CARIA, ALESSANDRO

CARIA, ALESSANDRO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 26 (tempo di esecuzione: 0.032 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities 2017 C. De SantiM. MeneghiniA. CariaG. MeneghessoE. Zanoni + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Degradation of InGaN-based solar cells under monochromatic photoexcitation 2017 C. De SantiM. MeneghiniA. CariaG. MeneghessoE. Zanoni + - - Proceedings of the Compound Semiconductor Week 2017
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation 2017 De Santi, C.Meneghini, M.CARIA, ALESSANDROZanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the GaN Marathon 2.0
Degradation processes and origin in InGaN-based high-power photodetectors 2018 De Santi, CarloMeneghini, M.CARIA, ALESSANDROMEDJDOUB, FARIDZanoni, E.Meneghesso, G. + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 2018 C. De SantiM. MeneghiniCARIA, ALESSANDRON. RensoMEDJDOUB, FARIDE. ZanoniG. Meneghesso + - - Proceedings of the Compound Semiconductor Week 2018
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Evidence of optically induced degradation in gallium nitride optoelectronic devices 2018 De Santi, CarloCaria, AlessandroRenso, NicolaMedjdoub, FaridMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS EXPRESS - -
GaN-based laser wireless power transfer system 2018 De Santi, CarloMeneghini, MatteoCARIA, ALESSANDROKalinic, BorisCesca, TizianaMeneghesso, GaudenzioZanoni, Enrico + MATERIALS - -
Challenges for highly reliable GaN-based LEDs 2019 Zanoni E.De Santi C.Trivellin N.Renso N.Buffolo M.Monti D.Caria A.Piva F.Meneghesso G.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Avalanche capability and recoverable breakdown walkout in polarization-doped vertical GaN pn diodes 2019 E. FabrisC. De SantiA. CariaG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Photon-driven degradation processes in GaN-based optoelectronic devices 2019 C. De SantiA. CariaN. RensoF. MedjdoubG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 2019 Fabris E.Meneghesso G.Zanoni E.Meneghini M.De Santi C.Caria A. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 2020 Caria A.Renso N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition 2020 Caria A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 2020 Renso, NDe Santi, CCaria, AMeneghesso, GZanoni, EMeneghini, M + JOURNAL OF APPLIED PHYSICS - -
Excitation intensity and temperature-dependent performance of ingan/gan multiple quantum wells photodetectors 2020 Caria A.De Santi C.Zanoni E.Meneghesso G.Meneghini M. + ELECTRONICS - -
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 2020 Fabris, ElenaDe Santi, CarloCaria, AlessandroMukherjee, KalparupaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress 2020 Caria A.De Santi C.Zamperetti F.Zhao Y.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Trapping and Detrapping Mechanisms in β-GaO Vertical FinFETs Investigated by Electro-Optical Measurements 2020 Fabris E.De Santi C.Caria A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -