ZANON, FRANCO
 Distribuzione geografica
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Continente #
NA - Nord America 1.835
EU - Europa 150
AS - Asia 144
Totale 2.129
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Nazione #
US - Stati Uniti d'America 1.835
CN - Cina 106
UA - Ucraina 35
FI - Finlandia 34
DE - Germania 27
VN - Vietnam 16
TW - Taiwan 15
IT - Italia 13
GB - Regno Unito 12
SE - Svezia 12
RU - Federazione Russa 6
NL - Olanda 5
IN - India 4
AT - Austria 3
BE - Belgio 2
JP - Giappone 2
IE - Irlanda 1
TR - Turchia 1
Totale 2.129
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Città #
Fairfield 239
Woodbridge 234
Ann Arbor 190
Jacksonville 189
Houston 148
Ashburn 144
Seattle 109
Chandler 97
Wilmington 93
Cambridge 85
Beijing 36
Princeton 33
Des Moines 24
Boardman 22
New York 22
San Diego 22
Medford 20
Roxbury 20
Nanjing 17
Dong Ket 16
Hsinchu 15
Guangzhou 14
Helsinki 9
Washington 9
Shenyang 8
Cagliari 6
Changsha 6
Hebei 5
Nanchang 5
Norwalk 5
London 4
Redwood City 4
Jiaxing 3
Jinan 3
Tianjin 3
Brussels 2
Genoa 2
Los Angeles 2
Ludwigsfelde 2
Ogden 2
Tappahannock 2
Vienna 2
Bologna 1
Cincinnati 1
Columbus 1
Dublin 1
Edinburgh 1
Frankfurt am Main 1
Hendon 1
Indiana 1
Islington 1
Kharkiv 1
Kobe 1
Las Vegas 1
Mestre 1
Munich 1
New Bedfont 1
Ningbo 1
Roermond 1
San Francisco 1
Shanghai 1
Shinkocho 1
Treviso 1
Yenibosna 1
Zhengzhou 1
Totale 1.896
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 169
A review of failure modes and mechanisms of GaN-based HEMT's 168
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 155
Anomalous Kink Effect in GaN High Electron Mobility Transistors 142
Reliability aspects of GaN-HEMTs on composite substrates 129
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 119
Thermal storage effects on AlGaN/GaN HEMT 118
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields 111
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 108
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 101
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors 65
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 62
An investigation of reliability on hybrid substrates GaN-HEMTs 62
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 61
Investigation on charge trapping phenomena leading to kink effect on AlGaN/GaN HEMTs 60
Degradation of GaN HEMT at high drain voltages 59
Failure mechanisms of GaN-based transistors in on- and off-state 58
Trap analysis on GaN HEMT after DC accelerated tests 52
Hybrid substrates employment for the development of Gallium Nitride HEMTs: study of reliability and failure modes 52
Light emission in GaN HEMTs: a powerful characterization and reliability tool 51
Trap related instabilities and localized damages induced by reverse bias” 46
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 44
High power performances of GaN HEMT on SopSiC substrate 40
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 35
Breakdown and High electric Fields in GaN-HEMTs on composite substrates 34
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 33
Totale 2.134
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Categoria #
all - tutte 5.990
article - articoli 1.980
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.970
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201995 0 0 0 0 0 0 0 0 0 0 47 48
2019/2020550 65 9 2 150 48 37 30 53 48 56 31 21
2020/2021283 17 21 25 26 14 23 5 36 32 31 26 27
2021/2022255 9 60 34 12 0 9 15 17 0 5 38 56
2022/2023272 38 4 0 31 49 66 1 22 43 1 12 5
2023/2024150 10 13 15 4 11 58 4 26 4 5 0 0
Totale 2.134