BARBATO, ALESSANDRO

BARBATO, ALESSANDRO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells 2015 BARBATO, MARCOMENEGHINI, MATTEOCESTER, ANDREABARBATO, ALESSANDROZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - Proceedings of International Reliability Physics Symposium
Novel high-voltage double-pulsed system for GaN-based power HEMTs 2015 STOCCO, ANTONIOBISI, DAVIDEBARBATO, ALESSANDROMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Proc. GE 2015 Annual Meeting
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 2016 BARBATO, ALESSANDROROSSETTO, ISABELLABARBATO, MARCOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials 2016 BARBATO, MARCOMENEGHINI, MATTEOBARBATO, ALESSANDROMENEGHESSO, GAUDENZIO + - - Proc. of the PVSEC2016, 32th European Photovoltaic Solar Energy Conference and Exhibition Conference
Potential induced degradation in high-efficiency bifacial solar cells 2016 BARBATO, MARCOMENEGHINI, MATTEOCESTER, ANDREABARBATO, ALESSANDROMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
Reverse bias degradation of metal wrap through silicon solar cells 2016 BARBATO, MARCOBARBATO, ALESSANDROMENEGHINI, MATTEOCESTER, ANDREAMENEGHESSO, GAUDENZIO + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiFabiana RampazzoIsabella RossettoMaria RuzzarinNicola TrivellinGaudenzio MeneghessoMatteo Meneghini + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 2017 Maria RuzzarinAlessandro BarbatoMatteo MeneghiniIsabella RossettoGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Evidence of mechanical degradation in microelectromechanical switches subjected to long-Term stresses 2017 BARBATO, MARCOBARBATO, ALESSANDROSilvestrini, MatteoCESTER, ANDREAMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 2017 MENEGHINI, MATTEOBARBATO, ALESSANDROROSSETTO, ISABELLAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiIsabella RossettoMaria RuzzarinNicola TrivellinAlessandro ChiniGaudenzio MeneghessoMatteo Meneghini - - Proceedings of the 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017)
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 2017 Alessandro BarbatoM. BarbatoM. MeneghiniM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 2017 Barbato, M.Barbato, A.Meneghini, M.Meneghesso, G. + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 2018 M. RuzzarinM. MeneghiniA. BarbatoPADOVAN, VALERIAG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0
On Wafer Application Testing for 600 V E-mode GaN HEMTs in Boost Regime 2018 A. BarbatoM. BarbatoM. MeneghiniG. SpiazziG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0