TAJALLI, ALALEH

TAJALLI, ALALEH  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 28 (tempo di esecuzione: 0.038 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 2016 TAJALLI, ALALEHROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 2016 MENEGHINI, MATTEODALCANALE, STEFANOTAJALLI, ALALEHMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 229th ECS Meeting - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 2017 Tajalli, AlalehMeneghini, MatteoRossetto, IsabellaZanoni, EnricoMeneghesso, Gaudenzio + MICROELECTRONICS RELIABILITY - -
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron 2017 Tajalli, AlalehMeneghini, Matteo + PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE - European Solid-State Device Research Conference
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 2017 Meneghini, MTajalli, AGerardin, SBagatin, MPaccagnella, AZanoni, EMeneghesso, G + - - IEEE International Electron Devices Meeting
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
High voltage GaN on si with low trapping up to 1200V 2018 A. TajalliM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Towards low-trapping GaN-on-silicon material system for 1200 V applications 2018 A. TajalliM. MeneghiniG. MeneghessoE. Zanoni + - - Proceedings of the European Materials Research Society Fall Meeting 2018
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Challenges towards highly reliable GaN power transistors 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the GaN Marathon 2.0
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 2018 CANATO, ELEONORATajalli, A.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 2018 TAJALLI, ALALEHMeneghini, M.Gerardin, S.Bagatin, M.Paccagnella, A.Zanoni, E.Meneghesso, G. + PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs 2018 Meneghini, MatteoTajalli, AlalehZanoni, EnricoMeneghesso, Gaudenzio + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Characterization and Study of Reliability Aspects in GaN High ElectronMobility Transistors 2018 Tajalli, Alaleh - - -
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 2019 Tajalli, A.Meneghini, M.Gerardin, S.Bagatin, M.Paccagnella, A.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -