RONCHI, NICOLO'
 Distribuzione geografica
Continente #
NA - Nord America 1.868
AS - Asia 827
EU - Europa 432
AF - Africa 151
SA - Sud America 111
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 7
Totale 3.408
Nazione #
US - Stati Uniti d'America 1.790
SG - Singapore 314
CN - Cina 194
HK - Hong Kong 84
DE - Germania 62
VN - Vietnam 58
PL - Polonia 55
BR - Brasile 54
FI - Finlandia 46
IN - India 32
UA - Ucraina 32
IT - Italia 25
FR - Francia 21
SE - Svezia 21
RU - Federazione Russa 18
AR - Argentina 15
GB - Regno Unito 14
IE - Irlanda 13
NL - Olanda 13
ES - Italia 12
JP - Giappone 11
CO - Colombia 10
GF - Guiana Francese 10
CG - Congo 9
KR - Corea 9
PE - Perù 9
KG - Kirghizistan 8
MD - Moldavia 8
MX - Messico 8
TW - Taiwan 8
ZW - Zimbabwe 8
AE - Emirati Arabi Uniti 7
AO - Angola 7
BE - Belgio 7
CA - Canada 7
DJ - Gibuti 7
ET - Etiopia 7
IQ - Iraq 7
NP - Nepal 7
PA - Panama 7
PS - Palestinian Territory 7
AT - Austria 6
CR - Costa Rica 6
KH - Cambogia 6
RS - Serbia 6
TR - Turchia 6
AL - Albania 5
BD - Bangladesh 5
BF - Burkina Faso 5
BY - Bielorussia 5
CI - Costa d'Avorio 5
IS - Islanda 5
KE - Kenya 5
LC - Santa Lucia 5
ME - Montenegro 5
NO - Norvegia 5
SI - Slovenia 5
TN - Tunisia 5
TT - Trinidad e Tobago 5
ZA - Sudafrica 5
AD - Andorra 4
AM - Armenia 4
AU - Australia 4
BB - Barbados 4
BJ - Benin 4
CU - Cuba 4
CV - Capo Verde 4
CW - ???statistics.table.value.countryCode.CW??? 4
CY - Cipro 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GA - Gabon 4
GE - Georgia 4
GH - Ghana 4
GM - Gambi 4
HN - Honduras 4
ID - Indonesia 4
IR - Iran 4
LU - Lussemburgo 4
LY - Libia 4
MG - Madagascar 4
MR - Mauritania 4
MW - Malawi 4
MZ - Mozambico 4
PH - Filippine 4
SD - Sudan 4
TJ - Tagikistan 4
TL - Timor Orientale 4
TZ - Tanzania 4
UY - Uruguay 4
AF - Afghanistan, Repubblica islamica di 3
BA - Bosnia-Erzegovina 3
BW - Botswana 3
CD - Congo 3
CH - Svizzera 3
CL - Cile 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GP - Guadalupe 3
GR - Grecia 3
Totale 3.291
Città #
Woodbridge 224
Fairfield 187
Jacksonville 173
Ashburn 152
Houston 146
Singapore 134
Santa Clara 96
Chandler 95
Ann Arbor 82
Wilmington 81
Beijing 77
Seattle 76
Hong Kong 74
Cambridge 54
Bytom 49
Boardman 42
Princeton 31
Medford 23
Nanjing 22
Munich 21
Ho Chi Minh City 19
Helsinki 16
Dong Ket 15
New York 15
Los Angeles 14
Bengaluru 13
San Diego 13
Des Moines 12
Hanoi 12
Dublin 11
Roxbury 10
Shenyang 10
Cayenne 8
Chicago 8
Norwalk 8
Bishkek 7
Brooklyn 7
Harare 7
Addis Ababa 6
Brazzaville 6
Cagliari 6
Council Bluffs 6
Lima 6
Luanda 6
Panama City 6
São Paulo 6
Tokyo 6
Brussels 5
Castries 5
Charlotte 5
Chisinau 5
Dallas 5
Hebei 5
Hsinchu 5
Nanchang 5
Podgorica 5
Vienna 5
Warsaw 5
Accra 4
Andorra la Vella 4
Belgrade 4
Dar es Salaam 4
Denver 4
Dili 4
Djibouti 4
Espoo 4
Jiaxing 4
Kathmandu 4
Libreville 4
London 4
Luxembourg 4
Minsk 4
Nairobi 4
Newark 4
Nouakchott 4
Phnom Penh 4
Praia 4
Reykjavik 4
Roermond 4
San José 4
Tbilisi 4
Washington 4
Abidjan 3
Amman 3
Amsterdam 3
Antananarivo 3
Auckland 3
Bovolenta 3
Bridgetown 3
Cape Town 3
Changsha 3
Corrientes 3
Cotonou 3
Dushanbe 3
Haiphong 3
Havana 3
Khartoum 3
Lilongwe 3
Melbourne 3
Montevideo 3
Totale 2.303
Nome #
Reliability aspects of GaN-HEMTs on composite substrates 203
Reliability issues of Gallium Nitride High Electron Mobility Transistors 190
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 182
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 173
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 169
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 165
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 162
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 144
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 138
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 134
An investigation of reliability on hybrid substrates GaN-HEMTs 132
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 123
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 116
GaN Hemt Degradation induced by Reverse Gate Bias Stress 116
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 115
New reliability understanding on GaN-HEMTs 111
High Robustness GaN HEMT Subject to Reverse Bias Stress 108
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 107
An investigation of defects and reliability issues on Gallium Nitride devices 106
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 104
Trap analysis on GaN HEMT after DC accelerated tests 102
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 96
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 90
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 87
Trap related instabilities and localized damages induced by reverse bias” 86
Latest reliability results in GaN HEMTs devices 78
Reverse gate bias stress induced degradation of GaN HEMT 73
Totale 3.410
Categoria #
all - tutte 10.331
article - articoli 1.935
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.266


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021169 0 0 0 0 0 23 9 24 35 22 30 26
2021/2022225 10 52 24 7 3 10 11 14 7 6 38 43
2022/2023260 45 3 1 34 51 46 0 20 44 0 7 9
2023/2024110 14 14 10 4 7 17 3 13 2 0 11 15
2024/2025593 0 19 15 52 103 54 14 52 31 15 113 125
2025/20261.027 68 196 229 242 275 17 0 0 0 0 0 0
Totale 3.410