VACCARI, SIMONE
VACCARI, SIMONE
Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs
2012 Meneghini, Matteo; Vaccari, Simone; Trivellin, Nicola; D., Zhu; C., Humphreys; R., Butendheich; C., Leirer; B., Hahn; Meneghesso, Gaudenzio; Zanoni, Enrico
Anastomotic leak following oesophagectomy: research priorities from an international Delphi consensus study
2021 Kamarajah, Sivesh K; Mohamed, Imran; Nepogodiev, Dmitri; Evans, Richard P T; Hodson, James; Griffiths, Ewen A; Singh, Pritam; Kamarajah, Sivesh K; Griffiths, Ewen A; Singh, Pritam; Alderson, Derek; Bundred, James; Evans, Richard; Gossage, James; Griffiths, Ewen A; Jefferies, Benjamin; Kamarajah, Sivesh K; Mckay, Siobhan; Mohamed, Imran; Nepogodiev, Dmitri; Siaw-Acheampong, Kobby; Singh, Pritam; van Hillegersberg, Richard; Vohra, Ravinder; Wanigsooriya, Kasun; Whitehouse, Tony; Bekele, A; Achiam, M P; Ahmed, H; Ainsworth, A; Akhtar, K; Akkapulu, N; Al-Khyatt, W; Alasmar, M; Alemu, B N; Alfieri, R; Alkhaffaf, B; Alvarez, L S; Amahu, V; Andreollo, N A; Arias, F; Ariyarathenam, A; Arndt, A; Athanasiou, A; Azagra, J S; Baban, C; Babor, R; Baili, E; Balla, A; Beenen, E; Bendixen, M; Bennett, J; Bergeat, D; Bernardes, A J; Bernardi, D; Berrisford, R; Bianchi, A; Bjelovic, M; Blencowe, N; Boddy, A; Bogdan, S; Bolger, J; Bonavina, L; Bouras, G; Bouwense, S; Bowrey, D; Bragg, D; Bright, T N; Broderick, S; Buduhan, G; Byrne, B; Carey, D; Carroll, P; Carrott, P; Casaca, R; Castro, R G; Catton, J; Cerdeira, M P; Chang, A C; Charalabopoulos, A; Chaudry, A; Choh, C; Ciprian, B; Ciubotaru, C; Coe, P; Colak, E; Colino, R B; Colucci, N; Costa, P M; Daniela, K; Das, N; Davies, A; Davies, N; de Manzoni, G; del Val, I D; Dexter, S; Dolan, J; Donlon, N; Donohoe, C; Duffy, J; Dwerryhouse, S; Egberts, J H; Ekwunife, C; Elhadi, A; Elhadi, M; Elliott, J A; Elnagar, H; Elnagar, F; Faraj, H A; Farooq, N; Fearon, N; Fekaj, E; Forshaw, M; Freire, J; Gačevski, G; Gaedcke, J; Giacopuzzi, S; Gijón, M M; Gisbertz, S; Golcher, H; Gordon, A; Gossage, J; Griffiths, E; Grimminger, P; Guner, A; Gutknecht, S; Harustiak, T; Hedberg, J; Heisterkamp, J; Hii, M; Hindmarsh, A; Holm, J; Hornby, S; Isik, A; Izbicki, J; Jagadesham, V; Jaunoo, S; Johansson, J; Johnson, M A; Johnston, B; Kapoulas, S; Kauppi, J; Kauppila, J H; Kechagias, A; Kelly, M; Kelty, C; Kennedy, A; Khan, M; Khattak, S; Kidane, B; Kjaer, D W; Klarenbeek, B; Korkolis, D P; Koshy, R M; Krantz, S; Lagarde, S; Larsen, M H; Lau, P C; Leeder, P C; Leite, J S; Liakakos, T; Madhavan, A; Mahdi, S I; Mahendran, H A; Mahmoodzadeh, H; Majbar, A; Manatakis, D; Markar, S; Martijnse, I; Matei, B; Matos da Costa, P; Mccormack, K; Mcnally, S; Meriläinen, S; Merrett, N; Migliore, M; Mingol, F; Khan, M; Mitton, D; Mogoanta, S S; Mönig, S P; Moorthy, K; Muhinga, M; Mwachiro, M; Naeem, A; Nasir, I; Navidi, M; Negoi, I; Negoiță, V; Niazi, S K; Nilsson, M; Pazdro, A; Pera, M; Perez, C J; Perivoliotis, K; Peters, C; Phillips, A W; Powell, A; Prove, L; Pucher, P H; Rahman, S; Räsänen, J V; Read, M; Reeh, M; Reim, D; Reynolds, J; Robb, W B; Robertson, K; Rodica, B; Rosero, G; Rosman, C; Saadeh, L; Santos, Eg; Saunders, J; Sayyed, R; Schizas, D; Scurtu, R R; Sekhniaidze, D; Serralheiro, P A; Sevinç, B; Sgromo, B; Shakeel, O; Siemsen, M; Skipworth, R; Smith, B; Soares, A; Spillane, J; Steliga, M A; Sundbom, M; Sydiuk, A; Takahashi, A M L; Talbot, M; Tan, B; Tareen, M A; Tewari, N; Tez, M; Theodorou, D; Tita, A; Toledo, E; Townend, P J; Triantafyllou, T; Trugeda, M; Tucker, O; Turner, P; Turrado, V; Underwood, T; Vaccari, S; Valmasoni, M; van Berge Henegouwen, M; van Boxel, G; van den Berg, J W; van der Sluis, P; van Hillegersberg, R; van Lanschot, J J B; van Workum, F; Vickers, J; Videira, J; Viswanath, Y; Vohra, R; Voon, K; Wadley, M; Walker, R; Wallner, B; Walsh, T N; Weindelmayer, J; Welch, N; Wheatley, T; Wijnhoven, B; Wong, L F; Yanni, F; Yeung, J
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes
2014 Meneghini, Matteo; LA GRASSA, Marco; Vaccari, Simone; B., Galler; R., Zeisel; P., Drechsel; B., Hahn; Meneghesso, Gaudenzio; Zanoni, Enrico
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency
2011 Trivellin, Nicola; Meneghini, Matteo; DE SANTI, Carlo; Vaccari, Simone; Meneghesso, Gaudenzio; Zanoni, Enrico; Orita, K; Takigawa, S; Tanaka, T; Ueda, D.
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
2013 Meneghini, Matteo; Vaccari, Simone; Alessio, Garbujo; Trivellin, Nicola; Dandan, Zhu; Colin J., Humphreys; Marco, Calciati; Michele, Goano; Francesco, Bertazzi; Giovanni, Ghione; Enrico, Bellotti; Meneghesso, Gaudenzio; Zanoni, Enrico
ESD characterization of multi-chip RGB LEDs
2013 Vaccari, Simone; Meneghini, Matteo; A., Griffoni; Barbisan, Davide; Barbato, Marco; S., Carraro; M. L., Grassa; Meneghesso, Gaudenzio; Zanoni, Enrico
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements
2014 Meneghini, Matteo; Vaccari, Simone; DAL LAGO, Matteo; S., Marconi; Barbato, Marco; Trivellin, Nicola; A., Griffoni; A., Alfier; G., Verzellesi; Meneghesso, Gaudenzio; Zanoni, Enrico
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
2013 DE SANTI, Carlo; Meneghini, Matteo; Carraro, Simone; Vaccari, Simone; Trivellin, Nicola; S., Marconi; M., Marioli; Meneghesso, Gaudenzio; Zanoni, Enrico