BUTTARI, DARIO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 1.345
AS - Asia 432
EU - Europa 233
AF - Africa 85
SA - Sud America 78
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.186
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 1.290
SG - Singapore 167
CN - Cina 98
DE - Germania 40
BR - Brasile 39
HK - Hong Kong 37
VN - Vietnam 31
PL - Polonia 29
FI - Finlandia 27
UA - Ucraina 22
FR - Francia 10
GB - Regno Unito 9
MX - Messico 9
AR - Argentina 8
RU - Federazione Russa 8
BA - Bosnia-Erzegovina 7
KR - Corea 7
PY - Paraguay 7
SK - Slovacchia (Repubblica Slovacca) 7
BE - Belgio 6
LA - Repubblica Popolare Democratica del Laos 6
NI - Nicaragua 6
PS - Palestinian Territory 6
SE - Svezia 6
TR - Turchia 6
VE - Venezuela 6
AO - Angola 5
BW - Botswana 5
ET - Etiopia 5
IN - India 5
JO - Giordania 5
JP - Giappone 5
SN - Senegal 5
ZA - Sudafrica 5
AD - Andorra 4
AM - Armenia 4
BY - Bielorussia 4
BZ - Belize 4
CG - Congo 4
CO - Colombia 4
DO - Repubblica Dominicana 4
GE - Georgia 4
HT - Haiti 4
HU - Ungheria 4
IT - Italia 4
KH - Cambogia 4
MN - Mongolia 4
NO - Norvegia 4
PE - Perù 4
RO - Romania 4
SA - Arabia Saudita 4
TZ - Tanzania 4
AT - Austria 3
AZ - Azerbaigian 3
BD - Bangladesh 3
BO - Bolivia 3
CA - Canada 3
CL - Cile 3
CY - Cipro 3
CZ - Repubblica Ceca 3
EG - Egitto 3
ES - Italia 3
GP - Guadalupe 3
IE - Irlanda 3
IQ - Iraq 3
IR - Iran 3
JM - Giamaica 3
LV - Lettonia 3
LY - Libia 3
MD - Moldavia 3
MG - Madagascar 3
ML - Mali 3
MW - Malawi 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PF - Polinesia Francese 3
PG - Papua Nuova Guinea 3
RS - Serbia 3
TJ - Tagikistan 3
TT - Trinidad e Tobago 3
TW - Taiwan 3
UG - Uganda 3
AL - Albania 2
BS - Bahamas 2
CI - Costa d'Avorio 2
CV - Capo Verde 2
EE - Estonia 2
GA - Gabon 2
GH - Ghana 2
GM - Gambi 2
GN - Guinea 2
GR - Grecia 2
GT - Guatemala 2
HN - Honduras 2
HR - Croazia 2
IS - Islanda 2
KE - Kenya 2
KG - Kirghizistan 2
KZ - Kazakistan 2
MK - Macedonia 2
Totale 2.132
Salva come PNG Salva come JPEG
Città #
Fairfield 171
Woodbridge 138
Ann Arbor 132
Houston 132
Ashburn 118
Singapore 88
Jacksonville 81
Wilmington 72
Seattle 62
Chandler 59
Cambridge 51
Beijing 41
Hong Kong 36
Santa Clara 34
Des Moines 27
Bytom 26
Princeton 21
Boardman 17
Helsinki 11
Medford 10
Munich 10
Ho Chi Minh City 9
Los Angeles 9
Hanoi 8
San Diego 8
Managua 6
Nanjing 6
New York 6
Addis Ababa 5
Amman 5
Chicago 5
Dakar 5
Dong Ket 5
Falkenstein 5
Jiaxing 5
São Paulo 5
Vientiane 5
Andorra la Vella 4
Dar es Salaam 4
Fort Liberté 4
Mexico City 4
Phnom Penh 4
Tokyo 4
Ulan Bator 4
Antananarivo 3
Boston 3
Bratislava 3
Brooklyn 3
Budapest 3
Dushanbe 3
Gaborone 3
Kampala 3
Luanda 3
Nanchang 3
Nicosia 3
Phoenix 3
Port Moresby 3
Redwood City 3
Riga 3
San Francisco 3
Toronto 3
Yerevan 3
Abidjan 2
Athens 2
Baghdad 2
Bamako 2
Bangkok 2
Belgrade 2
Brno 2
Brussels 2
Bucharest 2
Buffalo 2
Cabinda 2
Cairo 2
Campinas 2
Cape Town 2
Changsha 2
Chennai 2
Chisinau 2
Conakry 2
Durban 2
Frankfurt am Main 2
Guatemala City 2
Indiana 2
Ithaca 2
Jeddah 2
Jenin 2
Kathmandu 2
Kharkiv 2
Kingston 2
Kingstown 2
Les Abymes 2
Libreville 2
Lilongwe 2
London 2
Lusaka 2
Maitengwe 2
Minsk 2
Nairobi 2
Nassau 2
Totale 1.592
Salva come PNG Salva come JPEG
Nome #
2.1 A/mm current density AlGaN/GaN HEMT 226
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 212
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 208
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 173
Parasitic effects and long term stability of InP-based HEMTs 153
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 147
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 146
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 146
DC and Pulsed measurements of on-state breakdown voltage 141
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 130
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 130
Current Collapse in AlGaN/GaN HEMTs 110
Characterization and reliability of InP-based HEMTs implemented with different process options 109
Hot Electrons and Reliability in HEMTs 85
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 71
Totale 2.187
Salva come PNG Salva come JPEG
Categoria #
all - tutte 7.335
article - articoli 3.262
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.597
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021115 0 0 0 0 0 22 2 24 23 14 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/2025296 0 5 8 23 32 31 21 25 15 3 62 71
2025/2026619 42 90 131 156 171 29 0 0 0 0 0 0
Totale 2.187