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TAJALLI, ALALEH

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Pubblicazioni (Tutti)

Risultati 1 - 20 di 20 (tempo di esecuzione: 0.0 secondi).

	Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
1	The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors	2019	Stockman, A.; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; Uren, M. J.; Mouhoubi, S.; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Moens, P.; Bakeroot, B.	IEEE TRANSACTIONS ON ELECTRON DEVICES
2	Degradation physics of GaN-based lateral and vertical devices	2019	MENEGHINI, MATTEO ; DE SANTI, CARLO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; CHIOCCHETTA, FRANCESCA ; FABRIS, ELENA ; MASIN, FABRIZIO ; NARDO, ARIANNA ; RAMPAZZO, FABIANA ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; BARBATO, MARCO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO		PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING	Proceedings of SPIE - The International Society for Optical Engineering
3	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs	2018	Stockman, A.; CANATO, ELEONORA ; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Moens, P.; Bakeroot, B.	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS		IEEE International Reliability Physics Symposium Proceedings
4	Dynamic-ron control via proton irradiation in AlGaN/GaN transistors	2018	TAJALLI, ALALEH ; Stockman, A.; MENEGHINI, MATTEO ; Mouhoubi, S.; Banerjee, A.; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; ZANONI, ENRICO ; Tack, M.; Bakeroot, B.; Moens, P.; MENEGHESSO, GAUDENZIO	PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS		Proceedings of the International Symposium on Power Semiconductor Devices and ICs
5	Trapping phenomena and degradation mechanisms in GaN-based power HEMTs	2018	MENEGHINI, MATTEO ; TAJALLI, ALALEH ; Moens, Peter; Banerjee, Abhishek; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
6	Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors	2018	TAJALLI, ALALEH ; CANATO, ELEONORA ; NARDO, ARIANNA ; MENEGHINI, MATTEO ; Stockman, A.; Moens, P.; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MICROELECTRONICS RELIABILITY
7	Gallium Nitride power devices: challenges and perspectives	2018	MENEGHINI, MATTEO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; DE SANTI, CARLO ; FABRIS, ELENA ; RAMPAZZO, FABIANA ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
8	Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics	2018	MENEGHESSO, GAUDENZIO ; MENEGHINI, MATTEO ; DE SANTI, CARLO ; BARBATO, ALESSANDRO ; BARBATO, MARCO ; BORGA, MATTEO ; CANATO, ELEONORA ; FABRIS, ELENA ; MASIN, FABRIZIO ; RUZZARIN, MARIA ; TAJALLI, ALALEH ; ZANONI, ENRICO			Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
9	Recent Advancements in Power GaN Reliability	2018	DE SANTI, CARLO ; MENEGHINI, MATTEO ; BORGA, MATTEO ; RUZZARIN, MARIA ; CANATO, ELEONORA ; TAJALLI, ALALEH ; BARBATO, ALESSANDRO ; FABRIS, ELENA ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO			Proceedings of the 2018 Materials Research Society Spring Meeting
10	High voltage GaN on si with low trapping up to 1200V	2018	TAJALLI, ALALEH ; I. Abid; R. Kabouche; M. Zegaoui; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; A. Nishikawa; F. Medjdoub			Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
11	Towards low-trapping GaN-on-silicon material system for 1200 V applications	2018	TAJALLI, ALALEH ; I. Abid; R. Kabouche; M. Zegaoui; MENEGHINI, MATTEO ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; A. Nishikawa; F. Medjdoub			Proceedings of the European Materials Research Society Fall Meeting 2018
12	Challenges towards highly reliable GaN power transistors	2018	MENEGHINI, MATTEO ; BARBATO, ALESSANDRO ; BORGA, MATTEO ; CANATO, ELEONORA ; DE SANTI, CARLO ; FABRIS, ELENA ; RAMPAZZO, FABIANA ; TAJALLI, ALALEH ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Proceedings of the GaN Marathon 2.0
13	Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs	2017	ROSSETTO, ISABELLA ; MENEGHINI, MATTEO ; TAJALLI, ALALEH ; DALCANALE, STEFANO ; DE SANTI, CARLO ; Moens, P.; Banerjee, A.; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	IEEE TRANSACTIONS ON ELECTRON DEVICES
14	GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift	2017	DALCANALE, STEFANO ; MENEGHINI, MATTEO ; TAJALLI, ALALEH ; ROSSETTO, ISABELLA ; RUZZARIN, MARIA ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO ; Moens, Peter; Banerjee, Abhishek; Vandeweghe, Steven	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS		IEEE International Reliability Physics Symposium Proceedings
15	Field and hot electron-induced degradation in GaN-based power MIS-HEMTs	2017	TAJALLI, ALALEH ; MENEGHINI, MATTEO ; ROSSETTO, ISABELLA ; Moens, Peter; Banerjee, Abhishek; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	MICROELECTRONICS RELIABILITY
16	Reliability and failure analysis in power GaN-HEMTs: An overview	2017	MENEGHINI, MATTEO ; ROSSETTO, ISABELLA ; DE SANTI, CARLO ; RAMPAZZO, FABIANA ; TAJALLI, ALALEH ; BARBATO, ALESSANDRO ; RUZZARIN, MARIA ; BORGA, MATTEO ; CANATO, ELEONORA ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO	IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS		IEEE International Reliability Physics Symposium Proceedings
17	Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron	2017	Stockman, Arno; Uren, Michael; TAJALLI, ALALEH ; MENEGHINI, MATTEO ; Bakeroot, Benoit; Moens, Peter	PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE		European Solid-State Device Research Conference
18	Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation	2017	MENEGHINI, MATTEO ; TAJALLI, ALALEH ; Moens, P; Baneree, A; Stockman, A; Tack, M; GERARDIN, SIMONE ; BAGATIN, MARTA ; PACCAGNELLA, ALESSANDRO ; ZANONI, ENRICO ; MENEGHESSO, GAUDENZIO			IEEE International Electron Devices Meeting
19	Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs	2016	TAJALLI, ALALEH ; ROSSETTO, ISABELLA ; MENEGHINI, MATTEO ; P. Romanini; M. Peroni; A. Pantellini; C. Lanzieri; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO			Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
20	Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective	2016	Moens, P.; Banerjee, A.; Constant, A.; Coppens, P.; Caesar, M.; Li, Z.; Vandeweghe, S.; Declercq, F.; Padmanabhan, B.; Jeon, W.; Guo, J.; Salih, A.; Tack, M.; MENEGHINI, MATTEO ; DALCANALE, STEFANO ; TAJALLI, ALALEH ; MENEGHESSO, GAUDENZIO ; ZANONI, ENRICO ; Uren, M. J.; Chatterjee, I.; Karboyan, S.; Kuball, M.			229th ECS Meeting - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Dettaglio

Nome completo:

TAJALLI, ALALEH

struttura:

Dipartimento di Ingegneria dell'Informazione - DEI

settore SSD:

Settore ING-INF/01 - Elettronica