GASPAROTTO, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 4.564
EU - Europa 439
AS - Asia 232
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
Totale 5.240
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Nazione #
US - Stati Uniti d'America 4.563
CN - Cina 188
FI - Finlandia 120
DE - Germania 96
UA - Ucraina 72
IT - Italia 62
GB - Regno Unito 45
SE - Svezia 26
VN - Vietnam 23
IN - India 12
FR - Francia 7
JP - Giappone 6
IE - Irlanda 4
EU - Europa 3
CH - Svizzera 2
NL - Olanda 2
AU - Australia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
CA - Canada 1
LU - Lussemburgo 1
NZ - Nuova Zelanda 1
SG - Singapore 1
SK - Slovacchia (Repubblica Slovacca) 1
UZ - Uzbekistan 1
Totale 5.240
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Città #
Fairfield 979
Ashburn 406
Woodbridge 382
Seattle 373
Houston 347
Jacksonville 347
Cambridge 311
Wilmington 302
Chandler 237
Ann Arbor 174
Princeton 132
San Diego 84
Medford 49
Nanjing 48
Helsinki 43
Roxbury 33
Beijing 32
Padova 28
Dong Ket 23
Boardman 21
Munich 21
Des Moines 18
Norwalk 18
Nanchang 17
Guangzhou 15
Hebei 15
London 15
Changsha 13
New York 12
Jiaxing 10
Shenyang 10
Tianjin 10
Ogden 9
Indiana 7
Kilburn 7
Chiampo 6
Borås 5
Washington 5
Dublin 4
Ravenna 4
Kharkiv 3
Lanzhou 3
Mestre 3
Milan 3
Redwood City 3
Rockville 3
San Francisco 3
Villorba 3
Yellow Springs 3
Acton 2
Brendola 2
Falls Church 2
Hangzhou 2
Hounslow 2
Islington 2
Jinan 2
Las Vegas 2
Taizhou 2
Baku 1
Bulach 1
Cassino 1
Chicago 1
Chiswick 1
Costabissara 1
Dongguan 1
Fulham 1
Lappeenranta 1
Luxembourg 1
New Bedfont 1
Ningbo 1
Nürnberg 1
Occhiobello 1
Osaka 1
Pinehaven 1
Portland 1
Pune 1
Ružomberok 1
San Giacomo Vercellese 1
Sydney 1
Taiyuan 1
Tappahannock 1
Tashkent 1
Troyan 1
Venice 1
Yokohama 1
Zhengzhou 1
Totale 4.645
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Nome #
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 125
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 102
Spectroscopic characterization of the electrical properties of Fe implants on GaInP/GaAs 100
Channeling effects in high energy ion implantation: Si(N) 97
MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates 96
Gettering of Fe at the End of Range loops in Fe-implanted InP 87
Electrical activation of the Fe2+/3+ trap in Fe-implanted InP 86
Deep level thermal evolution in Fe implanted InP 84
Channeling Effects In High-energy Implantation of N+ In Silicon 83
In-depth photoluminescence spectra of pure CIGS thin films 82
Deep levels characterization in high temperature iron implanted InP 82
Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP 81
Local structure of iron implanted in indium phosphide 79
Atomic environment of Fe following high-temperature implantation in InP 79
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates 78
Al-o Interactions In Ion-implanted Crystalline Silicon 78
Stabilizing effects of n-type doping on Fe and Mn acceptors in III-V compounds 77
Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements 76
Thermal-stability of Tasix/n-gaas Metallizations 76
Electrical and structural characterization of Fe implanted GaInP 75
Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications 75
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 74
Annealing behavior of high temperature implanted Fe impurities in n-InP 74
Optical properties and applications of heavily Fe implanted InP 73
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon 73
Improved stability of CdTe solar cells by absorber surface etching 73
Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy 72
Effects of n-type doping on active Fe sites in ion implanted Fe in InP 72
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire 71
Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation 71
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 69
Mev Energy Implantation of Fe In Inp 69
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 69
Mechanisms for the activation of ion-implanted Fe in InP 68
High Fe solubility in InP by high temperature ion implantation 67
Incorporation of highly concentrated Iron impurities in InP by high temperature ion implantation 67
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 66
Semi-insulating behaviour in Fe MeV implanted n-type InP 65
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp 65
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 63
Pre-amorphization Damage Study In As-implanted Silicon 63
Measurements and Applications of High-energy Boron Implants In Silicon 63
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 62
High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates 62
Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena 62
Ion beam characterization of Fe implanted GaN 62
Oxidation induced precipitation in Al implanted epitaxial silicon 61
Implant and characterization of highly concentrated Fe deep centers in InP 61
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon 61
Axial Channeling of Boron Ions Into Silicon 61
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 61
High Fe2+/3+ trap concentration in heavily compensated implanted InP 60
Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP 60
Evolution of the local Fe environment in high temperature implanted InP 60
Electron-microscopy study of Fe-implanted InP 58
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 58
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications 58
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 58
Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP 57
Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP 56
Experimental-analysis of High-energy Boron Implantation In Silicon 56
Dopant Evaporation Sources For Molecular-beam Epitaxy 56
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 56
Hole mobility in aluminium implanted silicon 55
Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP 51
Thermal oxidation of high dose aluminum implanted silicon 51
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon 48
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 46
CIGS thin films grown by hybrid sputtering-evaporation method: Properties and PV performance 46
Defect characterization in InP substrates implanted with 2 MeV Fe ions 44
Metallorganic CVD of nanostructured composite TiO2-Pt thin films: a kinetics approach 43
MOCVD growth and characterization of cobalt phospide thin films on InP substrates 39
Deep-level electroluminescence at 3.5 µm from semi-insulating InP layers ion implanted with Fe 37
Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells 35
Mid-ir (3.5 µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP 33
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 31
Production of Semiinsulating Layers In N-doped Inp By Fe Implantation 28
Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP 26
Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs 24
Gallium In-Depth Profile in Bromine- Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy 24
Distribution of Fe and extended defects in Fe-implanted InP 23
Ion implantation and diffusion of Al in a SiO2/Si system 23
Laser induced crystallization of sputtered MoS2 thin films 22
High resistance buried layers by Fe MeV implantation in n-type InP 22
Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells 20
Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon 7
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 4
Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells 2
How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells 1
Totale 5.276
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Categoria #
all - tutte 19.984
article - articoli 17.042
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.026
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019545 0 0 0 0 0 0 0 0 0 0 295 250
2019/20201.442 235 54 16 118 160 128 139 177 161 111 74 69
2020/2021803 40 81 16 54 45 99 18 89 156 56 83 66
2021/20221.124 9 128 204 67 35 40 72 155 53 9 152 200
2022/2023588 167 42 8 42 103 64 3 52 66 1 31 9
2023/2024208 19 48 23 22 17 37 18 9 13 2 0 0
Totale 5.276