TAJALLI, ALALEH

TAJALLI, ALALEH  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 28 (tempo di esecuzione: 0.017 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
Characterization and Study of Reliability Aspects in GaN High ElectronMobility Transistors 2018 Tajalli, Alaleh - - -
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Degradation physics of GaN-based lateral and vertical devices 2019 Meneghini M.De Santi C.Barbato A.Borga M.Canato E.CHIOCCHETTA, FRANCESCAFabris E.Masin F.Nardo A.Rampazzo F.Ruzzarin M.Tajalli A.Barbato M.Meneghesso G.Zanoni E. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 2018 TAJALLI, ALALEHMeneghini, M.Gerardin, S.Bagatin, M.Paccagnella, A.Zanoni, E.Meneghesso, G. + PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 2017 Tajalli, AlalehMeneghini, MatteoRossetto, IsabellaZanoni, EnricoMeneghesso, Gaudenzio + MICROELECTRONICS RELIABILITY - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 2020 Tajalli A.Meneghini M.Zanoni E.Medjdoub F.Meneghesso G. + MATERIALS - -
High voltage GaN on si with low trapping up to 1200V 2018 A. TajalliM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 2016 TAJALLI, ALALEHROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 2016 MENEGHINI, MATTEODALCANALE, STEFANOTAJALLI, ALALEHMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 229th ECS Meeting - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 2019 Tajalli A.Meneghini M.Meneghesso G.Medjdoub F. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 2018 CANATO, ELEONORATajalli, A.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)