In this paper we show an extensive overview of degradation modes and mechanisms observed in GaN-based HEMT. Extensive testing of various GaN-based HEMTs technologies has demonstrated that the increase of the density of deep levels is the dominant failure mechanism of AlGaN/GaN HEMTs. At higher drain voltages, more complex mechanisms play a role, involving inverse piezoelectric effects and localized hot carrier injection from the gate, thus enhancing degradation effects.

Degradation of GaN HEMT at high drain voltages

MENEGHESSO, GAUDENZIO;DANESIN, FRANCESCA;MENEGHINI, MATTEO;RAMPAZZO, FABIANA;TAZZOLI, AUGUSTO;ZANON, FRANCO;ZANONI, ENRICO
2007

Abstract

In this paper we show an extensive overview of degradation modes and mechanisms observed in GaN-based HEMT. Extensive testing of various GaN-based HEMTs technologies has demonstrated that the increase of the density of deep levels is the dominant failure mechanism of AlGaN/GaN HEMTs. At higher drain voltages, more complex mechanisms play a role, involving inverse piezoelectric effects and localized hot carrier injection from the gate, thus enhancing degradation effects.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2439487
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