BARBATO, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 1.340
EU - Europa 272
AS - Asia 134
SA - Sud America 3
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 1.753
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Nazione #
US - Stati Uniti d'America 1.339
IT - Italia 111
CN - Cina 76
FI - Finlandia 29
SE - Svezia 28
AT - Austria 23
DE - Germania 23
TW - Taiwan 17
GB - Regno Unito 14
IN - India 14
KR - Corea 12
IE - Irlanda 11
JP - Giappone 10
NL - Olanda 9
BE - Belgio 7
CH - Svizzera 7
CL - Cile 3
HK - Hong Kong 3
UA - Ucraina 3
A2 - ???statistics.table.value.countryCode.A2??? 2
FR - Francia 2
AU - Australia 1
CA - Canada 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
NZ - Nuova Zelanda 1
PL - Polonia 1
RO - Romania 1
RU - Federazione Russa 1
SI - Slovenia 1
Totale 1.753
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Città #
Fairfield 202
Woodbridge 152
Chandler 149
Ashburn 123
Ann Arbor 86
Seattle 74
Houston 73
Cambridge 70
Wilmington 52
New York 36
Medford 34
Princeton 34
Des Moines 29
Beijing 27
Helsinki 22
Roxbury 21
San Diego 19
Boardman 18
Nanjing 16
Padova 16
Villach 12
Dublin 11
Hsinchu 10
Hwaseong-si 9
Vienna 8
Basel 6
Cagliari 6
Dresden 6
Nanchang 6
Manchester 5
Washington 5
Delft 4
Guangzhou 4
Hefei 4
Kobe 4
Patna 4
Ranchi 4
Stuttgart 4
Bengaluru 3
Bologna 3
Bury St Edmunds 3
Ferrara 3
Jiaxing 3
London 3
Santiago 3
Shenyang 3
Taoyuan District 3
Trento 3
Brussels 2
Central 2
Chicago 2
Genk 2
Jinan 2
Kanpur 2
Leuven 2
Modling 2
Munich 2
Norwalk 2
Okamoto 2
Reading 2
Roermond 2
Treviso 2
Zhubei 2
Amsterdam 1
Baghdad 1
Borås 1
Budapest 1
Campodarsego 1
Caulonia 1
Changsha 1
Cologne 1
Draveil 1
Fuzhou 1
Gothenburg 1
Haifa 1
Hamilton 1
Hangzhou 1
Hebei 1
Herent 1
Ipswich 1
Kharkiv 1
Kunming 1
Laurel 1
Liestal 1
Milan 1
Ningbo 1
Orange 1
Quzhou 1
Redmond 1
Ronco Scrivia 1
Rosental 1
Seoul 1
St Petersburg 1
Taipei 1
Targu 1
Warsaw 1
Wuhan 1
Xian 1
Totale 1.460
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Nome #
Degradation physics of GaN-based lateral and vertical devices 109
Reliability and dynamic properties of GaN devices 98
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 94
Reverse bias degradation of metal wrap through silicon solar cells 93
Reliability and failure analysis in power GaN-HEMTs: An overview 91
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 80
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells 79
Evidence of mechanical degradation in microelectromechanical switches subjected to long-Term stresses 79
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 66
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 66
Potential induced degradation in high-efficiency bifacial solar cells 59
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 57
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 55
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 54
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 52
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 50
Gallium Nitride power devices: challenges and perspectives 45
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 45
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials 44
Novel high-voltage double-pulsed system for GaN-based power HEMTs 43
REGULUS: Iodine Fed Plasma Propulsion System for Small Satellites 41
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 40
Fast System to measure the dynamic onresistance of on-wafer 600 v normally off GaN HEMTs in hard-switching application conditions 40
Recent Advancements in Power GaN Reliability 39
E-REGULUS: development of a 150 W prototype of magnetically enhanced plasma thruster 39
Challenges towards highly reliable GaN power transistors 38
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 36
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 27
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 27
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 26
On Wafer Application Testing for 600 V E-mode GaN HEMTs in Boost Regime 25
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 25
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 18
A case study of a motorised flexible IOD platform: the UNISAT-7 and REGULUS mission 18
Totale 1.798
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Categoria #
all - tutte 6.226
article - articoli 1.883
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.109
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201967 0 0 0 0 0 0 0 0 0 21 26 20
2019/2020331 31 9 2 14 26 19 27 46 55 70 20 12
2020/2021300 38 14 14 7 2 8 47 55 39 29 28 19
2021/2022340 10 53 29 33 11 7 6 39 12 11 13 116
2022/2023363 55 14 12 37 86 45 2 27 43 14 14 14
2023/2024243 28 27 45 22 15 70 10 9 6 11 0 0
Totale 1.798