CANATO, ELEONORA

CANATO, ELEONORA  

Università di Padova  

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Risultati 1 - 8 di 8 (tempo di esecuzione: 0.021 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 2019 Borga M.Meneghini M.Canato E.Medjdoub F.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 2017 Rossetto, I.Meneghini, M.Canato, E.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal 2021 Canato E.Meneghini M.Meneghesso G. + APPLIED PHYSICS EXPRESS - -
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 2018 Tajalli, A.Canato, E.NARDO, ARIANNAMeneghini, M.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 2020 Canato E.Meneghini M.De Santi C.Masin F.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 2019 MASIN, FABRIZIOMeneghini M.Canato E.De Santi C.Zanoni E.Meneghesso G. + APPLIED PHYSICS LETTERS - -
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 2021 Canato E.Meneghini M.Meneghesso G. + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -