LEVADA, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 1.552
EU - Europa 125
AS - Asia 103
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.781
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Nazione #
US - Stati Uniti d'America 1.550
CN - Cina 56
FI - Finlandia 28
UA - Ucraina 28
DE - Germania 27
SG - Singapore 22
VN - Vietnam 13
SE - Svezia 12
IT - Italia 11
GB - Regno Unito 7
IN - India 6
FR - Francia 5
IE - Irlanda 5
JP - Giappone 3
TR - Turchia 3
CA - Canada 2
RU - Federazione Russa 2
EU - Europa 1
Totale 1.781
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Città #
Fairfield 219
Woodbridge 180
Houston 174
Ann Arbor 142
Jacksonville 137
Chandler 114
Wilmington 106
Ashburn 102
Seattle 87
Cambridge 78
Des Moines 32
Princeton 28
Beijing 20
Nanjing 19
Roxbury 19
Singapore 18
Dong Ket 13
Medford 13
Boardman 12
San Diego 12
Helsinki 8
Jiaxing 6
Pune 6
Dublin 5
London 4
Norwalk 4
Indiana 3
Kharkiv 3
Nanchang 3
Santa Clara 3
Tianjin 3
Tokyo 3
Yenibosna 3
Cagliari 2
Chicago 2
Mestre 2
Nürnberg 2
Padova 2
Tomsk 2
Foshan 1
Frankfurt am Main 1
Hangzhou 1
Hebei 1
Isola Della Scala 1
Las Vegas 1
Leawood 1
Los Angeles 1
Montreal 1
Ogden 1
Poughkeepsie 1
Redwood City 1
Rome 1
Sala Baganza 1
Shenyang 1
The Bronx 1
Totale 1.607
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Nome #
Failure modes and mechanisms of DC-aged GaN LEDs 154
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 154
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 139
Failure mechanisms of gallium nitride LEDs related with passivation 127
The role of Mg complexes in the degradation of InGaN-based LEDs 119
Reliability of visible GaN LEDs in plastic package 118
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress 115
Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels 110
Short-term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 95
Study of short-term instabilities in InGaN/GaN light-emitting diodes by means of capacitance voltage measurements and deep-level transient spectroscopy 79
Accelerated aging of GaN light emitting diodes studied by 1/f and RTS noise 77
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 70
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 69
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 65
Reliability of GaN-based LEDs 63
Reliability analysis of GaN-Based LEDs for solid state illumination 56
Characterization of power LEDs for general lighting application 55
Degradation effects in InGaN/GaN light emitting diodes 47
Luminescence properties of GaN LEDs after DC-aging 39
Reliability analysis of Gan-Based LEDs for solid state illumination 30
Totale 1.781
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Categoria #
all - tutte 5.663
article - articoli 2.231
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.894
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020470 0 0 7 169 46 40 28 56 47 31 28 18
2020/2021256 14 23 9 18 15 26 13 33 26 24 33 22
2021/2022213 5 39 18 16 4 9 10 20 8 5 34 45
2022/2023240 43 23 6 26 31 73 0 6 21 1 7 3
2023/202469 5 13 1 2 9 11 2 2 3 4 11 6
2024/202524 1 13 10 0 0 0 0 0 0 0 0 0
Totale 1.781