FABRIS, ELENA

FABRIS, ELENA  

Università di Padova  

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Risultati 1 - 20 di 20 (tempo di esecuzione: 0.036 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Degradation of GaN-on-GaN vertical diodes submitted to high current stress 2018 Fabris, E.Meneghini, M.De Santi, C.Hu, Z.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Avalanche capability and recoverable breakdown walkout in polarization-doped vertical GaN pn diodes 2019 E. FabrisC. De SantiA. CariaG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 2019 E. FabrisM. MeneghiniC. De SantiM. BorgaG. MeneghessoE. Zanoni + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 2019 FABRIS, ELENAMeneghini, MatteoDe Santi, CarloBorga, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 2019 Fabris E.Meneghini M.De Santi C.Borga M.Meneghesso G.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 2019 De Santi, C.Fabris, E.Meneghesso, G.Meneghini, M.Zanoni, E. + - TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING Technical Digest - International Electron Devices Meeting, IEDM
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 2019 Stoffels S.SANGIORGI, ENRICOBorga M.Fabris E.Meneghini M.Zanoni E.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 2019 Fabris E.Meneghesso G.Zanoni E.Meneghini M.De Santi C.Caria A. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation Mechanisms of GaN-Based Vertical Devices: A Review 2020 Meneghini M.Fabris E.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
GaN Vertical p-i-n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation 2020 De Santi C.Fabris E.Meneghesso G.Zanoni E.Meneghini M. IEEE ELECTRON DEVICE LETTERS - -
Trapping and Detrapping Mechanisms in β-GaO Vertical FinFETs Investigated by Electro-Optical Measurements 2020 Fabris E.De Santi C.Caria A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 2020 Fabris, ElenaDe Santi, CarloCaria, AlessandroMukherjee, KalparupaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 2021 De Santi C.Fabris E.Caria A.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering