BORGA, MATTEO

BORGA, MATTEO  

Università di Padova  

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Risultati 1 - 20 di 32 (tempo di esecuzione: 0.048 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 2017 M. BorgaM. MeneghiniI. RossettoM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate 2018 M. BorgaM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 2018 Stoffels, S.Borga, M.Zanoni, E.Meneghesso, G.Meneghini, M. + MRS COMMUNICATIONS - -
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
The 2018 GaN power electronics roadmap 2018 AMANO, HIROSHIBORGA, MATTEOGEURTS, CHARLES - MICHEL LOUIS - MARIE GHISLAINDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoTrivellin, NicolaZanoni, Enrico + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs 2018 Borga, MatteoMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 2018 Borga, M.Meneghini, M.Stoffels, S.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 2019 Kalparupa MukherjeeMatteo BorgaMaria RuzzarinGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 2019 E. FabrisM. MeneghiniC. De SantiM. BorgaG. MeneghessoE. Zanoni + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current 2019 M. BorgaM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 2019 Borga M.Meneghini M.Canato E.Medjdoub F.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 2019 FABRIS, ELENAMeneghini, MatteoDe Santi, CarloBorga, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -