ROCCATO, NICOLA

ROCCATO, NICOLA  

Università di Padova  

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Risultati 1 - 12 di 12 (tempo di esecuzione: 0.018 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 2021 Roccato N.Piva F.Santi C. D.Mukherjee K.Buffolo M.Verzellesi G.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 2021 Roccato N.Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 2022 Buffolo M.Caria A.Piva F.Roccato N.Casu C.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 2022 Buffolo, MRoccato, NPiva, FDe Santi, CCasu, CCaria, AMukherjee, KMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI
UV LED reliability: degradation mechanisms and challenges 2022 Meneghini, MPiva, FDe Santi, CTrivellin, NBuffolo, MRoccato, NFiorimonte, DMeneghesso, GZanoni, E + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 2022 Roccato, NPiva, FDe Santi, CBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs: a nonequilibrium Green’s function study 2022 C. CasuN. RoccatoC. De SantiM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 2022 M. BuffoloN. RoccatoFrancesco PivaCarlo De SantiG. VerzellesiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 2022 F. PivaN. RoccatoM. BuffoloC. De SantiM. PilatiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress 2022 F. PivaM. BuffoloC. De SantiN. RoccatoG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of E-MRS fall 2022
III-N optoelectronics: defects, reliability and challenges 2022 M. MeneghiniC. De SantiM. BuffoloA. CariaF. PivaC. CasuN. RoccatoN. TrivellinG. MeneghessoE. Zanoni + - - Proceedings of ICOOPMA-EuroDIM 2022
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current 2022 M. BuffoloN. RoccatoF. PivaC. De SantiN. GrandjeanG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of E-MRS fall 2022