BORGA, MATTEO

BORGA, MATTEO  

Università di Padova  

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Risultati 1 - 20 di 34 (tempo di esecuzione: 0.024 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate 2018 M. BorgaM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 Mukherjee K.Borga M.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 2019 Borga M.Meneghini M.Canato E.Medjdoub F.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 2017 M. BorgaM. MeneghiniI. RossettoM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Characterization and modeling of GaN-based transistors for power applications 2019 Borga, Matteo - - -
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 2020 Mukherjee, KalparupaDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, MatteoBorga, Matteo + - - IEEE International Reliability Physics Symposium Proceedings
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 2018 Stoffels, S.Borga, M.Zanoni, E.Meneghesso, G.Meneghini, M. + MRS COMMUNICATIONS - -
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current 2019 M. BorgaM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 2019 Ruzzarin M.Borga M.Zanoni E.Meneghini M.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 2019 Fabris E.Meneghini M.De Santi C.Borga M.Meneghesso G.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 2019 FABRIS, ELENAMeneghini, MatteoDe Santi, CarloBorga, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 2019 E. FabrisM. MeneghiniC. De SantiM. BorgaG. MeneghessoE. Zanoni + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs 2018 Borga, MatteoMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -