BISOGNIN, GABRIELE
 Distribuzione geografica
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Continente #
NA - Nord America 5.583
AS - Asia 2.588
EU - Europa 1.005
SA - Sud America 534
AF - Africa 422
OC - Oceania 43
Continente sconosciuto - Info sul continente non disponibili 38
Totale 10.213
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Nazione #
US - Stati Uniti d'America 5.328
SG - Singapore 842
CN - Cina 518
BR - Brasile 344
HK - Hong Kong 289
VN - Vietnam 256
IT - Italia 167
BD - Bangladesh 110
FI - Finlandia 110
DE - Germania 86
FR - Francia 86
IN - India 83
UA - Ucraina 70
GB - Regno Unito 49
SE - Svezia 45
IQ - Iraq 41
RU - Federazione Russa 40
TR - Turchia 35
AR - Argentina 34
CA - Canada 29
PH - Filippine 27
CO - Colombia 25
EC - Ecuador 25
JP - Giappone 24
ZA - Sudafrica 24
ID - Indonesia 22
SA - Arabia Saudita 22
VE - Venezuela 22
ES - Italia 21
KR - Corea 21
PL - Polonia 21
UY - Uruguay 21
AZ - Azerbaigian 20
JM - Giamaica 20
PK - Pakistan 20
PY - Paraguay 20
MX - Messico 19
MY - Malesia 19
KZ - Kazakistan 18
MA - Marocco 18
NL - Olanda 18
PS - Palestinian Territory 18
CV - Capo Verde 17
IE - Irlanda 17
NI - Nicaragua 16
UZ - Uzbekistan 16
AE - Emirati Arabi Uniti 15
BB - Barbados 15
MK - Macedonia 15
MZ - Mozambico 15
TN - Tunisia 15
AL - Albania 14
CD - Congo 14
CR - Costa Rica 14
CW - ???statistics.table.value.countryCode.CW??? 14
IL - Israele 14
KE - Kenya 14
LY - Libia 14
MU - Mauritius 14
PE - Perù 14
PT - Portogallo 14
RS - Serbia 14
BJ - Benin 13
BS - Bahamas 13
BY - Bielorussia 13
CH - Svizzera 13
GR - Grecia 13
JO - Giordania 13
TH - Thailandia 13
ZM - Zambia 13
AO - Angola 12
BW - Botswana 12
CZ - Repubblica Ceca 12
DO - Repubblica Dominicana 12
ET - Etiopia 12
GT - Guatemala 12
HN - Honduras 12
RE - Reunion 12
ZW - Zimbabwe 12
BG - Bulgaria 11
CI - Costa d'Avorio 11
CL - Cile 11
EG - Egitto 11
KH - Cambogia 11
LB - Libano 11
LU - Lussemburgo 11
PA - Panama 11
RO - Romania 11
TT - Trinidad e Tobago 11
TW - Taiwan 11
VC - Saint Vincent e Grenadine 11
XK - ???statistics.table.value.countryCode.XK??? 11
BA - Bosnia-Erzegovina 10
BE - Belgio 10
BZ - Belize 10
CY - Cipro 10
DJ - Gibuti 10
DK - Danimarca 10
HR - Croazia 10
LC - Santa Lucia 10
Totale 9.757
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Città #
Fairfield 668
Ashburn 652
San Jose 540
Singapore 538
Woodbridge 446
Houston 318
Jacksonville 299
Seattle 285
Hong Kong 248
Wilmington 245
Cambridge 232
Ann Arbor 194
Chandler 149
Beijing 115
Council Bluffs 100
Princeton 99
Santa Clara 89
Boardman 84
Ho Chi Minh City 81
Los Angeles 74
San Diego 71
Hanoi 58
Lauterbourg 47
Helsinki 44
Nanjing 41
Milan 37
Buffalo 29
New York 27
Munich 26
Chicago 23
Guangzhou 22
São Paulo 22
Baku 19
Rome 18
Orem 17
Managua 16
Montevideo 16
Bridgetown 15
Dublin 14
San Francisco 14
Amman 13
Kingston 13
Nanchang 13
Brasília 12
Brooklyn 12
Cotonou 12
Dallas 12
Haiphong 12
Johannesburg 12
Kinshasa 12
Maputo 12
Nairobi 12
Nassau 12
Norwalk 12
Praia 12
Redondo Beach 12
Tashkent 12
Tianjin 12
Tokyo 12
Abidjan 11
Baghdad 11
Harare 11
Jiaxing 11
Kingstown 11
Lusaka 11
Panama City 11
Phnom Penh 11
Willemstad 11
Belo Horizonte 10
Castries 10
Dar es Salaam 10
Kuala Lumpur 10
Lima 10
London 10
Luanda 10
Quito 10
San José 10
Shenyang 10
Tirana 10
Tripoli 10
Accra 9
Addis Ababa 9
Andorra la Vella 9
Biên Hòa 9
Bytom 9
Da Nang 9
Des Moines 9
Medford 9
Minsk 9
Montreal 9
Niamey 9
Noumea 9
Roxbury 9
Turku 9
Ulan Bator 9
Ankara 8
Asunción 8
Belgrade 8
Conakry 8
Dakar 8
Totale 6.657
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Nome #
B clustering in amorphous Si 279
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 266
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 262
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 241
Boron diffusion in extrinsically doped crystalline silicon 241
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 237
Hydrogen diffusion in GaAs1-xNx 236
Formation and dissolution of D-N complexes in dilute nitrides 236
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 230
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 222
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 221
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 218
Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation 215
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 210
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 210
Dissolution kinetics of B clusters in crystalline Si 209
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si 205
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 202
Atomistic Mechanism of Boron Diffusion in Silicon 201
Evidence for a new hydrogen complex in dilute nitride alloys 195
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 195
Iso-concentration study of atomistic mechanism of B diffusion in Si 194
Nitrogen-induced hindering of In incorporation in InGaAsN 194
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 194
Substitutional B in Si: Accurate lattice parameter determination 192
Effect of strain on the carrier mobility in heavily doped p-type Si 191
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures 188
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 188
High-level incorporation of antimony in germanium by laser annealing 188
Ion beam characterization of Fe implanted GaN 184
Local structure of nitrogen-hydrogen complexes in dilute nitrides 183
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 183
Substitutional and clustered B in ion implanted Ge: Strain determination 180
Localization of He induced nanovoids in buried Si1-xGex thin films 180
Role of ion mass on damage accumulation during ion implantation in Ge 178
Lattice strain induced by boron clusters in crystalline silicon 178
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 176
Carrier mobility and strain effect in heavily doped p-type Si 175
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 174
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs_{1−y}N_{y} alloys: Role of N-H_{n} centers with n>2 and their thermal stability 171
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 170
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 170
High resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 165
Recent Insights in the Diffusion of Boron in Silicon and Germanium 161
On the Strain Induced by Arsenic into Silicon 157
Implantation and activation of high concentrations of Boron in Germanium 156
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 156
Lattice strain and composition of boron-interstitial clusters in crystalline silicon 153
Suppression of boron transient enhanced diffusion by C trapping 146
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 145
Self interstitials diffusion and clustering with impurities in crystalline silicon 138
Quantitative determination of short-range ordering in InxGa1- xAs1-yNy 137
Structural characterization of light elements in semiconductor materials by means of selected nuclear reactions 137
Totale 10.213
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Categoria #
all - tutte 29.926
article - articoli 27.161
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 371
Totale 57.458
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022647 0 0 153 68 20 28 31 92 31 16 94 114
2022/2023387 93 9 1 34 76 59 0 39 54 3 15 4
2023/2024161 8 43 12 12 14 12 3 2 5 1 24 25
2024/2025972 1 81 34 27 121 38 31 47 82 36 213 261
2025/20264.748 125 324 690 805 481 161 551 461 541 341 154 114
2026/2027431 165 193 73 0 0 0 0 0 0 0 0 0
Totale 10.213