Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stocco, Antonio; Cester, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Chini, A.; Pantellini, A.; Lanzieri, C.

doi:10.1109/IRPS.2014.6861113

The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the increase in current collapse detected after reverse-bias stress. The study was carried out on GaN-based HEMTs with increasing levels of iron doping in the buffer, which were submitted to drain current transient measurements and reversebias stress. Results demonstrate that the use of Fe-doping may significantly impact on current collapse; moreover, we demonstrate that the increase in current collapse detected after reverse-bias stress is not due to the generation of new types of defect, but to the increase in the signal of the defects which were already present before stress.

Titolo:	Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs
Autori:	MENEGHINI, MATTEO ROSSETTO, ISABELLA BISI, DAVIDE STOCCO, ANTONIO CESTER, ANDREA MENEGHESSO, GAUDENZIO ZANONI, ENRICO A. Chini A. Pantellini C. Lanzieri mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2014
Abstract:	The aim of this work is to quantitatively investigate the influence of buffer doping on the current collapse of AlGaN/GaN HEMTs, and to analyze the contribution of trap states to the increase in current collapse detected after reverse-bias stress. The study was carried out on GaN-based HEMTs with increasing levels of iron doping in the buffer, which were submitted to drain current transient measurements and reversebias stress. Results demonstrate that the use of Fe-doping may significantly impact on current collapse; moreover, we demonstrate that the increase in current collapse detected after reverse-bias stress is not due to the generation of new types of defect, but to the increase in the signal of the defects which were already present before stress.
Handle:	http://hdl.handle.net/11577/3065524
Appare nelle tipologie:	04.01 - Contributo in atti di convegno

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