MARINO, FABIO ALESSIO
 Distribuzione geografica
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Continente #
NA - Nord America 1117
EU - Europa 120
AS - Asia 75
Totale 1312
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Nazione #
US - Stati Uniti d'America 1116
CN - Cina 67
UA - Ucraina 44
FI - Finlandia 28
IT - Italia 14
SE - Svezia 14
DE - Germania 9
GB - Regno Unito 5
IN - India 4
IE - Irlanda 3
TW - Taiwan 2
CA - Canada 1
KR - Corea 1
NL - Olanda 1
RO - Romania 1
SI - Slovenia 1
VN - Vietnam 1
Totale 1312
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Città #
Fairfield 172
Woodbridge 145
Ann Arbor 128
Houston 93
Chandler 79
Seattle 71
Wilmington 65
Jacksonville 63
Ashburn 62
Cambridge 47
Beijing 31
Des Moines 31
Princeton 25
San Diego 21
Medford 19
Roxbury 19
Nanjing 16
Boardman 10
Philadelphia 8
Helsinki 7
Hebei 4
Changsha 3
Dublin 3
Norwalk 3
Padova 3
Shenyang 3
Guangzhou 2
Indiana 2
Jiaxing 2
Kharkiv 2
London 2
Nanchang 2
Pieve di Soligo 2
Taipei 2
Vista 2
Yellow Springs 2
Brasov 1
Cittadella 1
Hanoi 1
Hendon 1
New York 1
Pieve 1
Redwood City 1
San Mateo 1
Seoul 1
Tianjin 1
Toronto 1
Xian 1
Totale 1163
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 165
Alternative MOS Devices for the Manufacture of High-Density ICs 143
Development of a New High Holding Voltage SCR-based ESD Protection Structure 111
Multifunctional Field-Effect Transistor for High-Density Integrated Circuits 87
Multi-gate Enhancement Mode AlGaN/GaN HEMT 86
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 84
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology 80
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications 71
Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits 51
Breakdown investigation in GaN-based MIS-HEMT devices 51
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 45
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 43
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 43
Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits 41
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 39
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 36
Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits 32
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 31
Transistore ad effetto di campo con giunzione metallo semiconduttore 21
Advanced Simulation Methods for the Development and Characterization of New Devices 20
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 19
Field Effect Transistor with Metal-Semiconductor Junction 15
Totale 1314
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Categoria #
all - tutte 2283
article - articoli 707
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 463
selected - selezionate 0
volume - volumi 0
Totale 3453
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201815 0000 00 00 00150
2018/201998 31120 00 06 0153427
2019/2020369 4151106 3322 2331 35431811
2020/2021178 12111812 1217 821 24151810
2021/2022231 8403113 27 922 532566
2022/2023183 340017 4356 016 17000
Totale 1314