NAPOLITANI, ENRICO

NAPOLITANI, ENRICO  

Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA  

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Risultati 1 - 20 di 236 (tempo di esecuzione: 0.015 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications 2013 NAPOLITANI, ENRICOMASTROMATTEO, MASSIMODE SALVADOR, DAVIDE + ECS TRANSACTIONS - ECS Transactions
A critical evaluation of Ag- A nd Ti-hyperdoped Si for Si-based infrared light detection 2021 Napolitani E. + JOURNAL OF APPLIED PHYSICS - -
A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge 2014 SANSON, ANDREANAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF RAMAN SPECTROSCOPY - -
A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - 1998 International Conference on Ion Implantation Technology.
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling 2000 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Advanced Characterization Of Carrier Profiles In Germanium Using Micro-Machined Contact Probes 2012 NAPOLITANI, ENRICO + AIP CONFERENCE PROCEEDINGS - ION IMPLANTATION TECHNOLOGY 2012
Advanced Diffusion Strategies for Junction Formation in Germanium 2019 De Salvador, DavideSgarbossa, FrancescoMaggioni, GianluigiNapolitani, EnricoCarraro, ChiaraCarturan, Sara MariaRizzi, Gian AndreaCarnera, Alberto + PROCEEDINGS - Proceedings
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping 2012 NAPOLITANI, ENRICO + APPLIED PHYSICS EXPRESS - -
Anomalous transport of Sb in laser irradiated Ge 2012 NAPOLITANI, ENRICO + APPLIED PHYSICS LETTERS - -
Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting 2023 Carraro, ChiaraMaggioni, GianluigiDi Russo, EnricoDe Salvador, DavideNapolitani, Enrico + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Atomistic Mechanism of Boron Diffusion in Silicon 2006 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW LETTERS - -
Atomistic modeling of FnVm complexes in pre-amorphized Si 2008 NAPOLITANI, ENRICO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
B activation enhancement in submicron confined implants in Si 2005 Napolitani E. + APPLIED PHYSICS LETTERS - -
B clustering in amorphous Si 2008 DE SALVADOR, DAVIDEBISOGNIN, GABRIELEDI MARINO, MARCONAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B - -
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 2006 DI MARINO, MARCONAPOLITANI, ENRICOMASTROMATTEO, MASSIMOBISOGNIN, GABRIELEDE SALVADOR, DAVIDECARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
B-doping in Ge by excimer laser annealing 2013 NAPOLITANI, ENRICOMILAZZO, RUGGERO + JOURNAL OF APPLIED PHYSICS - -
Boron diffusion in extrinsically doped crystalline silicon 2010 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 2004 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 2000 BERTI, MARINANAPOLITANI, ENRICODRIGO, ANTONIO + APPLIED PHYSICS LETTERS - -