BISOGNIN, GABRIELE
 Distribuzione geografica
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Continente #
NA - Nord America 3.573
EU - Europa 295
AS - Asia 180
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 4.051
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Nazione #
US - Stati Uniti d'America 3.571
CN - Cina 169
FI - Finlandia 91
UA - Ucraina 58
DE - Germania 53
SE - Svezia 31
GB - Regno Unito 29
IT - Italia 22
IN - India 10
IE - Irlanda 8
CA - Canada 2
AU - Australia 1
BG - Bulgaria 1
EU - Europa 1
FR - Francia 1
ID - Indonesia 1
NL - Olanda 1
TN - Tunisia 1
Totale 4.051
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Città #
Fairfield 679
Woodbridge 453
Houston 317
Jacksonville 299
Seattle 283
Ashburn 263
Wilmington 243
Cambridge 235
Ann Arbor 196
Chandler 149
Princeton 100
San Diego 70
Beijing 54
Nanjing 40
Helsinki 37
Boardman 24
Guangzhou 18
Nanchang 13
Norwalk 12
Jiaxing 11
Des Moines 10
Medford 10
Milan 10
Shenyang 10
Roxbury 9
Dublin 8
Hebei 8
London 6
Tianjin 6
Munich 5
Redwood City 5
Bangalore 4
Chieti 3
Indiana 3
Kharkiv 3
Kilburn 3
New York 3
Pune 3
Suri 3
Washington 3
Changsha 2
Chicago 2
Chiswick 2
Hangzhou 2
Hefei 2
San Francisco 2
Tappahannock 2
Acton 1
Bolton 1
Cervia 1
Christchurch 1
Edinburgh 1
Falls Church 1
Frankfurt am Main 1
Geislingen an der Steige 1
Greenwich 1
Groningen 1
Hounslow 1
Jakarta 1
Marburg 1
New Bedfont 1
Ogden 1
Padova 1
Prescot 1
Regina 1
Rome 1
Santa Lucia Di Piave 1
Simi Valley 1
Sofia 1
Sydney 1
Wandsworth 1
Xian 1
Zhengzhou 1
Totale 3.651
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Nome #
B clustering in amorphous Si 130
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 120
Dissolution kinetics of B clusters in crystalline Si 104
Boron diffusion in extrinsically doped crystalline silicon 101
Hydrogen diffusion in GaAs1-xNx 100
Formation and dissolution of D-N complexes in dilute nitrides 100
Iso-concentration study of atomistic mechanism of B diffusion in Si 99
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 98
Atomistic Mechanism of Boron Diffusion in Silicon 93
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 93
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 93
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 92
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 90
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 90
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 89
Nitrogen-induced hindering of In incorporation in InGaAsN 88
Effect of strain on the carrier mobility in heavily doped p-type Si 87
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 86
Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation 86
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si 83
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 82
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 82
Local structure of nitrogen-hydrogen complexes in dilute nitrides 81
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 79
Substitutional B in Si: Accurate lattice parameter determination 79
Evidence for a new hydrogen complex in dilute nitride alloys 78
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 73
Lattice strain induced by boron clusters in crystalline silicon 73
Substitutional and clustered B in ion implanted Ge: Strain determination 71
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 71
Implantation and activation of high concentrations of Boron in Germanium 69
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 68
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 68
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures 67
Suppression of boron transient enhanced diffusion by C trapping 65
Carrier mobility and strain effect in heavily doped p-type Si 65
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 64
Localization of He induced nanovoids in buried Si1-xGex thin films 64
High-level incorporation of antimony in germanium by laser annealing 63
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 62
Ion beam characterization of Fe implanted GaN 62
On the Strain Induced by Arsenic into Silicon 58
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs_{1−y}N_{y} alloys: Role of N-H_{n} centers with n>2 and their thermal stability 57
Role of ion mass on damage accumulation during ion implantation in Ge 57
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 57
High resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 56
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 55
Lattice strain and composition of boron-interstitial clusters in crystalline silicon 54
Self interstitials diffusion and clustering with impurities in crystalline silicon 50
New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure 49
Quantitative determination of short-range ordering in InxGa1- xAs1-yNy 47
Recent Insights in the Diffusion of Boron in Silicon and Germanium 46
Structural characterization of light elements in semiconductor materials by means of selected nuclear reactions 36
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 32
Totale 4.062
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Categoria #
all - tutte 13.326
article - articoli 12.189
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 94
Totale 25.609
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019362 0 0 0 0 0 0 0 0 0 0 193 169
2019/2020981 161 28 21 58 103 93 90 125 101 105 53 43
2020/2021865 27 49 9 76 76 177 19 58 179 52 108 35
2021/2022715 17 43 154 68 22 29 31 93 32 16 94 116
2022/2023390 95 9 1 34 77 59 0 39 54 3 15 4
2023/2024112 8 43 12 12 14 12 3 2 5 1 0 0
Totale 4.062