ZANONI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 57.000
EU - Europa 7.981
AS - Asia 3.919
OC - Oceania 27
Continente sconosciuto - Info sul continente non disponibili 25
SA - Sud America 21
AF - Africa 7
Totale 68.980
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Nazione #
US - Stati Uniti d'America 56.812
CN - Cina 2.812
IT - Italia 1.968
IE - Irlanda 1.658
FI - Finlandia 1.314
DE - Germania 995
GB - Regno Unito 567
SE - Svezia 553
UA - Ucraina 533
VN - Vietnam 409
IN - India 205
CA - Canada 177
JP - Giappone 112
TW - Taiwan 112
KR - Corea 90
FR - Francia 77
NL - Olanda 63
HK - Hong Kong 58
BE - Belgio 43
RU - Federazione Russa 43
SG - Singapore 41
GR - Grecia 31
CH - Svizzera 30
AT - Austria 22
EU - Europa 19
RO - Romania 19
AU - Australia 17
TR - Turchia 17
BR - Brasile 14
ID - Indonesia 13
MX - Messico 10
NZ - Nuova Zelanda 10
PL - Polonia 10
DK - Danimarca 8
IL - Israele 8
SA - Arabia Saudita 8
BG - Bulgaria 7
A2 - ???statistics.table.value.countryCode.A2??? 6
LT - Lituania 6
NO - Norvegia 6
BD - Bangladesh 5
IR - Iran 5
MD - Moldavia 5
CY - Cipro 4
HR - Croazia 4
IQ - Iraq 4
MA - Marocco 4
MY - Malesia 4
RS - Serbia 4
AR - Argentina 3
ES - Italia 3
NP - Nepal 3
CO - Colombia 2
CZ - Repubblica Ceca 2
PT - Portogallo 2
TH - Thailandia 2
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EC - Ecuador 1
EE - Estonia 1
EG - Egitto 1
HU - Ungheria 1
IM - Isola di Man 1
KE - Kenya 1
KZ - Kazakistan 1
ME - Montenegro 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
OM - Oman 1
PH - Filippine 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 68.980
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Città #
Fairfield 9.495
Woodbridge 7.389
Houston 5.650
Ann Arbor 4.878
Ashburn 4.153
Seattle 3.545
Wilmington 3.328
Chandler 3.304
Cambridge 3.166
Jacksonville 2.372
Dublin 1.655
Princeton 1.200
Beijing 912
Medford 875
San Diego 828
Des Moines 711
Padova 691
Nanjing 545
Helsinki 519
Boardman 422
Dong Ket 403
Roxbury 258
Guangzhou 210
Leesburg 205
Munich 173
Shenyang 171
Nanchang 159
New York 158
Hebei 151
Norwalk 147
Montréal 139
London 132
Jiaxing 115
Mcallen 110
Changsha 102
Tianjin 97
Washington 83
Indiana 76
Pune 73
Redwood City 70
Shanghai 63
Jinan 53
Kharkiv 49
Milan 48
Los Angeles 47
Borås 45
Tappahannock 39
Zhengzhou 36
Ogden 35
Hsinchu 33
Kilburn 32
Mumbai 32
Tokyo 31
Central 27
Mestre 26
Rome 26
San Francisco 25
Turin 25
Chicago 24
Ningbo 23
Hangzhou 22
Taipei 21
Chiswick 20
Hounslow 19
Palermo 18
Pignone 18
Prescot 18
Rockville 18
Edinburgh 17
Falls Church 17
Phoenix 17
Arzignano 16
Frankfurt am Main 16
Modena 15
Sarcedo 15
Yangmei District 15
Lappeenranta 14
Nürnberg 14
Stuttgart 14
Yellow Springs 14
Yenibosna 14
Bologna 13
Haikou 13
Paris 13
Thessaloniki 13
Venice 13
Berlin 12
Bristol 12
Hwaseong-si 12
New Bedfont 12
Parma 12
Agordo 11
Azzano Decimo 11
Fuzhou 11
Southwark 11
Taichung 11
Vienna 11
Zurich 11
Cagliari 10
Cremona 10
Totale 59.963
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Nome #
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 505
Three terminal Breakdown evaluation in GaN-HEMT 486
Vertical GaN devices: Process and reliability 350
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 277
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 233
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 191
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 190
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 169
A review of failure modes and mechanisms of GaN-based HEMT's 168
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 167
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 165
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 155
Accelerated life test of high brightness light emitting diodes 153
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 152
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 152
Failure modes and mechanisms of DC-aged GaN LEDs 151
Analysis of hot carrier aging degradation in GaN MESFETs 151
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 151
Analysis of the role of current in the degradation of InGaN-based laser diodes 147
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 147
2.1 A/mm current density AlGaN/GaN HEMT 147
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 146
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 146
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 145
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 143
Defect-related degradation of Deep-UV-LEDs 143
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 142
Anomalous Kink Effect in GaN High Electron Mobility Transistors 142
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 141
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 141
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 141
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 140
A novel fast and versatile temperature measurement system for LDMOS transistors 139
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 139
Influence of device self-heating on trap activation energy extraction 139
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 139
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 139
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 138
ESD characterization of multi-chip RGB LEDs 137
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 137
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 137
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 137
Reliability analysis of InGaN Blu-Ray laser diode 136
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 136
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 136
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 133
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 132
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 131
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 130
Adaptive multi-wavelength LED star simulator for space life studies 130
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 130
Reliability aspects of GaN-HEMTs on composite substrates 129
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 129
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 129
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing 128
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 128
Reliability issues of Gallium Nitride High Electron Mobility Transistors 127
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs 127
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 126
Channel temperature measurement of PHEMT by means of optical probes 125
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 125
"Hot-plugging" of LED modules: Electrical characterization and device degradation 125
Failure mechanisms of gallium nitride LEDs related with passivation 125
Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT 124
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 124
Diagnosis of trapping phenomena in GaN MESFETs 124
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 124
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 123
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 123
Extensive analysis of the degradation of phosphor-converted LEDs 122
Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes 122
A Review on the Reliability of GaN-based Laser Diodes 122
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 121
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 119
Extensive analysis of the degradation of blu-ray laser diodes 119
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 119
Thermal storage effects on AlGaN/GaN HEMT 118
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 118
High-temperature degradation of GaN LEDs related to passivation 117
The role of Mg complexes in the degradation of InGaN-based LEDs 117
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 117
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 117
Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs 116
High temperature electro-optical degradation of InGaN/GaN HBLEDs 115
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 115
Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs 115
Reliability of visible GaN LEDs in plastic package 115
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 115
Positive and negative threshold voltage instabilities in GaN-based transistors 115
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress 114
Trapped Charge Modulation: A New Cause of Instability in AlGaAs/InGaAs Pseudomorphic HEMT's 114
Electroluminescence and other Diagnostic Techniques for the Study of Hot Electron Effects in Compound Semiconductor Devices 113
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 113
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 113
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 113
Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation 113
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors 112
ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests 112
Totale 14.445
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Categoria #
all - tutte 229.159
article - articoli 124.929
book - libri 130
conference - conferenze 0
curatela - curatele 112
other - altro 68
patent - brevetti 273
selected - selezionate 0
volume - volumi 5.471
Totale 360.142
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20195.198 0 0 0 0 0 0 0 0 0 1.121 2.203 1.874
2019/202016.507 2.080 413 182 2.970 1.653 1.182 1.243 1.695 1.822 1.709 950 608
2020/20219.653 596 713 453 711 457 679 668 1.248 1.216 823 1.055 1.034
2021/202211.139 294 1.612 1.646 695 361 478 581 1.181 489 256 1.194 2.352
2022/20239.531 1.766 399 172 839 1.603 1.399 264 771 1.206 127 611 374
2023/20245.169 535 890 694 551 469 793 457 267 236 277 0 0
Totale 69.605