TAJALLI, ALALEH

TAJALLI, ALALEH  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 9 di 9 (tempo di esecuzione: 0.02 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 2019 Tajalli, A.Meneghini, M.Gerardin, S.Bagatin, M.Paccagnella, A.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 2017 Tajalli, AlalehMeneghini, MatteoRossetto, IsabellaZanoni, EnricoMeneghesso, Gaudenzio + MICROELECTRONICS RELIABILITY - -
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 2020 Tajalli A.Meneghini M.Zanoni E.Medjdoub F.Meneghesso G. + MATERIALS - -
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 2019 Tajalli A.Meneghini M.Meneghesso G.Medjdoub F. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs 2018 Meneghini, MatteoTajalli, AlalehZanoni, EnricoMeneghesso, Gaudenzio + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Vertical breakdown of GaN on Si due to V-pits 2020 Tajalli A.Meneghini M.Medjdoub F.Meneghesso G. + JOURNAL OF APPLIED PHYSICS - -
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 2020 Tajalli A.Borga M.Meneghini M.Santi C. D.Zanoni E.Medjdoub F.Meneghesso G. + MICROMACHINES - -