RUZZARIN, MARIA

RUZZARIN, MARIA  

Università di Padova  

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Risultati 1 - 20 di 33 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 2016 MENEGHESSO, GAUDENZIOBISI, DAVIDEROSSETTO, ISABELLARUZZARIN, MARIAMENEGHINI, MATTEOZANONI, ENRICO - - IEEE International Integrated Reliability Workshop (IEEE IIRW), October 8-12, 2017, Stanford Sierra Conference Center, Fallen Leaf Lake, CA, USA
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEORUZZARIN, MARIAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiFabiana RampazzoIsabella RossettoMaria RuzzarinNicola TrivellinGaudenzio MeneghessoMatteo Meneghini + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 2017 Maria RuzzarinAlessandro BarbatoMatteo MeneghiniIsabella RossettoGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 2017 Maria RuzzarinMatteo MeneghiniDavide BisiCarlo De SantiGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiIsabella RossettoMaria RuzzarinNicola TrivellinAlessandro ChiniGaudenzio MeneghessoMatteo Meneghini - - Proceedings of the 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017)
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 2017 Ruzzarin, M.Meneghini, M.Bisi, D.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 2018 M. RuzzarinM. MeneghiniA. BarbatoPADOVAN, VALERIAG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0
Degradation of vertical GaN FETs under gate and drain stress 2018 Ruzzarin, M.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments 2018 Ruzzarin, M.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Positive and negative threshold voltage instabilities in GaN-based transistors 2018 Meneghesso, G.De Santi, C.Ruzzarin, M.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress 2018 Ruzzarin, M.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reliability of GaN-Based Power Devices 2018 G. MeneghessoE. ZanoniM. MeneghiniM. RuzzarinI. Rossetto - - Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion