CANATO, ELEONORA

CANATO, ELEONORA  

Università di Padova  

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Risultati 1 - 20 di 22 (tempo di esecuzione: 0.036 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 2019 Borga M.Meneghini M.Canato E.Medjdoub F.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 2020 Masin, F.Meneghini, M.Canato, E.Barbato, A.De Santi, C.Zanoni, E.Meneghesso, G. + - - IEEE International Reliability Physics Symposium Proceedings
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 2017 Rossetto, I.Meneghini, M.Canato, E.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 2017 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLACANATO, ELEONORADE SANTI, CARLOTRIVELLIN, NICOLAZANONI, ENRICO + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal 2021 Canato E.Meneghini M.Meneghesso G. + APPLIED PHYSICS EXPRESS - -
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 2020 Canato E.Meneghini M.De Santi C.Masin F.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 2018 CANATO, ELEONORATajalli, A.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 2019 MASIN, FABRIZIOMeneghini M.Canato E.De Santi C.Zanoni E.Meneghesso G. + APPLIED PHYSICS LETTERS - -
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 2019 Canato E.Masin F.Borga M.Zanoni E.Meneghini M.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)