BUTTARI, DARIO
 Distribuzione geografica
Continente #
NA - Nord America 1.129
EU - Europa 73
AS - Asia 55
Totale 1.257
Nazione #
US - Stati Uniti d'America 1.129
CN - Cina 48
FI - Finlandia 24
DE - Germania 21
UA - Ucraina 18
VN - Vietnam 5
GB - Regno Unito 4
SE - Svezia 4
KR - Corea 2
IE - Irlanda 1
IT - Italia 1
Totale 1.257
Città #
Fairfield 171
Woodbridge 138
Ann Arbor 132
Houston 132
Ashburn 82
Jacksonville 81
Wilmington 72
Chandler 59
Seattle 59
Cambridge 51
Des Moines 27
Beijing 26
Princeton 21
Medford 10
Helsinki 9
San Diego 8
Nanjing 6
Dong Ket 5
Jiaxing 5
Nanchang 3
Redwood City 3
Boardman 2
Indiana 2
Kharkiv 2
London 2
Norwalk 2
Roxbury 2
San Francisco 2
Shenyang 2
Changsha 1
Dublin 1
Hebei 1
Jinan 1
New York 1
San Jose 1
Seongbuk-gu 1
Southend 1
Tianjin 1
Washington 1
Xian 1
Zhengzhou 1
Totale 1.128
Nome #
2.1 A/mm current density AlGaN/GaN HEMT 147
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 146
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 140
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 101
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 97
Parasitic effects and long term stability of InP-based HEMTs 91
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 85
DC and Pulsed measurements of on-state breakdown voltage 77
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 75
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 72
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 68
Characterization and reliability of InP-based HEMTs implemented with different process options 51
Current Collapse in AlGaN/GaN HEMTs 51
Hot Electrons and Reliability in HEMTs 36
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 21
Totale 1.258
Categoria #
all - tutte 4.179
article - articoli 1.928
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.107


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201973 0 0 0 0 0 0 0 0 0 0 38 35
2019/2020390 39 6 1 113 33 29 27 39 33 33 27 10
2020/2021158 14 10 10 4 5 22 2 24 23 14 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202442 6 11 4 7 1 9 3 0 1 0 0 0
Totale 1.258