We demonstrate the avalanche capability and the existence of breakdown walkout in GaN-on-GaN vertical devices with polarization doping. By means of combined electrical and optical characterization, we demonstrate the following original results: 1) vertical p-n junctions with polarization doping have avalanche capability; 2) stress in avalanche regime induces an increase in breakdown voltage, referred to as breakdown walkout; 3) this process is fully-recoverable, thus being related to a trapping mechanism; 4) temperature-dependent measurements of the breakdown walkout identify CN defects responsible for this process; and 5) capacitance deep level transient spectroscopy (C-DLTS) and deep level optical spectroscopy (DLOS) confirm the presence of residual carbon in the devices under test. A possible model to explain the avalanche walkout is then proposed.

Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

Fabris E.;Meneghesso G.;Zanoni E.;Meneghini M.;De Santi C.;Caria A.;
2019

Abstract

We demonstrate the avalanche capability and the existence of breakdown walkout in GaN-on-GaN vertical devices with polarization doping. By means of combined electrical and optical characterization, we demonstrate the following original results: 1) vertical p-n junctions with polarization doping have avalanche capability; 2) stress in avalanche regime induces an increase in breakdown voltage, referred to as breakdown walkout; 3) this process is fully-recoverable, thus being related to a trapping mechanism; 4) temperature-dependent measurements of the breakdown walkout identify CN defects responsible for this process; and 5) capacitance deep level transient spectroscopy (C-DLTS) and deep level optical spectroscopy (DLOS) confirm the presence of residual carbon in the devices under test. A possible model to explain the avalanche walkout is then proposed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3329667
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