BISI, DAVIDE
 Distribuzione geografica
Continente #
NA - Nord America 3.392
EU - Europa 498
AS - Asia 445
OC - Oceania 4
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.341
Nazione #
US - Stati Uniti d'America 3.387
CN - Cina 194
IT - Italia 162
SG - Singapore 132
FI - Finlandia 90
DE - Germania 73
SE - Svezia 49
FR - Francia 38
IN - India 34
GB - Regno Unito 32
TW - Taiwan 29
KR - Corea 24
UA - Ucraina 15
IE - Irlanda 11
HK - Hong Kong 9
NL - Olanda 9
BE - Belgio 7
JP - Giappone 7
CA - Canada 5
ES - Italia 5
ID - Indonesia 4
IL - Israele 4
TR - Turchia 4
AT - Austria 2
AU - Australia 2
IR - Iran 2
NZ - Nuova Zelanda 2
BG - Bulgaria 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
EG - Egitto 1
EU - Europa 1
KZ - Kazakistan 1
MY - Malesia 1
RO - Romania 1
RU - Federazione Russa 1
Totale 4.341
Città #
Fairfield 590
Woodbridge 492
Houston 330
Ann Arbor 275
Ashburn 256
Seattle 216
Chandler 198
Wilmington 194
Cambridge 167
Singapore 89
Medford 60
Princeton 60
Des Moines 57
San Diego 44
Padova 43
Beijing 40
Helsinki 39
Nanjing 39
Boardman 38
Bengaluru 14
Guangzhou 14
Norwalk 12
Roxbury 12
Dublin 11
Shenyang 11
Taipei 10
Nanchang 9
New York 9
Phoenix 9
Santa Clara 9
Hebei 7
Cagliari 6
Changsha 6
Milan 6
Munich 6
Washington 6
Central 5
Gangdong-gu 5
Hsinchu 5
Jacksonville 5
Redwood City 5
Dresden 4
Indiana 4
Jiaxing 4
London 4
Mestre 4
Portland 4
Rockville 4
Roermond 4
Shanghai 4
Suwon 4
Tainan City 4
Bolu 3
Chennai 3
Duncan 3
Elst 3
Gothenburg 3
Jinan 3
Kozhikode 3
Leuven 3
Lompoc 3
Los Angeles 3
Mestrino 3
New Bedfont 3
Ogden 3
Riese Pio X 3
Santa Barbara 3
Taoyuan District 3
Tianjin 3
Tokyo 3
Tsukuba 3
Valencia 3
Ventura 3
Angers 2
Bandung 2
Bhopal 2
Bologna 2
Borås 2
Chemnitz 2
Delhi 2
Ferrara 2
Fort Worth 2
Fremont 2
Gangbuk-gu 2
Grenoble 2
Gunzenhausen 2
Gävle 2
Hanam 2
Hangzhou 2
Heverlee 2
Jakarta 2
Kaohsiung City 2
Kharkiv 2
Lake Forest 2
Leawood 2
Magdeburg 2
Nürnberg 2
Parma 2
Ravenna 2
Rome 2
Totale 3.570
Nome #
Characterization of Charge Trapping Phenomena in GaN-based HEMTs 246
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 161
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 133
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 124
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 113
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 111
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 110
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 106
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 103
Proton induced trapping effect on space compatible GaN HEMTs 102
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 97
Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications 90
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 89
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 87
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 85
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 85
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 84
Field-dependent degradation mechanisms in GaN-based HEMTs 82
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 81
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors 79
Reliability and parasitic issues in GaN-based power HEMTs: A review 79
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 78
Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 77
Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements 75
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate 75
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 75
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 74
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 74
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices 74
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 71
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 70
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 70
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 69
Field plate related reliability improvements in GaN-on-Si HEMTs 68
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 66
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 63
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 62
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3dielectrics grown on GaN 62
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 59
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 59
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons 58
Breakdown investigation in GaN-based MIS-HEMT devices 58
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 56
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 54
Dielectric related issues in GaN based MIS HEMTs 53
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 52
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements 46
Novel high-voltage double-pulsed system for GaN-based power HEMTs 46
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 45
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 45
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 44
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 40
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 35
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 30
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 29
Ron Collapse, Breakdown and Degradation of d-mode MIS-HEMTs Based on GaN on Si Technology 29
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 28
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 26
Transient Performance, Breakdown And Degradation Of Power Transistors GaN On Si Technology 20
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon 20
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 10
Totale 4.392
Categoria #
all - tutte 16.563
article - articoli 7.933
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 330
Totale 24.826


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020654 0 0 0 0 107 77 83 100 106 97 64 20
2020/2021414 28 26 13 29 37 24 16 71 49 30 55 36
2021/2022692 19 132 72 35 31 20 47 75 30 24 58 149
2022/2023601 103 8 8 53 131 90 5 43 91 14 43 12
2023/2024344 36 43 31 33 24 36 35 11 19 14 23 39
2024/2025231 11 95 55 54 16 0 0 0 0 0 0 0
Totale 4.392