BARBATO, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 1.990
AS - Asia 1.076
EU - Europa 814
AF - Africa 278
SA - Sud America 180
OC - Oceania 27
Continente sconosciuto - Info sul continente non disponibili 14
Totale 4.379
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Nazione #
US - Stati Uniti d'America 1.857
SG - Singapore 398
CN - Cina 208
IT - Italia 154
HK - Hong Kong 127
BR - Brasile 107
DE - Germania 92
PL - Polonia 77
FI - Finlandia 54
VN - Vietnam 50
AT - Austria 48
NL - Olanda 42
BJ - Benin 40
GB - Regno Unito 36
RU - Federazione Russa 36
FR - Francia 34
SE - Svezia 34
IN - India 32
JP - Giappone 29
TW - Taiwan 28
BE - Belgio 22
KR - Corea 21
AR - Argentina 19
CI - Costa d'Avorio 19
MX - Messico 17
ES - Italia 16
IE - Irlanda 16
CA - Canada 15
CH - Svizzera 12
CL - Cile 12
SA - Arabia Saudita 12
IQ - Iraq 11
JM - Giamaica 11
PT - Portogallo 11
BB - Barbados 10
CZ - Repubblica Ceca 10
EE - Estonia 10
SN - Senegal 10
ZA - Sudafrica 10
AL - Albania 9
AO - Angola 9
DO - Repubblica Dominicana 9
DZ - Algeria 9
ID - Indonesia 9
IL - Israele 9
LB - Libano 9
MY - Malesia 9
MZ - Mozambico 9
SI - Slovenia 9
TH - Thailandia 9
VE - Venezuela 9
BA - Bosnia-Erzegovina 8
CM - Camerun 8
CO - Colombia 8
CV - Capo Verde 8
EC - Ecuador 8
GM - Gambi 8
GN - Guinea 8
KG - Kirghizistan 8
MA - Marocco 8
MK - Macedonia 8
MU - Mauritius 8
AM - Armenia 7
BG - Bulgaria 7
BO - Bolivia 7
BW - Botswana 7
ET - Etiopia 7
IR - Iran 7
JO - Giordania 7
KE - Kenya 7
NC - Nuova Caledonia 7
NI - Nicaragua 7
PA - Panama 7
UA - Ucraina 7
AU - Australia 6
CR - Costa Rica 6
CW - ???statistics.table.value.countryCode.CW??? 6
GT - Guatemala 6
HT - Haiti 6
HU - Ungheria 6
KH - Cambogia 6
LU - Lussemburgo 6
NG - Nigeria 6
PK - Pakistan 6
RE - Reunion 6
SD - Sudan 6
SO - Somalia 6
TN - Tunisia 6
TR - Turchia 6
XK - ???statistics.table.value.countryCode.XK??? 6
AD - Andorra 5
AE - Emirati Arabi Uniti 5
BD - Bangladesh 5
CD - Congo 5
CY - Cipro 5
EG - Egitto 5
GH - Ghana 5
GR - Grecia 5
IS - Islanda 5
LC - Santa Lucia 5
Totale 4.173
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Città #
Ashburn 236
Singapore 212
Fairfield 202
Woodbridge 152
Chandler 149
Hong Kong 118
Santa Clara 102
Ann Arbor 86
Beijing 77
Seattle 75
Houston 74
Cambridge 70
Bytom 61
Wilmington 53
Boardman 52
New York 50
Cotonou 39
Medford 34
Munich 34
Princeton 34
Helsinki 31
Des Moines 29
Padova 28
Los Angeles 25
Vienna 25
Roxbury 21
San Diego 19
Abidjan 17
Nanjing 16
Buffalo 13
Dublin 13
São Paulo 13
Turku 13
Hanoi 12
Ho Chi Minh City 12
Villach 12
Warsaw 12
Amsterdam 10
Hefei 10
Hsinchu 10
Bridgetown 9
Council Bluffs 9
Hwaseong-si 9
Luanda 9
Manchester 9
Bishkek 8
Chicago 8
Conakry 8
Denver 8
Guangzhou 8
Seoul 8
Tallinn 8
Amman 7
Bangkok 7
Brussels 7
Dakar 7
Gaborone 7
Kingston 7
Managua 7
Maputo 7
Noumea 7
Panama City 7
Riyadh 7
Barcelona 6
Basel 6
Cagliari 6
Chennai 6
Dresden 6
Falkenstein 6
Kuala Lumpur 6
London 6
Milan 6
Nairobi 6
Nanchang 6
Nuremberg 6
Phnom Penh 6
Pristina 6
Stuttgart 6
Tokyo 6
Andorra la Vella 5
Bengaluru 5
Boston 5
Casablanca 5
Castries 5
Guatemala City 5
Johannesburg 5
Lisbon 5
Ljubljana 5
Papeete 5
San Fernando 5
Skopje 5
Stockholm 5
Ulan Bator 5
Washington 5
Willemstad 5
Accra 4
Adelaide 4
Apia 4
Cairo 4
Dallas 4
Totale 2.625
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Nome #
Reliability and dynamic properties of GaN devices 240
Degradation physics of GaN-based lateral and vertical devices 204
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 176
Evidence of mechanical degradation in microelectromechanical switches subjected to long-Term stresses 173
E-REGULUS: development of a 150 W prototype of magnetically enhanced plasma thruster 170
Reliability and failure analysis in power GaN-HEMTs: An overview 166
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 152
Reverse bias degradation of metal wrap through silicon solar cells 148
Fast System to measure the dynamic onresistance of on-wafer 600 v normally off GaN HEMTs in hard-switching application conditions 147
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 145
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 136
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 135
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells 133
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 133
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 133
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 132
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 132
REGULUS: Iodine Fed Plasma Propulsion System for Small Satellites 126
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 125
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 125
Potential induced degradation in high-efficiency bifacial solar cells 118
A case study of a motorised flexible IOD platform: the UNISAT-7 and REGULUS mission 116
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 113
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 111
Recent Advancements in Power GaN Reliability 107
Gallium Nitride power devices: challenges and perspectives 106
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 105
Novel high-voltage double-pulsed system for GaN-based power HEMTs 100
Challenges towards highly reliable GaN power transistors 99
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials 95
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 86
On Wafer Application Testing for 600 V E-mode GaN HEMTs in Boost Regime 86
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 85
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 69
Totale 4.427
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Categoria #
all - tutte 13.523
article - articoli 3.629
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.152
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021225 0 0 0 0 0 8 47 55 39 29 28 19
2021/2022340 10 53 29 33 11 7 6 39 12 11 13 116
2022/2023363 55 14 12 37 86 45 2 27 43 14 14 14
2023/2024306 28 27 45 22 15 70 10 9 6 11 22 41
2024/2025972 10 44 31 50 127 48 35 122 55 32 166 252
2025/20261.594 187 225 354 438 327 63 0 0 0 0 0 0
Totale 4.427