BARBATO, ALESSANDRO

BARBATO, ALESSANDRO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 34 (tempo di esecuzione: 0.027 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A case study of a motorised flexible IOD platform: the UNISAT-7 and REGULUS mission 2021 N BellomoF TrezzolaniM ManenteA BarbatoM MagarottoR MantellatoL CappelliniA SelmoM MinuteM DuzziD Pavarin + - - Proceedings of the 72nd International Astronautical Congress (IAC)
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 2016 BARBATO, ALESSANDROROSSETTO, ISABELLABARBATO, MARCOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 2017 Alessandro BarbatoM. BarbatoM. MeneghiniM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 2020 Masin, F.Meneghini, M.Canato, E.Barbato, A.De Santi, C.Zanoni, E.Meneghesso, G. + - - IEEE International Reliability Physics Symposium Proceedings
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials 2016 BARBATO, MARCOMENEGHINI, MATTEOBARBATO, ALESSANDROMENEGHESSO, GAUDENZIO + - - Proc. of the PVSEC2016, 32th European Photovoltaic Solar Energy Conference and Exhibition Conference
E-REGULUS: development of a 150 W prototype of magnetically enhanced plasma thruster 2021 Matteo DuzziMarco ManenteFabio TrezzolaniNicolas BellomoAlessandro BarbatoLorenzo CappelliniMarco MinuteRiccardo MantellatoMirko MagarottoDavide ScalziAntonio SelmoDaniele Pavarin + - - Proceedings of the 72nd International Astronautical Congress (IAC)
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Evidence of mechanical degradation in microelectromechanical switches subjected to long-Term stresses 2017 BARBATO, MARCOBARBATO, ALESSANDROSilvestrini, MatteoCESTER, ANDREAMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
Fast System to measure the dynamic onresistance of on-wafer 600 v normally off GaN HEMTs in hard-switching application conditions 2020 Barbato A.Barbato M.Meneghini M.Spiazzi G.Meneghesso G.Zanoni E. + IET POWER ELECTRONICS - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 2020 Nardo A.Meneghini M.Barbato A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Novel high-voltage double-pulsed system for GaN-based power HEMTs 2015 STOCCO, ANTONIOBISI, DAVIDEBARBATO, ALESSANDROMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Proc. GE 2015 Annual Meeting
On Wafer Application Testing for 600 V E-mode GaN HEMTs in Boost Regime 2018 A. BarbatoM. BarbatoM. MeneghiniG. SpiazziG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0
Potential induced degradation in high-efficiency bifacial solar cells 2016 BARBATO, MARCOMENEGHINI, MATTEOCESTER, ANDREABARBATO, ALESSANDROMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 2017 Barbato, M.Barbato, A.Meneghini, M.Meneghesso, G. + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 2019 Meneghini, M.Barbato, A.Borga, M.De Santi, C.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + - TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING Technical Digest - International Electron Devices Meeting, IEDM