With this work we report on characterization and reliability analysis of 280 nm high power commercial LEDs emitting 18 mW at 200 mA, with a peak wavelength of 280 nm. Spectral characterization reports the presence of a main emission peak and a sideband peak separated by 0.8 eV. DLTS analysis has also been carried out identifying two different defect traps, a deep level for electrons with E a = 0.73-0.92 eV and a shallow level for holes with E a = 0.18-0.28 eV. Results from constant current degradation tests report two different degradation mechanisms, a first degradation kinetic more noticeable at high current and a second more intense kinetic correlated to the increase of a third peak at higher wavelength. The work then suggests a reasoned interpretation by comparing the results with literature.

Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence

Trivellin N.
;
Monti D.;Piva F.;Buffolo M.;De Santi C.;Zanoni E.;Meneghesso G.;Meneghini M.
2019

Abstract

With this work we report on characterization and reliability analysis of 280 nm high power commercial LEDs emitting 18 mW at 200 mA, with a peak wavelength of 280 nm. Spectral characterization reports the presence of a main emission peak and a sideband peak separated by 0.8 eV. DLTS analysis has also been carried out identifying two different defect traps, a deep level for electrons with E a = 0.73-0.92 eV and a shallow level for holes with E a = 0.18-0.28 eV. Results from constant current degradation tests report two different degradation mechanisms, a first degradation kinetic more noticeable at high current and a second more intense kinetic correlated to the increase of a third peak at higher wavelength. The work then suggests a reasoned interpretation by comparing the results with literature.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3327058
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