RUZZARIN, MARIA
RUZZARIN, MARIA
Università di Padova
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
2019 Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress
2018 Ruzzarin, M.; Meneghini, M.; Barbato, A.; Padovan, V.; Haeberlen, O.; Silvestri, M.; Detzel, T.; Meneghesso, G.; Zanoni, E.
Degradation Mechanisms of GaN-Based Vertical Devices: A Review
2020 Meneghini, M.; Fabris, E.; Ruzzarin, M.; De Santi, C.; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
2018 Ruzzarin, M.; Meneghini, M.; De Santi, C.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
2019 Ruzzarin, M.; Meneghini, M.; de Santi, C.; Neviani, A.; Yu, F.; Strempel, K.; Fatahilah, M. F.; Witzigmann, B.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
2016 Ruzzarin, Maria; Meneghini, Matteo; Rossetto, Isabella; Van Hove, M.; Stoffels, S.; Wu, T. L.; Decoutere, S.; Meneghesso, Gaudenzio; Zanoni, Enrico
Exploration of gate trench module for vertical GaN devices
2020 Ruzzarin, M.; Geens, K.; Borga, M.; Liang, H.; You, S.; Bakeroot, B.; Decoutere, S.; De Santi, C.; Neviani, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
2019 Ge, Mei; Ruzzarin, Maria; Chen, Dunjun; Lu, Hai; Yu, Xinxin; Zhou, Jianjun; De Santi, Carlo; Zhang, Rong; Zheng, Youdou; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator
2020 Ruzzarin, M.; De Santi, C.; Yu, F.; Fatahilah, M. F.; Strempel, K.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors
2017 Ruzzarin, M.; Meneghini, M.; Bisi, D.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
2016 Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Ruzzarin, Maria; Van Hove, M.; Stoffels, S.; Wu, T. L.; Marcon, D.; Decoutere, S.; Meneghesso, Gaudenzio; Zanoni, Enrico
Positive and negative threshold voltage instabilities in GaN-based transistors
2018 Meneghesso, G.; Meneghini, M.; De Santi, C.; Ruzzarin, M.; Zanoni, E.
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
2016 Rossetto, Isabella; Meneghini, Matteo; Rizzato, V.; Ruzzarin, Maria; Favaron, Andrea; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T. L.; Marcon, D.; Decoutere, S.; Meneghesso, Gaudenzio; Zanoni, Enrico