RENSO, NICOLA

RENSO, NICOLA  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 18 di 18 (tempo di esecuzione: 0.031 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 2016 BUFFOLO, MATTEOMENEGHINI, MATTEODE SANTI, CARLOFELBER, HENRYRENSO, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 2017 Renso, N.Meneghini, M.Buffolo, M.De Santi, C.Meneghesso, G.Zanoni, E. MICROELECTRONICS RELIABILITY - -
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 2017 De Santi, CarloMeneghini, MatteoRenso, NicolaBuffolo, MatteoTrivellin, NicolaMeneghesso, GaudenzioZanoni, Enrico + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the GaN Marathon 2.0
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 2018 C. De SantiM. MeneghiniCARIA, ALESSANDRON. RensoMEDJDOUB, FARIDE. ZanoniG. Meneghesso + - - Proceedings of the Compound Semiconductor Week 2018
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 2018 Renso, N.Buffolo, M.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -
Evidence of optically induced degradation in gallium nitride optoelectronic devices 2018 De Santi, CarloCaria, AlessandroRenso, NicolaMedjdoub, FaridMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS EXPRESS - -
Evidence for avalanche generation in reverse-biased InGaN LEDs 2019 Renso N.De Santi C.Dalapati P.Monti D.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 2019 Carlo De SantiMatteo BuffoloNicola RensoAndrea NevianiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini APPLIED PHYSICS EXPRESS - -
Demonstration of band-to-band tunneling and avalanche regime in InGaN LEDs 2019 N. RensoC. De SantiP. DalapatiD. MontiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Photon-driven degradation processes in GaN-based optoelectronic devices 2019 C. De SantiA. CariaN. RensoF. MedjdoubG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 2019 N. RensoM. BuffoloC. De SantiG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Origin of the low-forward leakage current in InGaN-based LEDs 2019 De Santi C.Buffolo M.Renso N.Meneghesso G.Zanoni E.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Challenges for highly reliable GaN-based LEDs 2019 Zanoni E.De Santi C.Trivellin N.Renso N.Buffolo M.Monti D.Caria A.Piva F.Meneghesso G.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs 2019 Renso, Nicola - - -
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 2020 Caria A.Renso N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 2020 Renso, NDe Santi, CCaria, AMeneghesso, GZanoni, EMeneghini, M + JOURNAL OF APPLIED PHYSICS - -