RUZZARIN, MARIA

RUZZARIN, MARIA  

Università di Padova  

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Risultati 1 - 20 di 34 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 Mukherjee K.Borga M.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 2019 Ruzzarin M.De Santi C.Chiocchetta F.Zanoni E.Meneghesso G.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress 2018 Ruzzarin, M.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation Mechanisms of GaN-Based Vertical Devices: A Review 2020 Meneghini M.Fabris E.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation of vertical GaN FETs under gate and drain stress 2018 Ruzzarin, M.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments 2018 Ruzzarin, M.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors 2019 M. RuzzarinM. MeneghiniC. de SantiA. NevianiG. MeneghessoE. Zanoni + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Exploration of gate trench module for vertical GaN devices 2020 Ruzzarin M.Liang H.De Santi C.Neviani A.Meneghini M.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 2019 Ruzzarin, MariaDe Santi, CarloMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE ELECTRON DEVICE LETTERS - -
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 2019 Ruzzarin M.Borga M.Zanoni E.Meneghini M.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator 2020 Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 2017 Ruzzarin, M.Meneghini, M.Bisi, D.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Positive and negative threshold voltage instabilities in GaN-based transistors 2018 Meneghesso, G.De Santi, C.Ruzzarin, M.Zanoni, E. + MICROELECTRONICS RELIABILITY - -