Padua Research Archive, l’archivio istituzionale della produzione scientifica dell’Università degli Studi di Padova, ha lo scopo di raccogliere, documentare, conservare e pubblicare, anche ad accesso aperto, i prodotti della ricerca dell’Ateneo. Padua Research Archive utilizza la piattaforma IRIS (Institutional Research Information System) sviluppata da Cineca.
EnglishThis paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of gate leakage current. All these results are very encouraging and confirm that the composite substrates are very promising for low-cost and high performance AlGaN/GaN HEMT for RF power applications.
| Titolo: | Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test |
| Autori: | |
| Data di pubblicazione: | 2009 |
| Rivista: | |
| Abstract: | This paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of gate leakage current. All these results are very encouraging and confirm that the composite substrates are very promising for low-cost and high performance AlGaN/GaN HEMT for RF power applications. |
| Handle: | http://hdl.handle.net/11577/2440606 |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11577/2440606
Copyright © 2019