MARCUZZI, ALBERTO
 Distribuzione geografica
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Continente #
AS - Asia 476
EU - Europa 473
NA - Nord America 294
SA - Sud America 110
AF - Africa 91
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 8
Totale 1.463
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Nazione #
US - Stati Uniti d'America 229
IT - Italia 193
SG - Singapore 112
CN - Cina 94
BR - Brasile 73
HK - Hong Kong 53
DE - Germania 44
KR - Corea 34
PL - Polonia 34
GB - Regno Unito 28
VN - Vietnam 25
NL - Olanda 22
TW - Taiwan 22
IN - India 21
JP - Giappone 17
CH - Svizzera 15
FI - Finlandia 15
FR - Francia 11
AT - Austria 9
AR - Argentina 8
RO - Romania 8
RU - Federazione Russa 8
DO - Repubblica Dominicana 7
LU - Lussemburgo 7
TR - Turchia 7
BE - Belgio 6
HN - Honduras 6
MN - Mongolia 6
SK - Slovacchia (Repubblica Slovacca) 6
TH - Thailandia 6
XK - ???statistics.table.value.countryCode.XK??? 6
AF - Afghanistan, Repubblica islamica di 5
BS - Bahamas 5
BW - Botswana 5
BZ - Belize 5
CG - Congo 5
CL - Cile 5
ET - Etiopia 5
IE - Irlanda 5
IL - Israele 5
IQ - Iraq 5
JM - Giamaica 5
KG - Kirghizistan 5
MY - Malesia 5
SI - Slovenia 5
UA - Ucraina 5
ZA - Sudafrica 5
AE - Emirati Arabi Uniti 4
AL - Albania 4
BA - Bosnia-Erzegovina 4
BO - Bolivia 4
CI - Costa d'Avorio 4
CY - Cipro 4
EE - Estonia 4
EG - Egitto 4
GH - Ghana 4
GT - Guatemala 4
HT - Haiti 4
LC - Santa Lucia 4
MA - Marocco 4
ME - Montenegro 4
MR - Mauritania 4
MX - Messico 4
NI - Nicaragua 4
RW - Ruanda 4
UY - Uruguay 4
VC - Saint Vincent e Grenadine 4
VE - Venezuela 4
ZW - Zimbabwe 4
AD - Andorra 3
AM - Armenia 3
AO - Angola 3
AU - Australia 3
BY - Bielorussia 3
CO - Colombia 3
CV - Capo Verde 3
CZ - Repubblica Ceca 3
EC - Ecuador 3
ES - Italia 3
GN - Guinea 3
HU - Ungheria 3
IR - Iran 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
MG - Madagascar 3
MU - Mauritius 3
NC - Nuova Caledonia 3
PF - Polinesia Francese 3
PH - Filippine 3
PR - Porto Rico 3
PT - Portogallo 3
PY - Paraguay 3
SA - Arabia Saudita 3
SN - Senegal 3
TL - Timor Orientale 3
TT - Trinidad e Tobago 3
UZ - Uzbekistan 3
BD - Bangladesh 2
CU - Cuba 2
CW - ???statistics.table.value.countryCode.CW??? 2
Totale 1.390
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Città #
Singapore 77
Padova 47
Hong Kong 46
Santa Clara 45
Ashburn 41
Bytom 27
Milan 26
Munich 22
Beijing 21
Padua 19
Los Angeles 18
Riese Pio X 16
Hefei 15
Guangzhou 14
Boardman 13
Zurich 13
Ho Chi Minh City 12
Dongjak-gu 9
Bengaluru 8
Catania 7
Naples 7
São Paulo 7
Turku 7
Yongin-si 7
Frankfurt am Main 6
Hanoi 6
Nuremberg 6
Pristina 6
Redondo Beach 6
Rome 6
Ulan Bator 6
Yangmei District 6
Bishkek 5
Brazzaville 5
Lappeenranta 5
Nassau 5
Reggello 5
Sarcedo 5
Shanghai 5
Tappahannock 5
Warsaw 5
Abidjan 4
Accra 4
Atlanta 4
Azzano Decimo 4
Bangkok 4
Bologna 4
Bristol 4
Cambridge 4
Campinas 4
Castries 4
Harare 4
Kingstown 4
Managua 4
Modena 4
Montevideo 4
Nouakchott 4
Parma 4
Seoul 4
Taipei 4
Tokyo 4
Villeurbanne 4
Addis Ababa 3
Antananarivo 3
Baghdad 3
Brasília 3
Bratislava 3
Cairo 3
Casablanca 3
Chiswick 3
Conakry 3
Da Nang 3
Dakar 3
Dili 3
Dublin 3
Fossò 3
Gaborone 3
Guatemala City 3
Hsinchu 3
Johannesburg 3
Kigali 3
La Paz 3
Luanda 3
Melito di Napoli 3
Minsk 3
Montego Bay 3
Noumea 3
Podgorica 3
Port-au-Prince 3
Praia 3
Rio de Janeiro 3
Sala Baganza 3
San Pedro Sula 3
Santo Domingo 3
Stanford 3
Taichung 3
Tashkent 3
Tegucigalpa 3
Tirana 3
Vienna 3
Totale 815
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Nome #
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 180
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 131
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 119
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements 118
GaN Vertical Devices: challenges for high performance and stability 105
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 104
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress 97
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 97
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 94
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 75
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 71
Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 68
Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements 68
Threshold voltage variation of SiC trench MOSFETs during TDDB stress 66
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 58
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress 38
Totale 1.489
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Categoria #
all - tutte 4.170
article - articoli 1.485
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.655
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/20232 0 0 0 0 0 0 0 0 1 0 1 0
2023/2024210 0 7 34 52 7 16 25 12 17 5 19 16
2024/2025557 10 40 23 53 54 50 34 35 22 28 87 121
2025/2026720 129 133 264 194 0 0 0 0 0 0 0 0
Totale 1.489