GASPAROTTO, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 4.857
EU - Europa 563
AS - Asia 504
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
Totale 5.929
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Nazione #
US - Stati Uniti d'America 4.851
CN - Cina 236
SG - Singapore 222
FI - Finlandia 122
DE - Germania 100
IT - Italia 77
UA - Ucraina 72
FR - Francia 59
GB - Regno Unito 46
RU - Federazione Russa 42
SE - Svezia 26
VN - Vietnam 23
IN - India 12
JP - Giappone 6
CA - Canada 5
NL - Olanda 5
IE - Irlanda 4
CH - Svizzera 3
EU - Europa 3
BE - Belgio 2
AT - Austria 1
AU - Australia 1
AZ - Azerbaigian 1
BG - Bulgaria 1
HK - Hong Kong 1
LT - Lituania 1
LU - Lussemburgo 1
MX - Messico 1
NZ - Nuova Zelanda 1
SK - Slovacchia (Repubblica Slovacca) 1
TR - Turchia 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 5.929
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Città #
Fairfield 979
Ashburn 408
Woodbridge 382
Seattle 373
Houston 347
Jacksonville 347
Cambridge 311
Wilmington 302
Chandler 237
Singapore 179
Ann Arbor 174
Santa Clara 133
Princeton 132
Boardman 109
San Diego 84
Medford 49
Nanjing 48
Helsinki 43
Beijing 33
Roxbury 33
Padova 30
Dong Ket 23
Munich 21
Des Moines 18
Norwalk 18
Guangzhou 17
Nanchang 17
London 16
Hebei 15
Changsha 13
New York 12
Jiaxing 10
Shenyang 10
Tianjin 10
Ogden 9
Indiana 7
Kilburn 7
Chiampo 6
Borås 5
Washington 5
Dublin 4
Ravenna 4
Kharkiv 3
Lanzhou 3
Lappeenranta 3
Mestre 3
Milan 3
Nuremberg 3
Ottawa 3
Redwood City 3
Rockville 3
San Francisco 3
Villorba 3
Yellow Springs 3
Acton 2
Brendola 2
Brussels 2
Falls Church 2
Ferrara 2
Hangzhou 2
Hounslow 2
Islington 2
Jinan 2
Las Vegas 2
Maserà di Padova 2
North Charleston 2
Quanzhou 2
Taizhou 2
Baku 1
Bulach 1
Cassino 1
Cesena 1
Chicago 1
Chiswick 1
Costabissara 1
Dongguan 1
Frankfurt am Main 1
Fulham 1
Hong Kong 1
Kaohsiung 1
Luxembourg 1
Mexico City 1
New Bedfont 1
Ningbo 1
Nürnberg 1
Occhiobello 1
Osaka 1
Paese 1
Parma 1
Pinehaven 1
Portland 1
Pune 1
Ružomberok 1
San Giacomo Vercellese 1
Scorzè 1
Shanghai 1
Sydney 1
Taiyuan 1
Tappahannock 1
Tashkent 1
Totale 5.076
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Nome #
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 138
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 114
Channeling effects in high energy ion implantation: Si(N) 109
Spectroscopic characterization of the electrical properties of Fe implants on GaInP/GaAs 105
MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates 102
Deep levels characterization in high temperature iron implanted InP 96
Channeling Effects In High-energy Implantation of N+ In Silicon 95
Electrical activation of the Fe2+/3+ trap in Fe-implanted InP 94
Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP 94
Gettering of Fe at the End of Range loops in Fe-implanted InP 91
Local structure of iron implanted in indium phosphide 89
Deep level thermal evolution in Fe implanted InP 89
Atomic environment of Fe following high-temperature implantation in InP 89
Al-o Interactions In Ion-implanted Crystalline Silicon 88
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates 86
In-depth photoluminescence spectra of pure CIGS thin films 86
Stabilizing effects of n-type doping on Fe and Mn acceptors in III-V compounds 84
Thermal-stability of Tasix/n-gaas Metallizations 84
Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements 82
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 82
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire 81
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 81
Annealing behavior of high temperature implanted Fe impurities in n-InP 80
Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications 80
Mechanisms for the activation of ion-implanted Fe in InP 80
Electrical and structural characterization of Fe implanted GaInP 79
Optical properties and applications of heavily Fe implanted InP 79
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon 79
Effects of n-type doping on active Fe sites in ion implanted Fe in InP 79
Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy 77
Mev Energy Implantation of Fe In Inp 77
Improved stability of CdTe solar cells by absorber surface etching 77
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 76
Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation 76
Incorporation of highly concentrated Iron impurities in InP by high temperature ion implantation 76
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 75
High Fe solubility in InP by high temperature ion implantation 74
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 71
Semi-insulating behaviour in Fe MeV implanted n-type InP 70
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 70
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp 70
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 70
Implant and characterization of highly concentrated Fe deep centers in InP 69
Oxidation induced precipitation in Al implanted epitaxial silicon 68
High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates 68
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon 68
Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena 68
Ion beam characterization of Fe implanted GaN 68
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 67
Pre-amorphization Damage Study In As-implanted Silicon 67
Measurements and Applications of High-energy Boron Implants In Silicon 67
High Fe2+/3+ trap concentration in heavily compensated implanted InP 67
Axial Channeling of Boron Ions Into Silicon 67
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 66
Evolution of the local Fe environment in high temperature implanted InP 66
Electron-microscopy study of Fe-implanted InP 65
Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP 65
Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP 63
Experimental-analysis of High-energy Boron Implantation In Silicon 63
Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP 62
Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP 62
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications 61
Dopant Evaporation Sources For Molecular-beam Epitaxy 61
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 60
CIGS thin films grown by hybrid sputtering-evaporation method: Properties and PV performance 60
Hole mobility in aluminium implanted silicon 59
Thermal oxidation of high dose aluminum implanted silicon 56
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon 56
Defect characterization in InP substrates implanted with 2 MeV Fe ions 55
Deep-level electroluminescence at 3.5 µm from semi-insulating InP layers ion implanted with Fe 52
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 52
Metallorganic CVD of nanostructured composite TiO2-Pt thin films: a kinetics approach 46
MOCVD growth and characterization of cobalt phospide thin films on InP substrates 46
Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells 46
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 41
Mid-ir (3.5 µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP 39
Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP 37
Laser induced crystallization of sputtered MoS2 thin films 35
Production of Semiinsulating Layers In N-doped Inp By Fe Implantation 33
Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells 33
Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs 30
Ion implantation and diffusion of Al in a SiO2/Si system 30
High resistance buried layers by Fe MeV implantation in n-type InP 29
Gallium In-Depth Profile in Bromine- Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy 29
Distribution of Fe and extended defects in Fe-implanted InP 27
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 24
Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells 18
Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon 14
How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells 7
Totale 5.966
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Categoria #
all - tutte 25.413
article - articoli 21.677
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 47.090
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020731 0 0 0 0 0 0 139 177 161 111 74 69
2020/2021803 40 81 16 54 45 99 18 89 156 56 83 66
2021/20221.124 9 128 204 67 35 40 72 155 53 9 152 200
2022/2023588 167 42 8 42 103 64 3 52 66 1 31 9
2023/2024294 19 48 23 22 17 37 18 9 13 2 30 56
2024/2025604 9 152 85 72 200 46 40 0 0 0 0 0
Totale 5.966