RENSO, NICOLA

RENSO, NICOLA  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 18 di 18 (tempo di esecuzione: 0.02 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 2016 BUFFOLO, MATTEOMENEGHINI, MATTEODE SANTI, CARLOFELBER, HENRYRENSO, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 2017 De Santi, CarloMeneghini, MatteoRenso, NicolaBuffolo, MatteoTrivellin, NicolaMeneghesso, GaudenzioZanoni, Enrico + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 2017 Renso, N.Meneghini, M.Buffolo, M.De Santi, C.Meneghesso, G.Zanoni, E. MICROELECTRONICS RELIABILITY - -
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the GaN Marathon 2.0
Evidence of optically induced degradation in gallium nitride optoelectronic devices 2018 De Santi, CarloCaria, AlessandroRenso, NicolaMedjdoub, FaridMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS EXPRESS - -
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 2018 Renso, N.Buffolo, M.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 2018 C. De SantiM. MeneghiniA. CariaN. RensoE. ZanoniG. Meneghesso + - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 2018 C. De SantiM. MeneghiniCARIA, ALESSANDRON. RensoMEDJDOUB, FARIDE. ZanoniG. Meneghesso + - - Proceedings of the Compound Semiconductor Week 2018
Demonstration of band-to-band tunneling and avalanche regime in InGaN LEDs 2019 N. RensoC. De SantiP. DalapatiD. MontiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Evidence for avalanche generation in reverse-biased InGaN LEDs 2019 Renso N.De Santi C.Dalapati P.Monti D.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Photon-driven degradation processes in GaN-based optoelectronic devices 2019 C. De SantiA. CariaN. RensoF. MedjdoubG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Challenges for highly reliable GaN-based LEDs 2019 Zanoni E.De Santi C.Trivellin N.Renso N.Buffolo M.Monti D.Caria A.Piva F.Meneghesso G.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 2019 N. RensoM. BuffoloC. De SantiG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Origin of the low-forward leakage current in InGaN-based LEDs 2019 De Santi C.Buffolo M.Renso N.Meneghesso G.Zanoni E.Meneghini M. - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 2019 Carlo De SantiMatteo BuffoloNicola RensoAndrea NevianiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini APPLIED PHYSICS EXPRESS - -
Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs 2019 Renso, Nicola - - -
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 2020 Renso, NDe Santi, CCaria, AMeneghesso, GZanoni, EMeneghini, M + JOURNAL OF APPLIED PHYSICS - -
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 2020 Caria A.Renso N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings of SPIE - The International Society for Optical Engineering