BARBATO, ALESSANDRO

BARBATO, ALESSANDRO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 8 di 8 (tempo di esecuzione: 0.019 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Fast System to measure the dynamic onresistance of on-wafer 600 v normally off GaN HEMTs in hard-switching application conditions 2020 Barbato A.Barbato M.Meneghini M.Spiazzi G.Meneghesso G.Zanoni E. + IET POWER ELECTRONICS - -
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 2020 Nardo A.Meneghini M.Barbato A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 2017 Barbato, M.Barbato, A.Meneghini, M.Meneghesso, G. + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
Reverse bias degradation of metal wrap through silicon solar cells 2016 BARBATO, MARCOBARBATO, ALESSANDROMENEGHINI, MATTEOCESTER, ANDREAMENEGHESSO, GAUDENZIO + SOLAR ENERGY MATERIALS AND SOLAR CELLS - -
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 2017 MENEGHINI, MATTEOBARBATO, ALESSANDROROSSETTO, ISABELLAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 2020 Nardo A.Meneghini M.Barbato A.De Santi C.Meneghesso G.Zanoni E. + APPLIED PHYSICS EXPRESS - -