GAO, ZHAN

GAO, ZHAN  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 8 di 8 (tempo di esecuzione: 0.016 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 2019 Gao Z.Meneghini M.Rampazzo F.Rzin M.De Santi C.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 2019 Mukherjee K.De Santi C.Rzin M.Gao Z.Meneghesso G.Meneghini M.Zanoni E. MICROELECTRONICS RELIABILITY - -
Harmonic generation in metal-insulator and metal-insulator-metal nanostructures 2019 Gao Z.De Ceglia D. + JOURNAL OF APPLIED PHYSICS - -
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 2020 Gao Z.Rampazzo F.Meneghini M.De Santi C.Chiocchetta F.Marcon D.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 2020 Gao Z.Meneghini M.Chiocchetta F.Rampazzo F.De Santi C.Meneghesso G.Zanoni E. + - - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -