BERTIN, MARCO

BERTIN, MARCO  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 11 di 11 (tempo di esecuzione: 0.015 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 2012 MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEDM 2012, IEEE International Electron Devices Meeting
Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICODE SANTI CARLO + - - The International Conference of Compound Semiconductor Manufacturing Technology CS-MANTECH
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 2013 MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 2013 MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOCIBIN, GIULIAZANONI, ENRICOMENEGHESSO, GAUDENZIO + JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES - -
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 2011 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEEE International Electron Device Meeting (IEDM 2011)
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 2012 MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IWN2012 International Workshop on Nitride Semiconductors
OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown 2014 MENEGHINI, MATTEOCIBIN, GIULIABERTIN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 2012 MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOBISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - ISCS 2012, 39th International Symposium on Compound Semiconductors, CSW
Study of Time-Dependent Degradation of Reverse Biased AlGaN/GaN HEMTs 2012 STOCCO, ANTONIOMENEGHINI, MATTEOBERTIN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Time dependent Degradation of AlGaN/GaN HEMTs 2012 MENEGHESSO, GAUDENZIOZANONI, ENRICOMENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDOBERTIN, MARCORAMPAZZO, FABIANA - - -
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -