BISI, DAVIDE
 Distribuzione geografica
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Continente #
NA - Nord America 4.332
AS - Asia 1.894
EU - Europa 1.209
AF - Africa 381
SA - Sud America 305
OC - Oceania 46
Continente sconosciuto - Info sul continente non disponibili 16
Totale 8.183
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Nazione #
US - Stati Uniti d'America 4.113
SG - Singapore 682
CN - Cina 377
IT - Italia 230
HK - Hong Kong 191
BR - Brasile 175
DE - Germania 122
PL - Polonia 116
FI - Finlandia 107
VN - Vietnam 90
SE - Svezia 66
GB - Regno Unito 57
FR - Francia 55
RU - Federazione Russa 54
IN - India 49
TW - Taiwan 44
JP - Giappone 40
KR - Corea 40
UA - Ucraina 31
NL - Olanda 27
IE - Irlanda 26
CA - Canada 25
MX - Messico 25
AR - Argentina 24
ID - Indonesia 23
TR - Turchia 22
ES - Italia 20
ZA - Sudafrica 20
HN - Honduras 19
BE - Belgio 17
CY - Cipro 17
CZ - Repubblica Ceca 17
ME - Montenegro 17
AT - Austria 16
IL - Israele 16
IQ - Iraq 16
AE - Emirati Arabi Uniti 15
GF - Guiana Francese 15
KG - Kirghizistan 15
KH - Cambogia 15
LB - Libano 15
NP - Nepal 15
PT - Portogallo 15
VE - Venezuela 15
AL - Albania 14
AM - Armenia 14
BG - Bulgaria 14
BO - Bolivia 14
CI - Costa d'Avorio 14
JM - Giamaica 14
KZ - Kazakistan 14
LV - Lettonia 14
MA - Marocco 14
TN - Tunisia 14
BD - Bangladesh 13
CG - Congo 13
EC - Ecuador 13
EE - Estonia 13
EG - Egitto 13
JO - Giordania 13
KE - Kenya 13
LU - Lussemburgo 13
MG - Madagascar 13
MK - Macedonia 13
MR - Mauritania 13
TJ - Tagikistan 13
UZ - Uzbekistan 13
ZW - Zimbabwe 13
AU - Australia 12
CO - Colombia 12
NI - Nicaragua 12
NO - Norvegia 12
PA - Panama 12
SA - Arabia Saudita 12
BB - Barbados 11
BS - Bahamas 11
CV - Capo Verde 11
DJ - Gibuti 11
GH - Ghana 11
GP - Guadalupe 11
PK - Pakistan 11
AD - Andorra 10
AZ - Azerbaigian 10
BW - Botswana 10
CL - Cile 10
DK - Danimarca 10
DO - Repubblica Dominicana 10
DZ - Algeria 10
GE - Georgia 10
GN - Guinea 10
HR - Croazia 10
HU - Ungheria 10
NC - Nuova Caledonia 10
NZ - Nuova Zelanda 10
PY - Paraguay 10
RO - Romania 10
RS - Serbia 10
AO - Angola 9
BA - Bosnia-Erzegovina 9
CU - Cuba 9
Totale 7.764
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Città #
Fairfield 590
Woodbridge 492
Ashburn 408
Singapore 363
Houston 335
Ann Arbor 275
Seattle 220
Santa Clara 205
Chandler 198
Wilmington 194
Hong Kong 174
Cambridge 167
Beijing 114
Boardman 98
Bytom 97
Medford 60
Princeton 60
Des Moines 57
Padova 51
Helsinki 46
San Diego 44
Ho Chi Minh City 40
Nanjing 39
Los Angeles 34
New York 30
Dublin 21
São Paulo 19
Buffalo 17
Milan 17
Munich 17
Tokyo 17
Guangzhou 16
Podgorica 16
Bengaluru 15
Hanoi 15
Phnom Penh 14
Redondo Beach 14
Abidjan 13
Amman 13
Brooklyn 13
Dushanbe 13
Harare 13
Nouakchott 13
Antananarivo 12
Bishkek 12
Managua 12
Norwalk 12
Riga 12
Roxbury 12
Shenyang 12
Tashkent 12
Yerevan 12
Accra 11
London 11
Nassau 11
Panama City 11
Santa Barbara 11
Taipei 11
Andorra la Vella 10
Cayenne 10
Conakry 10
Nairobi 10
Phoenix 10
Tallinn 10
Bridgetown 9
Dakar 9
Denver 9
Djibouti 9
Hefei 9
Nanchang 9
Praia 9
Skopje 9
Sofia 9
Tel Aviv 9
Ulan Bator 9
Warsaw 9
Baku 8
Chennai 8
Council Bluffs 8
Havana 8
Hsinchu 8
Jakarta 8
Kigali 8
Kingston 8
Libreville 8
Luanda 8
Noumea 8
Nuremberg 8
San Pedro Sula 8
Sanaa 8
Taichung 8
Vienna 8
Willemstad 8
Almaty 7
Bamako 7
Brazzaville 7
Cairo 7
Chicago 7
Dili 7
Gothenburg 7
Totale 5.194
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Nome #
Characterization of Charge Trapping Phenomena in GaN-based HEMTs 421
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 238
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 205
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 185
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 185
Proton induced trapping effect on space compatible GaN HEMTs 177
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 176
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 171
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 168
Field-dependent degradation mechanisms in GaN-based HEMTs 163
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 162
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 161
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 159
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 158
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 152
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 150
Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications 146
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 144
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 144
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 143
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 143
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 139
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors 139
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 137
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 137
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 137
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 137
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices 137
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 136
Dielectric related issues in GaN based MIS HEMTs 136
Reliability and parasitic issues in GaN-based power HEMTs: A review 133
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 131
Breakdown investigation in GaN-based MIS-HEMT devices 129
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3dielectrics grown on GaN 127
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate 126
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 126
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 125
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 124
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 124
Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements 119
Field plate related reliability improvements in GaN-on-Si HEMTs 119
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons 117
Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 115
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 113
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 113
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 112
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 109
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 105
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 105
Novel high-voltage double-pulsed system for GaN-based power HEMTs 100
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 97
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 94
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements 89
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 88
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 87
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 86
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 76
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 74
Ron Collapse, Breakdown and Degradation of d-mode MIS-HEMTs Based on GaN on Si Technology 70
Transient Performance, Breakdown And Degradation Of Power Transistors GaN On Si Technology 62
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon 53
Totale 8.234
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Categoria #
all - tutte 25.999
article - articoli 11.924
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 470
Totale 38.393
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021281 0 0 0 0 0 24 16 71 49 30 55 36
2021/2022692 19 132 72 35 31 20 47 75 30 24 58 149
2022/2023601 103 8 8 53 131 90 5 43 91 14 43 12
2023/2024344 36 43 31 33 24 36 35 11 19 14 23 39
2024/20251.421 11 95 55 54 215 111 73 116 69 34 265 323
2025/20262.652 218 478 611 672 579 94 0 0 0 0 0 0
Totale 8.234