MARINO, FABIO ALESSIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.204
EU - Europa 131
AS - Asia 76
Totale 1.411
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Nazione #
US - Stati Uniti d'America 1.203
CN - Cina 67
UA - Ucraina 44
FI - Finlandia 31
IT - Italia 20
SE - Svezia 14
DE - Germania 9
GB - Regno Unito 5
IN - India 4
IE - Irlanda 3
NL - Olanda 3
TW - Taiwan 2
CA - Canada 1
HK - Hong Kong 1
KR - Corea 1
RO - Romania 1
SI - Slovenia 1
VN - Vietnam 1
Totale 1.411
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Città #
Fairfield 172
Woodbridge 145
Ann Arbor 128
Ashburn 104
Houston 93
Chandler 79
Seattle 72
Wilmington 65
Jacksonville 63
Cambridge 47
Beijing 31
Des Moines 31
Princeton 25
San Diego 21
Medford 19
Roxbury 19
Nanjing 16
Boardman 10
Helsinki 10
Philadelphia 8
Cagliari 6
Hebei 4
Changsha 3
Dublin 3
New York 3
Norwalk 3
Padova 3
Shenyang 3
Guangzhou 2
Indiana 2
Jiaxing 2
Kharkiv 2
London 2
Nanchang 2
Ogden 2
Pieve di Soligo 2
Roermond 2
Taipei 2
Vista 2
Yellow Springs 2
Brasov 1
Cittadella 1
Dallas 1
Hanoi 1
Hendon 1
Pieve 1
Redwood City 1
San Mateo 1
Seoul 1
Tappahannock 1
Tianjin 1
Toronto 1
Xian 1
Totale 1.223
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 168
Alternative MOS Devices for the Manufacture of High-Density ICs 147
Development of a New High Holding Voltage SCR-based ESD Protection Structure 113
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology 96
Multifunctional Field-Effect Transistor for High-Density Integrated Circuits 90
Multi-gate Enhancement Mode AlGaN/GaN HEMT 90
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 87
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications 75
Breakdown investigation in GaN-based MIS-HEMT devices 55
Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits 54
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 50
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 47
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 45
Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits 43
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 42
Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits 41
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 41
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 34
Advanced Simulation Methods for the Development and Characterization of New Devices 30
Transistore ad effetto di campo con giunzione metallo semiconduttore 24
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 22
Field Effect Transistor with Metal-Semiconductor Junction 19
Totale 1.413
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Categoria #
all - tutte 4.377
article - articoli 1.497
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 862
selected - selezionate 0
volume - volumi 0
Totale 6.736
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201976 0 0 0 0 0 0 0 0 0 15 34 27
2019/2020369 41 5 1 106 33 22 23 31 35 43 18 11
2020/2021178 12 11 18 12 12 17 8 21 24 15 18 10
2021/2022231 8 40 31 13 2 7 9 22 5 3 25 66
2022/2023209 34 0 0 17 43 56 0 16 28 0 14 1
2023/202473 6 8 1 3 0 3 31 19 2 0 0 0
Totale 1.413