CHINI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 1.971
EU - Europa 185
AS - Asia 113
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.270
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Nazione #
US - Stati Uniti d'America 1.967
CN - Cina 96
FI - Finlandia 52
DE - Germania 28
SE - Svezia 28
UA - Ucraina 28
IT - Italia 26
GB - Regno Unito 12
GR - Grecia 6
VN - Vietnam 5
CA - Canada 4
IE - Irlanda 3
IN - India 3
TR - Turchia 3
JP - Giappone 2
KR - Corea 2
TW - Taiwan 2
EU - Europa 1
FR - Francia 1
NL - Olanda 1
Totale 2.270
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Città #
Fairfield 292
Ann Arbor 239
Houston 236
Woodbridge 193
Ashburn 133
Wilmington 124
Jacksonville 123
Seattle 115
Chandler 109
Cambridge 79
Princeton 45
Beijing 43
Des Moines 32
Helsinki 24
Medford 24
San Diego 16
Guangzhou 14
Nanjing 13
Boardman 12
Roxbury 7
Jiaxing 6
Padova 6
Redwood City 6
Dong Ket 5
Indiana 5
Nanchang 5
Bologna 4
Hebei 4
Shenyang 4
Tappahannock 4
Dublin 3
London 3
New York 3
North York 3
Norwalk 3
Tianjin 3
Bengaluru 2
Bolzano 2
Grantorto 2
Kharkiv 2
New Bedfont 2
Tokyo 2
Washington 2
Yenibosna 2
Zhengzhou 2
Zhubei 2
Amsterdam 1
Borås 1
Bridgend 1
Buk-gu 1
Changsha 1
Chicago 1
Chiswick 1
Dallas 1
Fredericton 1
Istanbul 1
Paris 1
Plano 1
Rome 1
Southend 1
Totale 1.974
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Nome #
2.1 A/mm current density AlGaN/GaN HEMT 147
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 146
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 140
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 124
Diagnosis of trapping phenomena in GaN MESFETs 124
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 124
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 113
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 100
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 97
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 97
Parasitic effects and long term stability of InP-based HEMTs 91
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 75
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 73
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 72
Dependence of Impact Ionization and Kink on Surface-Deep-Level Dynamics in AlGaAs/GaAs HFETs 64
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 63
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 60
Characterization and reliability of InP-based HEMTs implemented with different process options 51
Current Collapse in AlGaN/GaN HEMTs 51
Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations 50
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 49
Reliability aspects of GaN microwave devices 46
Instabilities and degradation in GaN-based devices 46
Reliability aspects of GaN microwave devices 45
Electrostatic discharge and electrical overstress on GaN/InGaN Light Emitting Diodes 43
Trap-Related Effects in 6H-SiC Buried-Gate JFET's 36
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 36
Deep traps related effects in GaN MESFETs grown on sapphire substrate 35
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 24
GaN-based power devices: Physics, reliability, and perspectives 23
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 21
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 15
Totale 2.281
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Categoria #
all - tutte 7.813
article - articoli 3.708
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.521
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019121 0 0 0 0 0 0 0 0 0 0 64 57
2019/2020658 60 11 4 187 57 57 43 65 54 57 42 21
2020/2021291 20 26 16 6 20 37 6 43 35 29 28 25
2021/2022280 5 30 44 8 14 15 7 41 16 3 44 53
2022/2023305 60 1 1 28 57 64 0 21 46 1 21 5
2023/2024103 20 12 20 14 8 21 2 1 3 2 0 0
Totale 2.281