ZANONI, ENRICO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 74.383
AS - Asia 33.249
EU - Europa 23.204
AF - Africa 8.567
SA - Sud America 6.386
OC - Oceania 856
Continente sconosciuto - Info sul continente non disponibili 420
Totale 147.065
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 69.844
SG - Singapore 11.906
CN - Cina 5.965
HK - Hong Kong 3.942
IT - Italia 3.786
BR - Brasile 3.565
PL - Polonia 2.313
VN - Vietnam 2.302
DE - Germania 2.019
IE - Irlanda 1.877
FI - Finlandia 1.794
FR - Francia 979
GB - Regno Unito 956
RU - Federazione Russa 867
SE - Svezia 864
UA - Ucraina 788
IN - India 699
NL - Olanda 569
AR - Argentina 538
JP - Giappone 529
KR - Corea 501
AT - Austria 464
TR - Turchia 435
CA - Canada 428
TW - Taiwan 420
MX - Messico 393
BJ - Benin 385
IQ - Iraq 345
ZA - Sudafrica 340
ES - Italia 334
EC - Ecuador 328
ID - Indonesia 318
BE - Belgio 301
CH - Svizzera 297
PY - Paraguay 287
CO - Colombia 281
AO - Angola 276
CI - Costa d'Avorio 276
MA - Marocco 272
GR - Grecia 265
AL - Albania 263
VE - Venezuela 262
SA - Arabia Saudita 259
UZ - Uzbekistan 259
PA - Panama 249
CL - Cile 247
PK - Pakistan 245
NI - Nicaragua 244
CV - Capo Verde 243
KE - Kenya 241
MK - Macedonia 241
DO - Repubblica Dominicana 240
EG - Egitto 240
BB - Barbados 238
JO - Giordania 238
CZ - Repubblica Ceca 236
NP - Nepal 234
AE - Emirati Arabi Uniti 233
BW - Botswana 233
HU - Ungheria 233
JM - Giamaica 233
KG - Kirghizistan 233
SK - Slovacchia (Repubblica Slovacca) 231
UY - Uruguay 231
PE - Perù 230
IR - Iran 229
GT - Guatemala 228
IL - Israele 227
RS - Serbia 225
DZ - Algeria 224
KZ - Kazakistan 222
NO - Norvegia 222
AZ - Azerbaigian 220
HN - Honduras 220
RO - Romania 220
BA - Bosnia-Erzegovina 219
MD - Moldavia 218
AU - Australia 216
MG - Madagascar 216
TN - Tunisia 216
MZ - Mozambico 215
LC - Santa Lucia 214
SN - Senegal 214
CY - Cipro 213
EE - Estonia 213
MY - Malesia 213
ET - Etiopia 212
MW - Malawi 212
PS - Palestinian Territory 212
UG - Uganda 212
YT - Mayotte 212
TJ - Tagikistan 210
CG - Congo 209
CR - Costa Rica 209
BO - Bolivia 208
GN - Guinea 208
LU - Lussemburgo 208
LV - Lettonia 208
DK - Danimarca 207
GF - Guiana Francese 206
Totale 136.621
Salva come PNG Salva come JPEG
Città #
Fairfield 9.498
Woodbridge 7.390
Ashburn 6.954
Singapore 6.181
Houston 5.698
Ann Arbor 4.881
Hong Kong 3.686
Seattle 3.580
Wilmington 3.354
Chandler 3.304
Cambridge 3.173
Jacksonville 2.376
Santa Clara 2.266
Bytom 1.942
Beijing 1.815
Dublin 1.799
Boardman 1.640
Princeton 1.200
Padova 1.009
Medford 875
San Diego 830
Los Angeles 747
Des Moines 712
Ho Chi Minh City 704
Helsinki 665
Munich 614
Nanjing 555
New York 429
Chicago 407
Dong Ket 403
Hanoi 398
Cotonou 360
São Paulo 328
Vienna 286
Abidjan 260
Roxbury 258
Guangzhou 251
Hefei 251
Buffalo 243
Managua 235
Padua 230
Tashkent 229
Luanda 225
Panama City 224
Amman 223
Tokyo 223
London 219
Dakar 211
Nairobi 207
Bridgetown 206
Kampala 206
Leesburg 205
Bishkek 204
Castries 203
Conakry 202
Baku 200
Praia 199
Montevideo 196
Warsaw 195
Antananarivo 193
Libreville 193
Ulan Bator 193
Dushanbe 191
Nouakchott 188
Turku 186
Phnom Penh 185
Milan 183
Harare 182
Accra 181
Bamako 180
Shenyang 178
Kigali 176
Lusaka 176
Maputo 170
Nassau 170
Nuremberg 170
Riga 169
Willemstad 169
Yerevan 167
Havana 166
Riese Pio X 166
Vientiane 165
Gaborone 163
Podgorica 161
San José 160
Nanchang 159
Noumea 157
Andorra la Vella 155
Addis Ababa 154
Tallinn 154
Salt Lake City 153
Lima 152
Hebei 151
Cayenne 150
Dar es Salaam 150
Kingston 148
Norwalk 147
Lilongwe 144
Reykjavik 144
Djibouti 142
Totale 92.405
Salva come PNG Salva come JPEG
Nome #
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 573
Three terminal Breakdown evaluation in GaN-HEMT 537
Vertical GaN devices: Process and reliability 438
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 389
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 380
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 321
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 289
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 267
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 262
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 260
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 240
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 238
A review of failure modes and mechanisms of GaN-based HEMT's 237
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress 233
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 232
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 230
2.1 A/mm current density AlGaN/GaN HEMT 226
Analysis of hot carrier aging degradation in GaN MESFETs 225
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 224
ESD characterization of multi-chip RGB LEDs 223
Accelerated life test of high brightness light emitting diodes 220
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 220
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 219
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 218
Adaptive multi-wavelength LED star simulator for space life studies 218
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 217
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 216
Analysis of the role of current in the degradation of InGaN-based laser diodes 215
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 215
Failure modes and mechanisms of DC-aged GaN LEDs 213
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 213
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 213
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 213
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 213
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 213
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 212
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 211
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 210
Failure mechanisms of gallium nitride LEDs related with passivation 209
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 209
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 208
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 208
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 208
Degradation physics of GaN-based lateral and vertical devices 206
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 206
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 205
Reliability aspects of GaN-HEMTs on composite substrates 204
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 204
Defect-related degradation of Deep-UV-LEDs 204
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 201
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 201
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 200
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 mu m AlGaN/GaN HEMTs 199
Anomalous Kink Effect in GaN High Electron Mobility Transistors 199
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 199
Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT 197
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 197
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells 197
Diagnosis of trapping phenomena in GaN MESFETs 197
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 196
Influence of device self-heating on trap activation energy extraction 196
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 196
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 196
Modeling the optical degradation kinetics of UV-C LEDs 195
Reliability of visible GaN LEDs in plastic package 194
"Hot-plugging" of LED modules: Electrical characterization and device degradation 193
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 192
A novel fast and versatile temperature measurement system for LDMOS transistors 192
Reliability issues of Gallium Nitride High Electron Mobility Transistors 192
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 192
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 192
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 191
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 190
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 189
Reliability analysis of InGaN Blu-Ray laser diode 189
Near-UV LED-based systems for low-cost and compact oxygen-sensing systems in gas and liquids 189
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 189
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 188
Extensive analysis of the degradation of phosphor-converted LEDs 188
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 188
Positive and negative threshold voltage instabilities in GaN-based transistors 188
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 188
High temperature electro-optical degradation of InGaN/GaN HBLEDs 187
Reliability of blue-emitting Eu2+-doped phosphors for laser-lighting applications 186
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors 185
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 185
Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels 185
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 185
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 185
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 184
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 184
Defect-Related Degradation of AlGaN-Based UV-B LEDs 184
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 184
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 183
A Review on the Reliability of GaN-based Laser Diodes 183
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 182
High-temperature degradation of GaN LEDs related to passivation 181
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 181
High temperature instabilities of ohmic contacts on p-GaN 181
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 181
Totale 21.860
Salva come PNG Salva come JPEG
Categoria #
all - tutte 445.350
article - articoli 226.100
book - libri 302
conference - conferenze 0
curatela - curatele 298
other - altro 183
patent - brevetti 650
selected - selezionate 0
volume - volumi 10.419
Totale 683.302
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20216.723 0 0 0 0 0 679 668 1.248 1.216 823 1.055 1.034
2021/202211.139 294 1.612 1.646 695 361 478 581 1.181 489 256 1.194 2.352
2022/20239.541 1.766 399 172 839 1.603 1.399 264 771 1.208 133 613 374
2023/20246.470 535 892 694 550 472 792 459 267 236 301 618 654
2024/202525.109 136 1.523 1.129 1.271 3.299 1.553 1.143 1.965 1.617 799 4.365 6.309
2025/202651.896 3.325 7.900 13.925 15.024 9.650 2.072 0 0 0 0 0 0
Totale 147.921