STOFFELS, STEVE

STOFFELS, STEVE  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 7 di 7 (tempo di esecuzione: 0.023 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 2017 Rossetto, I.Meneghini, M.Canato, E.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 2018 Borga, M.Meneghini, M.Stoffels, S.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 2018 Stoffels, S.Borga, M.Zanoni, E.Meneghesso, G.Meneghini, M. + MRS COMMUNICATIONS - -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 2019 Stoffels S.SANGIORGI, ENRICOBorga M.Fabris E.Meneghini M.Zanoni E.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 2019 Meneghini, M.Barbato, A.Borga, M.De Santi, C.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + - TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING Technical Digest - International Electron Devices Meeting, IEDM