CHINI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 2.261
AS - Asia 571
EU - Europa 412
AF - Africa 105
SA - Sud America 104
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 3
Totale 3.469
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Nazione #
US - Stati Uniti d'America 2.206
SG - Singapore 187
CN - Cina 136
HK - Hong Kong 118
BR - Brasile 70
FI - Finlandia 61
PL - Polonia 59
DE - Germania 56
IT - Italia 36
UA - Ucraina 31
SE - Svezia 29
FR - Francia 20
GB - Regno Unito 17
VN - Vietnam 14
RU - Federazione Russa 13
KR - Corea 11
CA - Canada 9
GR - Grecia 8
NP - Nepal 8
AR - Argentina 7
BE - Belgio 7
EG - Egitto 7
IN - India 7
MX - Messico 7
TR - Turchia 7
BA - Bosnia-Erzegovina 6
EC - Ecuador 6
KH - Cambogia 6
MN - Mongolia 6
NL - Olanda 6
ZM - Zambia 6
CG - Congo 5
GP - Guadalupe 5
LA - Repubblica Popolare Democratica del Laos 5
PK - Pakistan 5
TZ - Tanzania 5
VE - Venezuela 5
AD - Andorra 4
BO - Bolivia 4
BW - Botswana 4
CH - Svizzera 4
CO - Colombia 4
CR - Costa Rica 4
DK - Danimarca 4
ID - Indonesia 4
IR - Iran 4
JO - Giordania 4
JP - Giappone 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
PT - Portogallo 4
SA - Arabia Saudita 4
SD - Sudan 4
SK - Slovacchia (Repubblica Slovacca) 4
SN - Senegal 4
TN - Tunisia 4
UY - Uruguay 4
YT - Mayotte 4
AE - Emirati Arabi Uniti 3
AM - Armenia 3
AT - Austria 3
AU - Australia 3
BD - Bangladesh 3
BF - Burkina Faso 3
BS - Bahamas 3
CM - Camerun 3
CV - Capo Verde 3
CZ - Repubblica Ceca 3
DO - Repubblica Dominicana 3
EE - Estonia 3
ES - Italia 3
ET - Etiopia 3
GA - Gabon 3
GN - Guinea 3
HU - Ungheria 3
IE - Irlanda 3
IQ - Iraq 3
IS - Islanda 3
JM - Giamaica 3
LY - Libia 3
NG - Nigeria 3
NO - Norvegia 3
PA - Panama 3
TW - Taiwan 3
UG - Uganda 3
YE - Yemen 3
AL - Albania 2
AO - Angola 2
BB - Barbados 2
BG - Bulgaria 2
BJ - Benin 2
BY - Bielorussia 2
CI - Costa d'Avorio 2
DZ - Algeria 2
GE - Georgia 2
GH - Ghana 2
GT - Guatemala 2
HN - Honduras 2
HR - Croazia 2
IL - Israele 2
Totale 3.393
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Città #
Fairfield 292
Ann Arbor 239
Houston 236
Woodbridge 193
Ashburn 170
Singapore 125
Wilmington 124
Jacksonville 123
Seattle 117
Hong Kong 115
Chandler 109
Cambridge 79
Santa Clara 78
Bytom 56
Beijing 47
Princeton 45
Boardman 43
Des Moines 32
Helsinki 30
Medford 24
San Diego 16
Guangzhou 15
Nanjing 13
Munich 12
São Paulo 11
New York 9
Roxbury 7
Jiaxing 6
Padova 6
Phnom Penh 6
Redwood City 6
Ulan Bator 6
Chicago 5
Dar es Salaam 5
Dong Ket 5
Ho Chi Minh City 5
Indiana 5
Lusaka 5
Nanchang 5
Shenyang 5
Vientiane 5
Amman 4
Andorra la Vella 4
Bologna 4
Brooklyn 4
Chennai 4
Dakar 4
Falkenstein 4
Guayaquil 4
Hebei 4
Hefei 4
Riga 4
San Francisco 4
San José 4
Tappahannock 4
Addis Ababa 3
Amsterdam 3
Auckland 3
Baghdad 3
Brazzaville 3
Brussels 3
Conakry 3
Dublin 3
Gaborone 3
Kampala 3
Kathmandu 3
Les Abymes 3
Libreville 3
London 3
Mamoudzou 3
Mexico City 3
Milan 3
Nassau 3
North York 3
Norwalk 3
Panama City 3
Praia 3
Rio de Janeiro 3
Tianjin 3
Tokyo 3
Washington 3
Abidjan 2
Bamako 2
Bengaluru 2
Bolzano 2
Boston 2
Bridgetown 2
Budapest 2
Cairo 2
Campinas 2
Castries 2
Copenhagen 2
Denver 2
Douala 2
Dushanbe 2
Genoa 2
Grantorto 2
Guatemala City 2
Hanoi 2
Harare 2
Totale 2.607
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Nome #
2.1 A/mm current density AlGaN/GaN HEMT 188
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 184
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 176
Diagnosis of trapping phenomena in GaN MESFETs 161
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 158
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 155
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 151
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 151
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 134
Parasitic effects and long term stability of InP-based HEMTs 129
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 121
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 113
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 111
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 107
Dependence of Impact Ionization and Kink on Surface-Deep-Level Dynamics in AlGaAs/GaAs HFETs 102
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 100
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 98
Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations 93
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 91
Current Collapse in AlGaN/GaN HEMTs 87
Reliability aspects of GaN microwave devices 84
GaN-based power devices: Physics, reliability, and perspectives 80
Electrostatic discharge and electrical overstress on GaN/InGaN Light Emitting Diodes 79
Characterization and reliability of InP-based HEMTs implemented with different process options 79
Instabilities and degradation in GaN-based devices 75
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 74
Reliability aspects of GaN microwave devices 69
Deep traps related effects in GaN MESFETs grown on sapphire substrate 65
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 62
Trap-Related Effects in 6H-SiC Buried-Gate JFET's 60
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 60
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 52
Physical Modelling of Charge Trapping Effects 32
Totale 3.481
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Categoria #
all - tutte 12.702
article - articoli 5.716
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 102
Totale 18.520
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021245 0 0 16 6 20 37 6 43 35 29 28 25
2021/2022280 5 30 44 8 14 15 7 41 16 3 44 53
2022/2023305 60 1 1 28 57 64 0 21 46 1 21 5
2023/2024131 20 12 20 14 8 21 2 1 3 2 13 15
2024/2025680 0 27 24 40 81 54 45 60 26 17 137 169
2025/2026492 105 218 169 0 0 0 0 0 0 0 0 0
Totale 3.481