CARIA, ALESSANDRO

CARIA, ALESSANDRO  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 20 di 40 (tempo di esecuzione: 0.029 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities 2017 C. De SantiM. MeneghiniA. CariaG. MeneghessoE. Zanoni + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Degradation of InGaN-based solar cells under monochromatic photoexcitation 2017 C. De SantiM. MeneghiniA. CariaG. MeneghessoE. Zanoni + - - Proceedings of the Compound Semiconductor Week 2017
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation 2017 De Santi, C.Meneghini, M.CARIA, ALESSANDROZanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Degradation processes and origin in InGaN-based high-power photodetectors 2018 De Santi, CarloMeneghini, M.CARIA, ALESSANDROMEDJDOUB, FARIDZanoni, E.Meneghesso, G. + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 2018 C. De SantiM. MeneghiniCARIA, ALESSANDRON. RensoMEDJDOUB, FARIDE. ZanoniG. Meneghesso + - - Proceedings of the Compound Semiconductor Week 2018
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the GaN Marathon 2.0
GaN-based laser wireless power transfer system 2018 De Santi, CarloMeneghini, MatteoCARIA, ALESSANDROKalinic, BorisCesca, TizianaMeneghesso, GaudenzioZanoni, Enrico + MATERIALS - -
Evidence of optically induced degradation in gallium nitride optoelectronic devices 2018 De Santi, CarloCaria, AlessandroRenso, NicolaMedjdoub, FaridMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS EXPRESS - -
Challenges for highly reliable GaN-based LEDs 2019 Zanoni E.De Santi C.Trivellin N.Renso N.Buffolo M.Monti D.Caria A.Piva F.Meneghesso G.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Photon-driven degradation processes in GaN-based optoelectronic devices 2019 C. De SantiA. CariaN. RensoF. MedjdoubG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Avalanche capability and recoverable breakdown walkout in polarization-doped vertical GaN pn diodes 2019 E. FabrisC. De SantiA. CariaG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 2019 Fabris E.Meneghesso G.Zanoni E.Meneghini M.De Santi C.Caria A. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress 2020 Caria A.De Santi C.Zamperetti F.Zhao Y.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 2020 Fabris, ElenaDe Santi, CarloCaria, AlessandroMukherjee, KalparupaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition 2020 Caria A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 2020 Renso, NDe Santi, CCaria, AMeneghesso, GZanoni, EMeneghini, M + JOURNAL OF APPLIED PHYSICS - -
Trapping and Detrapping Mechanisms in β-GaO Vertical FinFETs Investigated by Electro-Optical Measurements 2020 Fabris E.De Santi C.Caria A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Excitation intensity and temperature-dependent performance of ingan/gan multiple quantum wells photodetectors 2020 Caria A.De Santi C.Zanoni E.Meneghesso G.Meneghini M. + ELECTRONICS - -
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 2020 Caria A.Renso N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering