MA, TENG

MA, TENG  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments 2022 Bonaldo S.Ma T.Mattiazzo S.Paccagnella A.Gerardin S. + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Effetti da Radiazione Ionizzante a Dosi Ultra Alte in Tecnologie CMOS su Scala Nanometrica 2022 MA, TENG - - -
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs 2022 Ma, TBonaldo, SMattiazzo, SPaccagnella, AGerardin, S + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Influence of Fin- and Finger-Number on TID Degradation of 16 nm Bulk FinFETs Irradiated to Ultra-High Doses 2022 Ma T.Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation 2019 Ma T.Paccagnella A. + MICROELECTRONICS RELIABILITY - -
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses 2021 Ma T.Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 2022 Bonaldo S.Ma T.Mattiazzo S.Bagatin M.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -