RONCHI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 1.772
AS - Asia 617
EU - Europa 404
AF - Africa 139
SA - Sud America 84
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 7
Totale 3.035
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Nazione #
US - Stati Uniti d'America 1.704
SG - Singapore 202
CN - Cina 149
HK - Hong Kong 82
DE - Germania 61
PL - Polonia 54
FI - Finlandia 46
BR - Brasile 42
IN - India 31
UA - Ucraina 31
VN - Vietnam 27
SE - Svezia 20
IT - Italia 19
FR - Francia 18
RU - Federazione Russa 17
NL - Olanda 13
GB - Regno Unito 12
IE - Irlanda 12
ES - Italia 9
GF - Guiana Francese 9
AR - Argentina 8
CG - Congo 8
JP - Giappone 8
KR - Corea 8
MD - Moldavia 8
PE - Perù 8
TW - Taiwan 8
AO - Angola 7
BE - Belgio 7
IQ - Iraq 7
PA - Panama 7
AE - Emirati Arabi Uniti 6
AT - Austria 6
CO - Colombia 6
DJ - Gibuti 6
ET - Etiopia 6
PS - Palestinian Territory 6
TR - Turchia 6
ZW - Zimbabwe 6
BD - Bangladesh 5
BF - Burkina Faso 5
CA - Canada 5
CI - Costa d'Avorio 5
CR - Costa Rica 5
IS - Islanda 5
KE - Kenya 5
KG - Kirghizistan 5
KH - Cambogia 5
LC - Santa Lucia 5
ME - Montenegro 5
MX - Messico 5
NO - Norvegia 5
NP - Nepal 5
RS - Serbia 5
SI - Slovenia 5
TN - Tunisia 5
TT - Trinidad e Tobago 5
ZA - Sudafrica 5
AD - Andorra 4
AL - Albania 4
AM - Armenia 4
AU - Australia 4
BJ - Benin 4
BY - Bielorussia 4
CU - Cuba 4
CW - ???statistics.table.value.countryCode.CW??? 4
CY - Cipro 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GA - Gabon 4
GE - Georgia 4
GM - Gambi 4
HN - Honduras 4
LY - Libia 4
MG - Madagascar 4
MR - Mauritania 4
MW - Malawi 4
MZ - Mozambico 4
PH - Filippine 4
SD - Sudan 4
TJ - Tagikistan 4
TL - Timor Orientale 4
TZ - Tanzania 4
UY - Uruguay 4
BA - Bosnia-Erzegovina 3
BB - Barbados 3
BW - Botswana 3
CH - Svizzera 3
CV - Capo Verde 3
DO - Repubblica Dominicana 3
GP - Guadalupe 3
GR - Grecia 3
HR - Croazia 3
ID - Indonesia 3
IR - Iran 3
JO - Giordania 3
LA - Repubblica Popolare Democratica del Laos 3
LB - Libano 3
LU - Lussemburgo 3
MU - Mauritius 3
Totale 2.937
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Città #
Woodbridge 224
Fairfield 187
Jacksonville 173
Houston 146
Singapore 114
Ashburn 103
Santa Clara 96
Chandler 95
Ann Arbor 82
Wilmington 81
Seattle 76
Hong Kong 73
Beijing 59
Cambridge 54
Bytom 49
Boardman 42
Princeton 31
Medford 23
Nanjing 22
Munich 21
Helsinki 16
Dong Ket 15
Bengaluru 13
San Diego 13
Des Moines 12
Dublin 10
Los Angeles 10
Roxbury 10
Shenyang 10
New York 9
Norwalk 8
Cayenne 7
Chicago 7
Brooklyn 6
Cagliari 6
Council Bluffs 6
Harare 6
Ho Chi Minh City 6
Luanda 6
Panama City 6
Addis Ababa 5
Brazzaville 5
Brussels 5
Castries 5
Chisinau 5
Dallas 5
Hebei 5
Hsinchu 5
Lima 5
Nanchang 5
Podgorica 5
São Paulo 5
Vienna 5
Andorra la Vella 4
Bishkek 4
Charlotte 4
Dar es Salaam 4
Dili 4
Espoo 4
Hanoi 4
Jiaxing 4
Libreville 4
London 4
Minsk 4
Nairobi 4
Newark 4
Nouakchott 4
Reykjavik 4
Roermond 4
San José 4
Tbilisi 4
Warsaw 4
Washington 4
Abidjan 3
Amman 3
Amsterdam 3
Antananarivo 3
Auckland 3
Belgrade 3
Bovolenta 3
Cape Town 3
Changsha 3
Corrientes 3
Cotonou 3
Djibouti 3
Dushanbe 3
Havana 3
Kathmandu 3
Khartoum 3
Lilongwe 3
Luxembourg 3
Melbourne 3
Montevideo 3
Phnom Penh 3
Praia 3
Saarbrücken 3
San Francisco 3
Tianjin 3
Tirana 3
Tokyo 3
Totale 2.159
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Nome #
Reliability aspects of GaN-HEMTs on composite substrates 188
Reliability issues of Gallium Nitride High Electron Mobility Transistors 181
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 172
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 159
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 156
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 151
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 145
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 125
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 124
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 124
An investigation of reliability on hybrid substrates GaN-HEMTs 116
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 107
GaN Hemt Degradation induced by Reverse Gate Bias Stress 104
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 102
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 97
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 96
High Robustness GaN HEMT Subject to Reverse Bias Stress 94
New reliability understanding on GaN-HEMTs 93
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 91
An investigation of defects and reliability issues on Gallium Nitride devices 91
Trap analysis on GaN HEMT after DC accelerated tests 85
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 79
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 76
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 75
Trap related instabilities and localized damages induced by reverse bias” 72
Latest reliability results in GaN HEMTs devices 68
Reverse gate bias stress induced degradation of GaN HEMT 66
Totale 3.037
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Categoria #
all - tutte 9.654
article - articoli 1.845
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.499
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021205 0 0 0 20 16 23 9 24 35 22 30 26
2021/2022225 10 52 24 7 3 10 11 14 7 6 38 43
2022/2023260 45 3 1 34 51 46 0 20 44 0 7 9
2023/2024110 14 14 10 4 7 17 3 13 2 0 11 15
2024/2025593 0 19 15 52 103 54 14 52 31 15 113 125
2025/2026654 68 196 229 161 0 0 0 0 0 0 0 0
Totale 3.037