CANDELORI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 3.908
EU - Europa 383
AS - Asia 256
Continente sconosciuto - Info sul continente non disponibili 3
SA - Sud America 2
OC - Oceania 1
Totale 4.553
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Nazione #
US - Stati Uniti d'America 3.904
CN - Cina 183
FI - Finlandia 93
SE - Svezia 92
DE - Germania 56
UA - Ucraina 51
IT - Italia 48
VN - Vietnam 37
GB - Regno Unito 31
IN - India 15
TR - Turchia 14
IE - Irlanda 5
CA - Canada 4
EU - Europa 3
BR - Brasile 2
FR - Francia 2
JP - Giappone 2
MY - Malesia 2
NL - Olanda 2
AT - Austria 1
AU - Australia 1
DK - Danimarca 1
ES - Italia 1
HK - Hong Kong 1
IR - Iran 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 4.553
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Città #
Fairfield 740
Woodbridge 373
Chandler 365
Ashburn 296
Houston 292
Seattle 266
Wilmington 258
Ann Arbor 244
Cambridge 221
Jacksonville 187
Princeton 107
Beijing 69
San Diego 62
Des Moines 49
Roxbury 48
Nanjing 40
Boardman 39
Medford 38
Dong Ket 37
Helsinki 32
Munich 21
Yenibosna 14
Shenyang 13
Hebei 12
Nanchang 11
Venice 11
Indiana 10
London 9
Changsha 8
Norwalk 8
Tianjin 8
Jinan 6
Kharkiv 6
Mestre 6
Redmond 6
Dublin 5
Jiaxing 5
Falls Church 4
Guangzhou 4
Kilburn 4
Los Angeles 4
Borås 3
Avezzano 2
Dalmine 2
Edinburgh 2
Elk Grove Village 2
Frankfurt am Main 2
Groningen 2
Kuala Lumpur 2
Leawood 2
Milan 2
New York 2
Ningbo 2
Padova 2
Redwood City 2
Rockville 2
Rome 2
San Francisco 2
São Paulo 2
Tappahannock 2
Turin 2
Yellow Springs 2
Acton 1
Ardabil 1
Auburn Hills 1
Bagnaria Arsa 1
Boston 1
Central 1
Chiswick 1
Copenhagen 1
Delhi 1
Hounslow 1
Lanzhou 1
Manchester 1
Montreal 1
Ogden 1
Paris 1
Pisa 1
Ravenna 1
Reston 1
Sydney 1
Taizhou 1
Tokyo 1
Valencia 1
Vancouver 1
Verbania 1
Vienna 1
Vientiane 1
Wandsworth 1
Zhengzhou 1
Totale 4.009
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Nome #
The SIRAD irradiation facility for radiation damage studies induced by high-energy ions 109
The SIRAD irradiation facility at LNL 107
Degradation of electron irradiated MOS capacitors 104
Lithium ion irradiation of standard and oxygenated silicon diodes 103
Proton irradiation effects on standard and oxygenated silicon diodes 103
Low- and High-energy proton irradiations of standard and oxygenated silicon diodes 102
Irradiation effects on thin epitaxial silicon detectors. 101
Ion electron emission microscopy at SIRAD 101
New evidence of dominant processing effects in standard and oxygenated silicon diodes after neutron irradiation 98
Heavy-Ions induced SEE effects measurements for the STRURED ASIC 98
Lithium ion-induced damage in silicon detectors 93
A new irradiation facility for neutron-induced Single Event Effect studies at LNL 92
SPICE evaluation of the S/N ratio for Si microstrip detectors 88
Neutron production targets for a new Single Event Effects facility at the 70 MeV Cyclotron of LNL-INFN 87
A SPICE model of the ohmic side of double-sided Si microstrip detectors 85
A SPICE model for Si microstrip detectors and read-out electronics 85
Radiation tests of single photon avalanche diode for space applications 85
The effect of highly ionising particles on the CMS silicon strip tracker 84
Single-event upset tests on the readout electronics for the pixel detectors of the PANDA experiment 84
The silicon microstrip tracker for CMS 83
Breakdown properties of irradiated MOS capacitors 83
The CMS silicon microstrip detectors: research and development 82
Radiation hardness of silicon detectors for high-energy physics applications 82
Radiation testing of GLAST LAT tracker ASICs 82
Development of radiation tolerant semiconductor detectors for the Super-LHC 79
Defect characterization in silicon particle detectors irradiated with Li ions 77
Radiation hardness of semiconductor detectors for high energy physics applications 77
Test results of heavily irradiated Si detectors 77
Radiation defects in neutron irradiated silicon with high oxygen concentration 76
MOSFET parameter degradation after Fowler–Nordheim injection stress 76
Radiation induced bulk damage in silicon diodes with pions and protons 75
Lithium ion irradiation effects on epitaxial silicon detectors 75
Neutron irradiation effects on standard and oxygenated silicon diodes 75
High-voltage operation of silicon devices for LHC experiments 73
HSPICE simulations of Si microstrip detectors 71
CMS silicon tracker developments 71
Charge collection efficiency of standard and oxygenated silicon microstrip detectors 70
Silicon diode radiation hardening for high energy physics detectors 69
Latest results of SEE measurements obtained by the STRURED demonstrator ASIC 69
Radiation hardness of silicon detectors based on pre-irradiated silicon 69
Study of Single Event transients on the VELA ASIC, x-ray detectors FEE for new generation astronomical instruments 67
Status of the ion electron emission microscope at the SIRAD single event facility 66
PRODUCTION TESTING AND QUALITY ASSURANCE OF CMS SILICON MICROSTRIP TRACKER READOUT CHIPS 65
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC 62
Radiation hardness assurance of the CLARO8 front-end chip for the LHCb RICH detector upgrade 62
A fast and radiation-hard single-photon counting ASIC for the upgrade of the LHCb RICH detector at CERN 62
Radiation effects on breakdown characteristics of multiguarded devices 60
Spice Analysis of Signal Propagation In Si Microstrip Detectors 59
The R&D program for silicon detectors in CMS 55
Silicon detectors for the sLHC 54
Radiation-hard semiconductor detectors for SuperLHC 53
Radiation Hardness of the CLARO8 ASIC: a Fast Single-Photon Counting Chip for the LHCb Experiment at CERN 50
Bulk radiation damage induced in thin epitaxial silicon detectors by 24 GeV protons 49
Improvement in breakdown characteristics with multiguard structures in microstrip detectors for CMS 47
SPICE evaluation of the S/N ratio for Si microstrip detectors 47
R&D for the CMS silicon tracker 42
The silicon microstrip tracker for CMS 42
The CMS silicon tracker 41
The CMS silicon strip tracker 40
High-voltage breakdown studies on Si microstrip detectors 38
Comparative study of < 111 > and < 100 > crystals and capacitance measurements on Si strip detectors in CMS 32
Breakdown of coupling dielectrics for Si microstrip detectors 27
Status and prospects of the SIRAD irradiation facility for radiation effects studies at LNL2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 25
Total dose irradiation of a 0.25 micron process 21
Totale 4.566
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Categoria #
all - tutte 15.938
article - articoli 13.814
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.752
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019419 0 0 0 0 0 0 0 0 0 0 225 194
2019/20201.138 158 38 13 81 131 94 112 129 139 117 84 42
2020/2021655 34 42 12 57 26 100 11 67 120 42 72 72
2021/2022890 29 49 190 41 69 44 29 97 41 24 93 184
2022/2023728 138 94 24 88 134 85 0 45 71 2 41 6
2023/2024112 12 30 18 24 7 4 7 3 2 5 0 0
Totale 4.566