PIVA, FRANCESCO

PIVA, FRANCESCO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 46 (tempo di esecuzione: 0.038 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 2022 F. PivaN. RoccatoM. BuffoloC. De SantiM. PilatiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode 2023 Casu, C.Buffolo, M.Caria, A.Piva, F.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. MICROELECTRONICS RELIABILITY - -
Challenges for highly reliable GaN-based LEDs 2019 Zanoni E.De Santi C.Trivellin N.Renso N.Buffolo M.Monti D.Caria A.Piva F.Meneghesso G.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Characterization and C-DLTS analysis of antimony selenide solar cells 2023 Jessica Jazmine Nicole BarrantesCarlo De SantiFrancesco PivaMatteo BuffoloAlessandro CariaNicola TrivellinGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of Prima conferenza nazionale della Rete Italiana Fotovoltaico per la ricerca e l'innovazione (rete IFV)
Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations 2021 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE - The International Society for Optical Engineering Volume 11686
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 2022 Roccato, NPiva, FDe Santi, CBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy 2021 Piva F.De Santi C.Caria A.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 2022 Buffolo M.Caria A.Piva F.Roccato N.Casu C.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 2022 Buffolo, MRoccato, NPiva, FDe Santi, CCasu, CCaria, AMukherjee, KMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements 2020 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Degradation mechanisms of 1.6 W blue semiconductor lasers: Effect on subthreshold optical power and power spectral density 2020 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs 2021 De Santi C.Caria A.Piva F.Meneghesso G.Zanoni E.Meneghini M. - - Reliability of Semiconductor Lasers and Optoelectronic Devices
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy 2023 Piva F.Buffolo M.De Santi C.Pilati M.Roccato N.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE Photonics West 2023 conference
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 2023 Piva F.Pilati M.Buffolo M.Roccato N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence 2019 Trivellin N.Monti D.Piva F.Buffolo M.De Santi C.Zanoni E.Meneghesso G.Meneghini M. JAPANESE JOURNAL OF APPLIED PHYSICS - -
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current 2022 M. BuffoloN. RoccatoF. PivaC. De SantiN. GrandjeanG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of E-MRS fall 2022
DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress 2022 F. PivaM. BuffoloC. De SantiN. RoccatoG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of E-MRS fall 2022
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 2021 Roccato N.Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes 2019 Monti D.De Santi C.DA RUOS, SARAPIVA, FRANCESCOMeneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile 2021 Piva F.De Santi C.Caria A.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering