FORNASIER, MIRKO

FORNASIER, MIRKO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 11 di 11 (tempo di esecuzione: 0.029 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits 2023 Zenari M.Buffolo M.Fornasier M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE Photonics West 2023 conference
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 2023 Francesco De PieriMirko FornasierZhan GaoFabiana RampazzoCarlo De SantiMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni - - Proceedings of ICNS-14
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 2024 Saro, Marcode Pieri, FrancescoCarlotto, AndreaFornasier, MirkoRampazzo, FabianaDe Santi, CarloMeneghesso, GaudenzioMeneghini, MatteoZanoni, EnricoBisi, Davide + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 2022 Z. GaoF. ChiocchettaM. FornasierM. SaroE. StramareA. TonelloC. SharmaN. ModoloC. De SantiF. RampazzoG. MeneghessoM. MeneghiniE. Zanoni + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 2023 Gao, ZhanDe Santi, CarloRampazzo, FabianaSaro, MarcoFornasier, MirkoMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 2022 F. ChiocchettaZ. GaoM. FornasierN. ModoloC. De SantiF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 2023 Zanoni, EnricoSanti, Carlo DeGao, ZhanBuffolo, MatteoFornasier, MirkoSaro, MarcoPieri, Francesco DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 2023 M. BuffoloM. ZenariM. FornasierC. De SantiG. MeneghessoE. ZanoniM. Meneghini + - - Proceeding of CLEO, Conference on Lasers and Electro-Optics, 2023
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 2023 Gao, ZChiocchetta, FRampazzo, FDe Santi, CFornasier, MMeneghesso, GMeneghini, MZanoni, E - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 2023 Gao, Z.Rampazzo, FDe Santi, CFornasier, MMeneghesso, GMeneghini, MZanoni, E + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits 2023 Zenari, MBuffolo, MFornasier, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + IEEE JOURNAL OF QUANTUM ELECTRONICS - -