GRIFFONI, ALESSIO
GRIFFONI, ALESSIO
A Statistical Approach to Microdose Induced Degradation in FinFET Devices
2009 Griffoni, Alessio; Gerardin, Simone; Roussel, Pj; Degraeve, R; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Simoen, E; Claeys, C.
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs
2010 Griffoni, Alessio; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Simoen, E; Claeys, C.
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays
2009 Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, B; DE TEN BROECK, Md; Verbeeck, R; Nackaerts, A.
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs
2010 Griffoni, Alessio; Thijs, S; Russ, C; Tremouilles, D; Linten, D; Scholz, M; Simoen, E; Claeys, C; Meneghesso, Gaudenzio; Groeseneken, G.
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide
2007 Gerardin, Simone; Griffoni, Alessio; Tazzoli, Augusto; Cester, Andrea; Meneghesso, Gaudenzio; Paccagnella, Alessandro
Impact of radiation on the operation and reliability of deep submicron CMOS
2010 C., Claeys; S., Put; Griffoni, Alessio; Cester, Andrea; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; E., Simoen
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs
2008 Griffoni, Alessio; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; E., Simoen; S., Put; C., Claeys