NAPOLITANI, ENRICO

NAPOLITANI, ENRICO  

Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA  

Mostra records
Risultati 1 - 20 di 205 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 1998 ROMANATO, FILIPPONAPOLITANI, ENRICODRIGO, ANTONIO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS - -
A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - 1998 International Conference on Ion Implantation Technology.
The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - 1998 International Conference on Ion Implantation Technology
Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF APPLIED PHYSICS - -
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures 1998 NAPOLITANI, ENRICOROMANATO, FILIPPODRIGO, ANTONIO + JOURNAL OF CRYSTAL GROWTH - -
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 1998 NAPOLITANI, ENRICOROMANATO, FILIPPODRIGO, ANTONIO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B - -
Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers 1999 ROMANATO, FILIPPONAPOLITANI, ENRICOCARNERA, ALBERTODRIGO, ANTONIO + JOURNAL OF APPLIED PHYSICS - -
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si/sup +/ and As/sup +/ ions 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions
Ultra-low energy boron implants in crystalline silicon: atomic transport properties and electrical activation 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Microscopical aspects of boron diffusion in ultralow energy implanted silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Clustering of ultra-low-energy implanted Boron in Silicon during postimplantation annealing 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 1999 NAPOLITANI, ENRICOROMANATO, FILIPPODRIGO, ANTONIO + JOURNAL OF APPLIED PHYSICS - -
Coherence length of strain relaxation mechanisms in InGaAs/GaAs[001] graded buffer layer 1999 ROMANATO, FILIPPONAPOLITANI, ENRICODE SALVADOR, DAVIDEDRIGO, ANTONIO + - - First International Workshop on Lattice Mismatched and Heterovalent Thin Film Epitaxy.
Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument 2000 NAPOLITANI, ENRICOCARNERA, ALBERTOSTORTI, RENZO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B - -
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 2000 BERTI, MARINANAPOLITANI, ENRICODRIGO, ANTONIO + APPLIED PHYSICS LETTERS - -
Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source 2000 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling 2000 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -