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Mostrati risultati da 21 a 28 di 28

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Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron

2017 Stockman, Arno; Uren, Michael; Tajalli, Alaleh; Meneghini, Matteo; Bakeroot, Benoit; Moens, Peter

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs

2017 Tajalli, Alaleh; Meneghini, Matteo; Rossetto, Isabella; Moens, Peter; Banerjee, Abhishek; Zanoni, Enrico; Meneghesso, Gaudenzio

GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift

2017 Dalcanale, Stefano; Meneghini, Matteo; Tajalli, Alaleh; Rossetto, Isabella; Ruzzarin, Maria; Zanoni, Enrico; Meneghesso, Gaudenzio; Moens, Peter; Banerjee, Abhishek; Vandeweghe, Steven

Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs

2017 Rossetto, I.; Meneghini, M.; Tajalli, A.; Dalcanale, S.; De Santi, C.; Moens, P.; Banerjee, A.; Zanoni, E.; Meneghesso, G.

Reliability and failure analysis in power GaN-HEMTs: An overview

2017 Meneghini, Matteo; Rossetto, Isabella; De Santi, Carlo; Rampazzo, Fabiana; Tajalli, Alaleh; Barbato, Alessandro; Ruzzarin, Maria; Borga, Matteo; Canato, Eleonora; Zanoni, Enrico; Meneghesso, Gaudenzio

Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation

2017 Meneghini, M; Tajalli, A; Moens, P; Baneree, A; Stockman, A; Tack, M; Gerardin, S; Bagatin, M; Paccagnella, A; Zanoni, E; Meneghesso, G

Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective

2016 Moens, P.; Banerjee, A.; Constant, A.; Coppens, P.; Caesar, M.; Li, Z.; Vandeweghe, S.; Declercq, F.; Padmanabhan, B.; Jeon, W.; Guo, J.; Salih, A.; Tack, M.; Meneghini, Matteo; Dalcanale, Stefano; Tajalli, Alaleh; Meneghesso, Gaudenzio; Zanoni, Enrico; Uren, M. J.; Chatterjee, I.; Karboyan, S.; Kuball, M.

Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs

2016 Tajalli, Alaleh; Rossetto, Isabella; Meneghini, Matteo; P., Romanini; M., Peroni; A., Pantellini; C., Lanzieri; Meneghesso, Gaudenzio; Zanoni, Enrico

Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron	2017	Stockman, ArnoUren, MichaelTajalli, AlalehMeneghini, MatteoBakeroot, BenoitMoens, Peter + -	PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE	-	European Solid-State Device Research Conference
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs	2017	Tajalli, AlalehMeneghini, MatteoRossetto, IsabellaMoens, PeterBanerjee, AbhishekZanoni, EnricoMeneghesso, Gaudenzio + -	MICROELECTRONICS RELIABILITY	-	-
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift	2017	Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, GaudenzioMoens, PeterBanerjee, AbhishekVandeweghe, Steven + -	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	-	IEEE International Reliability Physics Symposium Proceedings
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs	2017	Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Moens, P.Banerjee, A.Zanoni, E.Meneghesso, G. + -	IEEE TRANSACTIONS ON ELECTRON DEVICES	-	-
Reliability and failure analysis in power GaN-HEMTs: An overview	2017	Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	-	IEEE International Reliability Physics Symposium Proceedings
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation	2017	Meneghini, MTajalli, AMoens, PBaneree, AStockman, ATack, MGerardin, SBagatin, MPaccagnella, AZanoni, EMeneghesso, G + -	-	-	IEEE International Electron Devices Meeting
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective	2016	Moens, P.Banerjee, A.Constant, A.Coppens, P.Caesar, M.Li, Z.Vandeweghe, S.Declercq, F.Padmanabhan, B.Jeon, W.Guo, J.Salih, A.Tack, M.MENEGHINI, MATTEODALCANALE, STEFANOTAJALLI, ALALEHMENEGHESSO, GAUDENZIOZANONI, ENRICOUren, M. J.Chatterjee, I.Karboyan, S.Kuball, M. + -	-	-	229th ECS Meeting - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs	2016	TAJALLI, ALALEHROSSETTO, ISABELLAMENEGHINI, MATTEOP. RomaniniM. PeroniA. PantelliniC. LanzieriMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	-	-	Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe

Mostrati risultati da 21 a 28 di 28

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