ZANONI, ENRICO

ZANONI, ENRICO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 32 (tempo di esecuzione: 0.036 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Chip-Level Degradation of InGaN-Based Optoelectronic Devices 2017 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni - - Solid State Lighting Reliability Part 2: Components to Systems
CMOS latch-up failure mode analysis 1986 ZANONI, ENRICO + - - Reliability Technology Theory and applications
Current collapse associated with surface states in GaN based HEMT's. Theoretical / experimental investigations 2004 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Simulation of Semiconductor Processes and Devices 2004
Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs 2017 Meneghini, M.Meneghesso, G.Zanoni, E. - - Topics in Applied Physics - III-Nitride Based Light Emitting Diodes and Applications
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications 2013 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Topics in Applied Physics III-Nitride Based Light Emitting Diodes and Applications
Elettroni e cristalli 2003 ZANONI, ENRICO - - Cristalli e gemme. Realta' fisica e immaginario. Simbologia, tecniche ed arte. Atti del Convegno di studio promosso dall'Istituto Veneto di Scienze, Lettere ed Arti, Venezia 28, 29 e 30 aprile 1999
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT's by means of InP etch-stop layer 1998 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chapter 1, pp. 21-30, 1999. Presented t 25th International Symposium on Compound Semiconductor, ISCS’98
Elimination of the kink effects in InAlAs/InGaAs InP-based HEMT’s by means of InP etch-stop layer 1999 MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Inst. Phys. Conf. Ser. No. 162 Chap.1
ESD Sensitivity of GaN-Based Electronic Devices 2015 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOZANONI, ENRICO - - Electrostatic Discharge Protection Advances and Applications
Failure mechanisms of GaAs MESFETs and low-noise HEMTs 1990 ZANONI, ENRICO + - - Semiconductor device reliability
GaAs versus Si: materiali, processi, dispositivi elettronici e circuiti integrati 1990 ZANONI, ENRICO + - - Dispositivi a semiconduttore e sistemi a microonde
Hi-power reliability 1987 ZANONI, ENRICO - - Prometheus Prochip White Book
Hot electron induced impact ionization and light emission in GaAs based MESFETs, HEMTs, PM-HEMTs and HBTs 1993 ZANONI, ENRICOPACCAGNELLA, ALESSANDRO + - - Negative Differential Resistance and Instabilities in 2D semiconductors
Hot-electron-induced light emission and impact ionization in GaAs-based devices 1993 NEVIANI, ANDREAZANONI, ENRICO + - - Physical concepts and materials for novel optoelectronic device applications II
Impact ionization effects in advanced Si bipolar transistors 1993 ZANONI, ENRICO + - - Process and device modeling for microelectronics
Impact Ionization in Compound Semiconductor Devices 2001 ZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Handbook of Advanced Electronic and Photonic Materials and Devices
Integrazione ottica 1983 ZANONI, ENRICO + - - Atti del VI corso del Seminario Scientifico Tecnico di Lecce
Latch-up in CMOS integrated circuits 1989 ZANONI, ENRICO + - - Microelectronic reliability
Modi e meccanismi di guasto dei MESFET al GaAs 1987 ZANONI, ENRICO + - - Modi e meccanismi di guasto nei componenti elettronici
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability