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TAJALLI, ALALEH

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Pubblicazioni (Tutti)

Risultati 1 - 20 di 20 (tempo di esecuzione: 0.001 secondi).

	Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
51	Degradation physics of GaN-based lateral and vertical devices	2019	MENEGHINI, MATTEO ; DE SANTI, CARLO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; CHIOCCHETTA, FRANCESCA ; FABRIS, ELENA ; MASIN, FABRIZIO ; NARDO, ARIANNA ; RAMPAZZO, FABIANA ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; BARBATO, MARCO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
52	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors	2019	Stockman, A.; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; Uren, M. J.; Mouhoubi, S.; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Moens, P.; Bakeroot, B.	IEEE TRANSACTIONS ON ELECTRON DEVICES
53	Towards low-trapping GaN-on-silicon material system for 1200 V applications	2018	TAJALLI, ALALEH ; I. Abid; R. Kabouche; M. Zegaoui; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; A. Nishikawa; F. Medjdoub			Proceedings of the European Materials Research Society Fall Meeting 2018
54	Challenges towards highly reliable GaN power transistors	2018	MENEGHINI, MATTEO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; DE SANTI, CARLO ; FABRIS, ELENA ; RAMPAZZO, FABIANA ; TAJALLI, ALALEH ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Proceedings of the GaN Marathon 2.0
55	High voltage GaN on si with low trapping up to 1200V	2018	TAJALLI, ALALEH ; I. Abid; R. Kabouche; M. Zegaoui; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; A. Nishikawa; F. Medjdoub			Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
56	Gallium Nitride power devices: challenges and perspectives	2018	MENEGHINI, MATTEO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; DE SANTI, CARLO ; FABRIS, ELENA ; RAMPAZZO, FABIANA ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
57	Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics	2018	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; BARBATO, ALESSANDRO ; BARBATO, MARCO ; BORGA, MATTEO ; CANATO, ELEONORA ; FABRIS, ELENA ; MASIN, FABRIZIO ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; ZANONI, ENRICO			Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
58	Recent Advancements in Power GaN Reliability	2018	DE SANTI, CARLO ; MENEGHINI, MATTEO ; BORGA, MATTEO ; RUZZARIN, MARIA ; CANATO, ELEONORA ; TAJALLI, ALALEH ; BARBATO, ALESSANDRO ; FABRIS, ELENA ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO			Proceedings of the 2018 Materials Research Society Spring Meeting
59	Dynamic-ron control via proton irradiation in AlGaN/GaN transistors	2018	TAJALLI, ALALEH ; Stockman, A.; MENEGHINI, MATTEO ; Mouhoubi, S.; Banerjee, A.; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; ZANONI, ENRICO ; Tack, M.; Bakeroot, B.; Moens, P.; MENEGHESSO, GAUDENZIO	PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS		Proceedings of the International Symposium on Power Semiconductor Devices and ICs
60	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs	2018	Stockman, A.; CANATO, ELEONORA ; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Moens, P.; Bakeroot, B.	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS		IEEE International Reliability Physics Symposium Proceedings
61	Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors	2018	TAJALLI, ALALEH ; CANATO, ELEONORA ; NARDO, ARIANNA ; MENEGHINI, MATTEO ; Stockman, A.; Moens, P.; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MICROELECTRONICS RELIABILITY
62	Trapping phenomena and degradation mechanisms in GaN-based power HEMTs	2018	MENEGHINI, MATTEO ; TAJALLI, ALALEH ; Moens, Peter; Banerjee, Abhishek; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
63	GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift	2017	DALCANALE, STEFANO ; MENEGHINI, MATTEO ; TAJALLI, ALALEH ; ROSSETTO, ISABELLA ; RUZZARIN, MARIA ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO ; Moens, Peter; Banerjee, Abhishek; Vandeweghe, Steven	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS		IEEE International Reliability Physics Symposium Proceedings
64	Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs	2017	ROSSETTO, ISABELLA ; MENEGHINI, MATTEO ; TAJALLI, ALALEH ; DALCANALE, STEFANO ; DE SANTI, CARLO ; Moens, P.; Banerjee, A.; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	IEEE TRANSACTIONS ON ELECTRON DEVICES
65	Reliability and failure analysis in power GaN-HEMTs: An overview	2017	MENEGHINI, MATTEO ; ROSSETTO, ISABELLA ; DE SANTI, CARLO ; RAMPAZZO, FABIANA ; TAJALLI, ALALEH ; BARBATO, ALESSANDRO ; RUZZARIN, MARIA ; BORGA, MATTEO ; CANATO, ELEONORA ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS		IEEE International Reliability Physics Symposium Proceedings
66	Field and hot electron-induced degradation in GaN-based power MIS-HEMTs	2017	TAJALLI, ALALEH ; MENEGHINI, MATTEO ; ROSSETTO, ISABELLA ; Moens, Peter; Banerjee, Abhishek; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MICROELECTRONICS RELIABILITY
67	Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron	2017	Stockman, Arno; Uren, Michael; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; Bakeroot, Benoit; Moens, Peter	PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE		European Solid-State Device Research Conference
68	Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation	2017	MENEGHINI, MATTEO ; TAJALLI, ALALEH ; Moens, P; Baneree, A; Stockman, A; Tack, M; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO			IEEE International Electron Devices Meeting
69	Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective	2016	Moens, P.; Banerjee, A.; Constant, A.; Coppens, P.; Caesar, M.; Li, Z.; Vandeweghe, S.; Declercq, F.; Padmanabhan, B.; Jeon, W.; Guo, J.; Salih, A.; Tack, M.; MENEGHINI, MATTEO ; DALCANALE, STEFANO ; TAJALLI, ALALEH ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Uren, M. J.; Chatterjee, I.; Karboyan, S.; Kuball, M.			229th ECS Meeting - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
70	Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs	2016	TAJALLI, ALALEH ; ROSSETTO, ISABELLA ; MENEGHINI, MATTEO ; P. Romanini; M. Peroni; A. Pantellini; C. Lanzieri; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe

Dettaglio

Nome completo:

TAJALLI, ALALEH

struttura:

Dipartimento di Ingegneria dell'Informazione - DEI

settore SSD:

Settore ING-INF/01 - Elettronica