BUTTARI, DARIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.257
AS - Asia 247
EU - Europa 193
AF - Africa 41
SA - Sud America 38
OC - Oceania 6
Totale 1.782
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Nazione #
US - Stati Uniti d'America 1.231
SG - Singapore 85
CN - Cina 67
DE - Germania 39
HK - Hong Kong 35
PL - Polonia 28
FI - Finlandia 27
BR - Brasile 25
UA - Ucraina 19
FR - Francia 10
GB - Regno Unito 8
RU - Federazione Russa 8
BA - Bosnia-Erzegovina 6
VN - Vietnam 6
MX - Messico 5
SE - Svezia 5
SK - Slovacchia (Repubblica Slovacca) 5
BE - Belgio 4
HU - Ungheria 4
KR - Corea 4
LA - Repubblica Popolare Democratica del Laos 4
AT - Austria 3
BW - Botswana 3
CA - Canada 3
DO - Repubblica Dominicana 3
IT - Italia 3
JO - Giordania 3
KH - Cambogia 3
MN - Mongolia 3
TJ - Tagikistan 3
TR - Turchia 3
TW - Taiwan 3
TZ - Tanzania 3
VE - Venezuela 3
AD - Andorra 2
AL - Albania 2
AM - Armenia 2
AR - Argentina 2
BD - Bangladesh 2
BO - Bolivia 2
CV - Capo Verde 2
EE - Estonia 2
EG - Egitto 2
ET - Etiopia 2
GA - Gabon 2
GE - Georgia 2
GH - Ghana 2
GP - Guadalupe 2
IE - Irlanda 2
IN - India 2
IR - Iran 2
IS - Islanda 2
JP - Giappone 2
KG - Kirghizistan 2
MW - Malawi 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PE - Perù 2
PS - Palestinian Territory 2
PT - Portogallo 2
RO - Romania 2
SA - Arabia Saudita 2
SD - Sudan 2
TT - Trinidad e Tobago 2
VC - Saint Vincent e Grenadine 2
ZM - Zambia 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
AU - Australia 1
AZ - Azerbaigian 1
BJ - Benin 1
BS - Bahamas 1
BY - Bielorussia 1
BZ - Belize 1
CG - Congo 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CL - Cile 1
CM - Camerun 1
CO - Colombia 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
ES - Italia 1
GN - Guinea 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
HT - Haiti 1
ID - Indonesia 1
IQ - Iraq 1
KE - Kenya 1
KY - Cayman, isole 1
KZ - Kazakistan 1
LT - Lituania 1
LV - Lettonia 1
LY - Libia 1
MA - Marocco 1
MD - Moldavia 1
ML - Mali 1
Totale 1.762
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Città #
Fairfield 171
Woodbridge 138
Ann Arbor 132
Houston 132
Ashburn 92
Jacksonville 81
Wilmington 72
Seattle 60
Chandler 59
Singapore 54
Cambridge 51
Hong Kong 34
Santa Clara 32
Des Moines 27
Beijing 26
Bytom 26
Princeton 21
Boardman 17
Helsinki 11
Medford 10
Munich 10
San Diego 8
Nanjing 6
Dong Ket 5
Falkenstein 5
Jiaxing 5
New York 5
Vientiane 4
Amman 3
Boston 3
Brooklyn 3
Budapest 3
Dar es Salaam 3
Dushanbe 3
Mexico City 3
Nanchang 3
Phnom Penh 3
Redwood City 3
San Francisco 3
São Paulo 3
Toronto 3
Ulan Bator 3
Addis Ababa 2
Andorra la Vella 2
Bratislava 2
Brussels 2
Cairo 2
Campinas 2
Changsha 2
Chennai 2
Chicago 2
Gaborone 2
Indiana 2
Ithaca 2
Kharkiv 2
Kingstown 2
Les Abymes 2
Libreville 2
London 2
Lusaka 2
Norwalk 2
Port of Spain 2
Praia 2
Rio de Janeiro 2
Roxbury 2
Shenyang 2
Taoyuan District 2
Yerevan 2
Abidjan 1
Accra 1
Amsterdam 1
Ankara 1
Astana 1
Auckland 1
Baghdad 1
Bamako 1
Bambuí 1
Benghazi 1
Beni Mellal 1
Berat 1
Bijeljina 1
Birmingham 1
Bishkek 1
Blantyre 1
Bom Jesus do Itabapoana 1
Brasília 1
Bray 1
Brisbane 1
Brody 1
Bucharest 1
Cabanatuan City 1
Cachoeiras de Macacu 1
Catania 1
Chisinau 1
Cochabamba 1
Cocoa 1
Conakry 1
Corozal 1
Coudun 1
Dakar 1
Totale 1.420
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Nome #
2.1 A/mm current density AlGaN/GaN HEMT 189
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 186
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 177
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 136
Parasitic effects and long term stability of InP-based HEMTs 129
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 128
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 116
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 112
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 110
DC and Pulsed measurements of on-state breakdown voltage 108
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 107
Current Collapse in AlGaN/GaN HEMTs 87
Characterization and reliability of InP-based HEMTs implemented with different process options 79
Hot Electrons and Reliability in HEMTs 66
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 53
Totale 1.783
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Categoria #
all - tutte 6.628
article - articoli 2.941
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.569
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021134 0 0 10 4 5 22 2 24 23 14 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/2025296 0 5 8 23 32 31 21 25 15 3 62 71
2025/2026215 42 90 83 0 0 0 0 0 0 0 0 0
Totale 1.783