MA, TENG
MA, TENG
Dipartimento di Ingegneria dell'Informazione - DEI
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
2022 Bonaldo, S.; Ma, T.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Fleetwood, D. M.; Paccagnella, A.; Gerardin, S.
Effetti da Radiazione Ionizzante a Dosi Ultra Alte in Tecnologie CMOS su Scala Nanometrica
2022 Ma, Teng
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
2022 Ma, T; Bonaldo, S; Mattiazzo, S; Baschirotto, A; Enz, C; Paccagnella, A; Gerardin, S
Influence of Fin- and Finger-Number on TID Degradation of 16 nm Bulk FinFETs Irradiated to Ultra-High Doses
2022 Ma, T.; Bonaldo, S.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Paccagnella, A.; Gerardin, S.
Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation
2019 Ma, T.; Yu, X.; Paccagnella, A.; Guo, Q.
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
2021 Ma, T.; Bonaldo, S.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Paccagnella, A.; Gerardin, S.
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses
2022 Bonaldo, S.; Gorchichko, M.; Zhang, E. X.; Ma, T.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Gerardin, S.; Schrimpf, R. D.; Reed, R. A.; Linten, D.; Mitard, J.; Fleetwood, D. M.