De-trapping mechanisms and their dependence on applied bias have been studied in RF buffer-free AIGaN/GaN HEMTs on SiC. De-trapping time decreases by several orders of magnitude when the device is biased. The role of electroluminescence radiation emitted by the device in promoting in-situ trap photoionization is discussed.
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications
Pieri, Francesco De;Fregolent, Manuel;Saro, Marco;Carlotto, Andrea;Boito, Mirco;Santi, Carlo De;Rampazzo, Fabiana;Meneghesso, Gaudenzio;Meneghini, Matteo;Zanoni, Enrico
2025
Abstract
De-trapping mechanisms and their dependence on applied bias have been studied in RF buffer-free AIGaN/GaN HEMTs on SiC. De-trapping time decreases by several orders of magnitude when the device is biased. The role of electroluminescence radiation emitted by the device in promoting in-situ trap photoionization is discussed.
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