RONCHI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 1.457
AS - Asia 182
EU - Europa 168
SA - Sud America 1
Totale 1.808
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Nazione #
US - Stati Uniti d'America 1.454
CN - Cina 107
DE - Germania 41
FI - Finlandia 38
SG - Singapore 32
UA - Ucraina 28
SE - Svezia 15
VN - Vietnam 15
IN - India 13
IT - Italia 11
GB - Regno Unito 8
IE - Irlanda 7
NL - Olanda 7
TW - Taiwan 7
RU - Federazione Russa 6
AT - Austria 3
CA - Canada 3
FR - Francia 3
HK - Hong Kong 3
JP - Giappone 2
KR - Corea 2
BR - Brasile 1
CH - Svizzera 1
TR - Turchia 1
Totale 1.808
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Città #
Woodbridge 224
Fairfield 187
Jacksonville 173
Houston 146
Chandler 95
Ashburn 92
Wilmington 81
Ann Arbor 80
Seattle 75
Cambridge 54
Beijing 43
Princeton 31
Medford 23
Nanjing 22
Singapore 22
Boardman 15
Dong Ket 15
San Diego 13
Des Moines 12
Helsinki 12
Roxbury 10
Shenyang 10
Norwalk 8
Dublin 7
Cagliari 6
Hebei 5
Hsinchu 5
Munich 5
Nanchang 5
New York 5
Jiaxing 4
Roermond 4
Santa Clara 4
Washington 4
Bovolenta 3
Changsha 3
Saarbrücken 3
Tianjin 3
Dallas 2
Haikou 2
Jinan 2
Kaohsiung City 2
Laudenbach 2
London 2
Ludwigsfelde 2
Mumbai 2
Osan 2
Tappahannock 2
Vienna 2
Zhengzhou 2
Bordeaux 1
Borås 1
Denver 1
Edinburgh 1
Falls Church 1
Ferrara 1
Fuzhou 1
Guangzhou 1
Kharkiv 1
Kilburn 1
Kobe 1
Kumar 1
Las Vegas 1
Lausanne 1
Ningbo 1
Ogden 1
Padova 1
Pune 1
San Francisco 1
Shinkocho 1
São Paulo 1
Toronto 1
Yenibosna 1
Totale 1.556
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Nome #
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 132
Reliability aspects of GaN-HEMTs on composite substrates 130
Reliability issues of Gallium Nitride High Electron Mobility Transistors 128
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 120
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 102
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 94
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 92
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 80
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 77
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 73
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 70
An investigation of reliability on hybrid substrates GaN-HEMTs 62
GaN Hemt Degradation induced by Reverse Gate Bias Stress 58
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 57
Trap analysis on GaN HEMT after DC accelerated tests 54
High Robustness GaN HEMT Subject to Reverse Bias Stress 53
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 48
Trap related instabilities and localized damages induced by reverse bias” 47
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 46
New reliability understanding on GaN-HEMTs 44
Reverse gate bias stress induced degradation of GaN HEMT 40
An investigation of defects and reliability issues on Gallium Nitride devices 40
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 39
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 38
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 36
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 30
Latest reliability results in GaN HEMTs devices 20
Totale 1.810
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Categoria #
all - tutte 6.085
article - articoli 1.276
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.361
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020378 0 0 0 69 37 34 29 43 45 52 43 26
2020/2021240 8 23 4 20 16 23 9 24 35 22 30 26
2021/2022225 10 52 24 7 3 10 11 14 7 6 38 43
2022/2023260 45 3 1 34 51 46 0 20 44 0 7 9
2023/2024110 14 14 10 4 7 17 3 13 2 0 11 15
2024/202520 0 19 1 0 0 0 0 0 0 0 0 0
Totale 1.810