DALCANALE, STEFANO

DALCANALE, STEFANO  

Università di Padova  

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Risultati 1 - 15 di 15 (tempo di esecuzione: 0.019 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 2015 MENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOBISI, DAVIDEZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 2014 STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 2016 MENEGHINI, MATTEODALCANALE, STEFANOTAJALLI, ALALEHMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 229th ECS Meeting - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 2016 MENEGHINI, MATTEOSILVESTRI, RICCARDOROSSETTO, ISABELLAZANONI, ENRICOMENEGHESSO, GAUDENZIODALCANALE, STEFANO + MICROELECTRONICS RELIABILITY - -
Proton induced trapping effect on space compatible GaN HEMTs 2014 STOCCO, ANTONIOGERARDIN, SIMONEBISI, DAVIDEDALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability analysis of GaN HEMT for space applications and switching converters based on advanced experimental techniques and two dimensional device simulations 2017 Dalcanale, Stefano - - -
Reliability improvement of AlGaN/GaN HEMTs for space applications 2014 DALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Proc. of 38th Workshop on Compound Semiconductor Devices and Integrated Circuits
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 2016 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANADE SANTI, CARLOROSSETTO, ISABELLA - - Proc. of the 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 2014 STOCCO, ANTONIODALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of 7th ESA-MOD Workshop on Wideband Gap semiconductors and Components
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 2015 MENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOBISI, DAVIDEZANONI, ENRICOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEODE SANTI, CARLODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -