Most dangerous failure mechanisms of GaN HEMTs appear to involve trap generation, either due to hot electron degradation, reverse piezoelectric effects, or localized damage due to trap-asssisted current injection. Specific diagnostic techniques may assist reliability studies providing useful hints for device and material optimization
Failure mechanisms of GaN-based transistors in on- and off-state
ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;DANESIN, FRANCESCA;MENEGHINI, MATTEO;RAMPAZZO, FABIANA;TAZZOLI, AUGUSTO;ZANON, FRANCO
2008
Abstract
Most dangerous failure mechanisms of GaN HEMTs appear to involve trap generation, either due to hot electron degradation, reverse piezoelectric effects, or localized damage due to trap-asssisted current injection. Specific diagnostic techniques may assist reliability studies providing useful hints for device and material optimizationFile in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
