
Modeling the gate current 1/f noise and its application to advanced CMOS devices 77
INSTRUMENTATION DESIGN FOR CROSS-CORRELATION MEASUREMENTS BETWEEN GATE AND DRAIN LOW FREQUENCY NOISE IN MOSFETS 76
Implementation of an active RLC load for unintentional islanding test 75
Power-Based droop control suppressing the effect of bus voltage harmonics for DC microgrids 75
Simplified on-line monitoring system of MOSFET on-resistance based on a semi-empirical model 75
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 74
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 73
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 72
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs 71
On-line stability monitoring for power converters in DC microgrids 71
Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress 70
Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits 70
Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 70
Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell 69
Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures 69
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells 68
Numerical simulation and modeling of resistive and recombination losses in MWT solar cells 68
Power sharing analysis of power-based droop control for Dc microgrids considering cable impedances 67
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks 67
Loss analysis of silicon solar cells by means of numerical device simulation 66
Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs 65
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells 65
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence 65
Modeling of thermal network in silicon power MOSFETs 65
FinFET Mismatch in Subthreshold Region: Theory and Experiments 65
Impact of hot carriers on nMOSFET variability in 45- and 65-nm CMOS technologies 64
Matching Performance of FinFET Devices With Fin Widths Down to 10 nm 64
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique 64
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics 62
On the impact of defects close to the gate electrode on the low-frequency 1/f noise 62
The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks 62
Impact of AlN layer sandwiched between the GaN and the Al2O3layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs 61
Criticisms on and comparison of experimental channel backscattering extraction methods 61
Characterization and modeling of hot carrier-induced variability in subthreshold region 60
Experimental characterization of low-frequency noise in power MOSFETs for defectiveness modelling and technology assessment 60
Understanding the potential and the limits of Germanium pMOSFETs for VLSI circuits from experimental measurements 59
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 59
Power Electronics Based Active Load for Unintentional Islanding Testbenches 58
Numerical simulation and modeling of thermal transient in silicon power devices 58
Analysis of the impact of doping levels on performance of back contact - back junction solar cells 57
Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress 55
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling 55
Numerical simulation and modeling of rear point contact solar cells 55
A Distributed Electrical Network to Model the Local Shunting in Multicrystalline Silicon Solar Cells 54
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications 54
Open issues for the numerical simulation of silicon solar cells 54
“Limiting power cycling stress in power MOSFETs by active thermal control” 54
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation 54
Buried silicon-germanium pMOSFETs: Eanalysis in VLSI logic circuits under aggressive voltage scaling 53
Numerical Simulation on the Influence of Via and Rear Emitters in MWT Solar Cells 52
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms 52
TCAD numerical simulation of Metal Wrap Through solar cell2013 IEEE International Conference of Electron Devices and Solid-state Circuits 51
Understanding the impact of the doping profiles on selective emitter solar cell by two-dimensional numerical simulation 50
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks 50
Capacitance Requirements in Three-Phase MMCs for LV Systems: Review of Different Minimization Approaches 50
Understanding the Influence of Busbars in Large-Area IBC Solar Cells by Distributed SPICE Simulations 49
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 49
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 48
Negative bias temperature stress reliability in trench-gated P-channel power MOSFETs 40
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 38
Performance improvement of pulse width-amplitude modulation-based quasi-Z-source inverters: Analysis and implementation 36
Technical and Economical Assessment on Wire Soldered Cells Metallization 35
HEATING AND CAPACITIVE SENSING DEVICE FOR THE STEERING WHEEL OF A VEHICLE 32
Enhanced Level-Shifted Modulation for a Three-Phase Five-level Modified Modular Multilevel Converter (MMC) 29
Optimal Non-parametric Estimation of 1/f Noise Spectrum in Semiconductor Device 28
Modeling of Finger Interruptions in PV Solar Cells by Distributed Circuit Simulations 25
Totale 7.206
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Categoria #
all - tutte 24.614
article - articoli 15.914
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 199
selected - selezionate 0
volume - volumi 196
Totale 40.923
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019665 0 0 0 0 0 0 0 0 0 0 335 330
2019/20202.090 210 145 22 170 276 171 218 275 305 134 99 65
2020/20211.362 100 206 162 86 44 29 38 92 187 84 139 195
2021/20221.536 44 185 259 82 42 50 117 190 46 36 164 321
2022/2023670 154 1 0 64 145 65 3 66 102 10 46 14
2023/2024216 42 44 19 26 13 10 19 18 9 16 0 0
Totale 7.287