The aim of this work is to study the degradation processes in high power InGaN semiconductor lasers, by means of electrical, optical, spectral and capacitance deep-level transient spectroscopy measurements. The devices were submitted to two different stress experiments, (i) a constant current stress at 1.5 A and 45 °C, and (ii) a temperature/bias step stress at 1 A and increasing temperature. Results demonstrated: (i) two different mechanisms that change the drive voltage, one due to the activation of Mg and one ascribed to the generation of point defects; (ii) a parasitic peak is present in the emission spectra, ascribed to the recombination in a second quantum well (QW); (iii) redistribution of charge takes place during the temperature step stress.

Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements

Piva F.;De Santi C.;Buffolo M.;Meneghesso G.;Zanoni E.;Meneghini M.
2020

Abstract

The aim of this work is to study the degradation processes in high power InGaN semiconductor lasers, by means of electrical, optical, spectral and capacitance deep-level transient spectroscopy measurements. The devices were submitted to two different stress experiments, (i) a constant current stress at 1.5 A and 45 °C, and (ii) a temperature/bias step stress at 1 A and increasing temperature. Results demonstrated: (i) two different mechanisms that change the drive voltage, one due to the activation of Mg and one ascribed to the generation of point defects; (ii) a parasitic peak is present in the emission spectra, ascribed to the recombination in a second quantum well (QW); (iii) redistribution of charge takes place during the temperature step stress.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3365222
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