Reverse-bias stability in PV devices is critical to guarantee adequate reliability during sporadic shading instances or when deliberately applying reverse-bias in photodetection applications. Testing reverse-bias stability on PSCs is crucial in providing characterizing insights both into the current state and performance of such devices and also towards their iterative improvement. This paper describes reverse-bias stability testing of semi-transparent FAPbBr3 perovskite solar cells. Stability against reverse-bias was extensively evaluated through both reverse-bias step-stress (RBSS) tests and constant-bias stress (CBS) tests at different voltage bias intensities. During a series of 10 ks tests, cells were revealed to be stable when operated down to −1.5 V (corresponding to approximately 20 % of the breakdown voltage threshold), whereas at −3 V the observed degradation mainly consists in a decrease in open-circuit voltage (from ∼1.5 ÷ 1.6 V to as low as 0.3 V) and parallel resistance (...

Recoverable degradation of FAPbBr3 perovskite solar cells under reverse-bias: A combined electro-optical investigation

Tormena N.;Caria A.;Buffolo M.;De Santi C.;Cester A.;Meneghesso G.;Zanoni E.;Trivellin N.;Meneghini M.
2025

Abstract

Reverse-bias stability in PV devices is critical to guarantee adequate reliability during sporadic shading instances or when deliberately applying reverse-bias in photodetection applications. Testing reverse-bias stability on PSCs is crucial in providing characterizing insights both into the current state and performance of such devices and also towards their iterative improvement. This paper describes reverse-bias stability testing of semi-transparent FAPbBr3 perovskite solar cells. Stability against reverse-bias was extensively evaluated through both reverse-bias step-stress (RBSS) tests and constant-bias stress (CBS) tests at different voltage bias intensities. During a series of 10 ks tests, cells were revealed to be stable when operated down to −1.5 V (corresponding to approximately 20 % of the breakdown voltage threshold), whereas at −3 V the observed degradation mainly consists in a decrease in open-circuit voltage (from ∼1.5 ÷ 1.6 V to as low as 0.3 V) and parallel resistance (...
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3550095
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